AbstractIn the realm of photonic integrated circuit design, on‐chip absorbers are imperative for preventing signal degradation caused by unintended stray photons, which induce signal crosstalk and operational errors. An ideal on‐chip optical absorber is expected to have a superior absorption capability across a wide range of frequencies while maintaining a minimal footprint. However, widely employed optical thin‐film absorbers suffer from limited absorption due to inherent refractive index mismatches and short light‐matter interaction lengths. Here a ≈45‐nm thin metalayer is demonstrated that exhibits uniformly high absorption over a broad wavelength range from 350 nm to 4.5 µm in a wide range of incident angles up to over 60 degrees. The metalayer's performance notably exceeds the absorption predicted by standard plane‐wave optics theories, potentially attributing to the Anderson localization effect. Integration of such a deep‐subwavelength metalayer absorber into photonic circuits will facilitate the creation of highly efficient photonic chips, propelling the advancement of optical communication and computing.
Read full abstract