The properties of porous silicon samples prepared by adding hydrochloric acid to the usual hydrofluoric-acid electrolyte have been studied. These samples exhibit an intense photoluminescence that does not degrade over time and is unaffected by exposure to intense laser illumination. The peak photoluminescence from these layers of porous silicon occurs at photon energies of 1.85–1.9 eV. The photoluminescence signal from samples prepared in the standard way under the same initial conditions but without HCl in the composition of the electrolyte is two orders of magnitude less intense. Studies of the degradation of these porous silicon samples with time and exposure to various power levels of laser illumination revealed that the samples with the maximum content of HCl in the electrolyte composition emitted photoluminescence that was unaffected by laser illumination. In this work, the infrared spectra of the samples was measured in order to monitor the chemical state of their surfaces. It was found that the abrupt 100-fold increase in the intensity of the photoluminescence signal from samples made according to the method proposed here is associated both with distinctive features of the structure of porous silicon layers and with the presence of a thin crystalline layer of SiO2 on the surface of nanocrystallites.
Read full abstract