Metal-insulator Transition Temperature Research Articles

The magnificent manifestation of Nd0.7Sr0.3MnO3 ceramics: A comprehensive exploration of different wet chemical routes via sol-gel and thermal treatment methods

The mixed-valence manganite has sparked immense interest owing to its intriguing colossal magnetoresistance (CMR) effect. However, a research gap exists in the current literature regarding Nd-based manganites with intermediate bandwidth. This paper addresses this gap by investigating Nd0.7Sr0.3MnO3 (NSMO) ceramics prepared through two different synthesis approaches: the newly developed thermal treatment method (TT) and the well-established sol-gel method (SG). The XRD analysis revealed a single high-purity NSMO phase with insignificant alteration in Mn-O bond length and Mn-O-Mn bond angle for both samples. Nevertheless, SG exhibited larger particle size (209.3 nm) and better crystallinity in comparison to TT (178.6 nm). These factors significantly affect the magnetic transition width while preserving the Curie temperature, TC ≈ 246 K. Regarding electrical behaviour, TT showed a robust suppression of the metal-insulator transition temperature, TMI from 224 K (SG) to 182 K. This difference can be attributed to the existence of magnetic disordered layer at the grain boundaries. Consequently, this resulted in an increased scattering process and elevated resistivity from 8 Ω (SG) to 22 Ω (TT). Various theoretical models were employed to elucidate the transport mechanism at different temperature ranges. Interestingly, both samples displayed distinct magneto-transport behaviour despite negligible differences in their structural parameters. The occurrence of magnetoresistance peak in SG suggests a pronounced intrinsic CMR effect, while its absence in TT implies a dominant influence of extrinsic CMR. These findings highlight that the physical properties of the manganite are not only governed by their intragrain properties (TC) but are also influenced by intergrain contributions (TMI) when various synthesis routes were utilised.

Investigation on characteristic of vanadium trioxide insulation mixed with metal powder for rare-earth barium copper oxide coils

This study examined the turn-to-turn contact resistance (R ct) between rare-earth barium copper oxide (REBCO) tapes and layers of vanadium trioxide (V2O3) and V2O3 mixed with metal powder mixture. V2O3 in single crystal structure was electrically characterised to exhibit resistivity with negative temperature dependence, allowing the turn-to-turn insulation to self-regulate the current bypass between REBCO tapes. To facilitate effective quench protection of V2O3-insulated REBCO magnets above the metal-insulator transition temperature (T rt), R ct must be further reduced to a level similar to those of non- and metal as insulated (NI and MI) REBCO magnets. Thus, we explored the mixing of conductive metal powders such as molybdenum (Mo) with V2O3 paste and investigated the transition properties of R ct. The resistance versus temperature characteristics, microscopic morphologies of the V2O3 layers, and thermal conductivity (k v) were appropriately assessed to determine the effects of mixing the metal powder with V2O3. The R ct of virgin V2O3 exhibited variations of 107–105 μΩ cm2 under 77–293 K. As the mixing concentration of the metal powder was increased, the reduction magnitude on R ct increased for > T rt (approximately 150 K). Furthermore, the transition slope became gentler for a wider temperature range of < T rt. For metal powder concentrations exceeding 50 wt%, R ct decreased by approximately 2 orders of magnitude (∼103 μΩ cm2) for > 150 K compared with that for virgin V2O3 paste. Moreover, compared to that of pure V2O3, k v demonstrated a remarkable increase of approximately 352% at 91 K for Mo powder mixed at a concentration of 60 wt%. The improved electrical and thermal properties of the V2O3 insulation layer owing to the mixing of metal powders can help REBCO magnets operate in an insulated state under normal conditions and effectively convert to a non-insulated state under quenching.

Variation of the metal-insulator phase transition temperature in VO2: An overview of some possible implementation methods

The great interest in VO2, which has stimulated a large number of studies and publications in recent decades, is caused by the reversible metal-insulator phase transition (MIT) that occurs at T = 68 °C and is accompanied by the transformation of a low-temperature dielectric (semiconductor) monoclinic phase into a high-temperature metallic phase with a rutile structure. Despite the ongoing discussion about the physical mechanism of this transition, the concomitant rapid change in the electrical and optical characteristics of the material by several orders of magnitude already finds numerous applications in optics, optoelectronics and sensors. At the same time, it became obvious that both the number and performance of the applications of VO2 would greatly increase, if it were possible to decrease the temperature of the phase transition without deterioration of other properties. This issue has become the subject of numerous studies. Mechanical stress and oxygen vacancies in the VO2 lattice, the concentration of free charge carriers, tuned by impurity doping or implantation, have been investigated and discussed as the main factors affecting the transition temperature. In this review, we intend to summarize and analyze the literature data on these ways, primarily those which are most efficient in influencing the transition temperature while maintaining a significant change in the modulation characteristics.

Effect of Zn2+ doping on the structure and metal–insulator transition of La2CuO4 ceramics

The structure and electrical properties of layered perovskites La2Cu1-xZnxO4 have been investigated. The resistivity of these samples has been measured in the temperature range of 90–300 K. The Zn2+doping induces a shift of the metal–insulator transition temperature towards the high-temperature region. The d9 electronic configuration of Cu2+ in La2CuO4 leads to an uneven distribution of electron clouds, inducing axial stretching of the surrounding oxygen octahedra and resulting in Jahn-Teller distortion. After Zn2+ doping, the charge compensation induces a partial transformation of Cu2+ to Cu+. As a result, the positions occupied by Cu2+ are replaced by Zn2+ and Cu+ with perfectly symmetric electron clouds in the 3d10 outer electronic configuration, thus suppressing the Jahn-Teller effect. This shifts the phonon scattering, which is responsible for the emergence of the metal’s conductive properties, to higher temperatures.

Optimized TCR and MR of La0.67Ca0.33-xSrxMnO3: Ag0.15 ceramics by Sr doping

Herein, in order to successfully create high-density La0.67Ca0.33-xSrxMnO3: Ag0.15 (LCSMO: Ag) ceramics (0 ≤ x ≤ 0.05), this research combines sol-gel and solid-phase processes. LCSMO: Ag ceramics electrical transport and magnetic properties were thoroughly investigated. XRD verified that the high-purity orthorhombic perovskite structure (space group Pnma) was produced. As Sr doping rises, the grain size grows, the single electron bandwidth increases, the metal-insulator transition temperature (TMI) continues to climb, and temperature coefficient of resistance (TCR) and magnetoresistance (MR) steadily drop. When x = 0.04, the TMI reaches 302.2 K. At this time, the TCR peak (TCRpeak) reaches 24.0 %·K−1 and the MRpeak reaches 49.2 %. These results demonstrate that Sr may effectively raise the TMI of LCMO: Ag ceramics to room temperature while maintaining high TCR and MR Values, which benefits the material's potential applications in devices such as uncooled infrared detectors.

Electrical resistivity and magnetoresistance of Sr3Fe2+xMo1–xO9–3x/2 (x = 0.45, 0.60, and 1.00) prepared by the solid-state reaction

In this paper, we focus on understanding the behavior of the temperature dependence of electrical resistivity (ρ) and magnetoresistance (MR) in Sr3Fe2+xMo1–xO9–3x/2 perovskites with x = 0.45, 0.60, and 1.00. Three polycrystalline materials were synthesized using conventional solid-state reaction techniques. Rietveld analysis of room-temperature X-ray diffraction data reveals that all three compositions crystallize in tetragonal symmetry; where x = 0.45 and 0.60 undergo an I4/mcm space group, while x = 1.00 adopts a P4/mmm space group. Electrical resistivity measurements carried out at magnetic fields (0 and 1 T) reveal the presence of a transition from the ferromagnetic phase to the paramagnetic phase in the vicinity of the TMI. The metal-insulator transition temperature (TMI) decreases with increasing Fe content and rises slightly with changing magnetic field from 0 to 1 T. The magnetoresistance (MR) of the SrFeO3–δ sample (x = 1.00) has a large value of about 63.6 %, indicating that it can be exploited for certain devices. A variety of theoretical models are used to study the behavior of electrical resistivity in various temperature ranges, showing excellent agreement with experimental results.

Nitrogen Doping in VO2 Thin Films on Synthetic Mica Substrates Through Mist Chemical Vapor Deposition: Lowering the Metal–Insulator Transition Temperature Toward Smart Windows

AbstractIn this study, nitrogen (N) is doped into VO2 thin films through mist chemical vapor deposition (CVD), and the effect of the doping on metal–insulator transition (MIT) temperatures is investigated. The N‐doped VO2 thin films are grown on an SnO2 buffer layer. The N‐doped VO2 lattice spacing tends to expand as the growth temperature decreased, which indicates that the incorporation of N into the lattice is derived from the Ethylenediamine. Secondary ion mass spectrometry (SIMS) is conducted to investigate the relationship between the decrease in the transition temperature and N concentration. The results reveal that the sample grown at 425 °C contains approximately 2 × 1020 cm−3 of N. Thus, efficient nitrogen doping can be achieved through mist CVD. The temperature‐resistance characteristics of VO2 thin films are measured to investigate their electrical properties and MIT temperatures. The results reveal that for undoped samples, the transition temperature slightly decreases with the decrease in the growth temperature. Furthermore, the sample grown at 425 °C exhibits a considerable change in resistance because of MIT at approximately 29.5 °C. These results prove the potential of using mist CVD N‐doped thin films for smart window applications to address future energy problems.

Tuning the metal-insulator transition temperature by the controlled generation of oxygen vacancies on La0.7Ca0.3MnO3-x epitaxial thin films

This report presents a study on the effect of the controlled generation of oxygen vacancies on the electronic transport properties of La0.7Ca0.3MnO3-x epitaxial thin films. Oxygen defects cause significant changes in the crystalline structure of mixed-valence manganites and lower the Mn valence, resulting in a shift of the metal-insulator transition to lower temperatures due to modifications in the angles and lengths of Mn-O bonds. Experiments using Polarized Extended X-Ray Absorption Fine Structure Spectroscopy have provided strong evidence that oxygen vacancies are mainly formed in the basal plane of the MnO6 octahedra. The accurate control of oxygen vacancies generation opens possibilities for managing and enhancing the magneto-electronic properties of epitaxial manganite thin films with potential in industrial applications.

Terahertz beam reconfigurable phase gradient metasurface of VO2 based on different metal–insulator transition temperatures

Terahertz beam reconfigurable phase gradient metasurface of VO2 based on different metal–insulator transition temperatures

Nanoelectrical monitoring the nonvolatile behavior of VO2 under multi-field stimulate by conductive atomic force microscopy

The ability to control the metal–insulator phase transition is crucial for future neuromorphic and memristive technologies. The key goal of this implementation is to understand and control the nanoscale mechanisms that support these two fundamental switching modalities (volatile and non-volatile states). Here, by adjusting the temperature (60 °C) close to the metal–insulator transition temperature, external application of low voltage (1 V) and laser excitation (18.6 mw · cm−2) can complete the metal–insulator transition of vanadium dioxide (VO2). The nonvolatile behavior of the VO2 devices was nanoelectrically monitored using conductive atomic force microscopy (C-AFM). Using this technique, we were able to reversibly transform the local switching response from volatile to nonvolatile, providing a unique approach for nanoelectrical monitoring in phase transition materials.

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This paper focuses on the architecture of crossbar arrays, where memristive devices are positioned at intersecting metal wires. We emphasize the unique resistive switching mechanisms of memristors and the challenges of sneak path currents and delve into the roles and configurations of selectors, particularly focusing on the one-selector one-resistor (1S1R) architecture with an insulator–metal transition (IMT) based selector. We use SPICE simulations based on defined models to examine a 3 × 3 1S1R ReRAM array with vanadium dioxide selectors and titanium dioxide film memristors, assessing the impact of ambient temperature and critical IMT temperatures on array performance. We highlight the operational regions of low resistive state (LRS) and high resistive state (HRS), providing insights into the electrical behavior of these components under various conditions. Lastly, we demonstrate the impact of selector presence on sneak path currents. This research contributes to the overall understanding of ReRAM crossbar arrays integrated with IMT material-based selectors.

Growth and phase transition properties of Ta-doped VO2 single crystal microtubes

Ta-doped VO2 single crystal microtubes with rectangular cross-sections were grown by a thermal oxidation process from V–Ta alloy foils in air. Characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy revealed their morphology as hollow, rod-like single crystals. Phase transition examinations used differential scanning calorimetry demonstrated that Ta doping can effectively decrease the metal-insulator transition temperatures of VO2 by approximately 9.8 °C/at. % Ta. The phase transition behavior and growth mechanism of Ta-doped VO2 single crystal microtubes are also elucidated.

Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO2 nanobeams.

The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.

Large temperature coefficient of resistivity (TCR) of La0.67Ca0.33MnO3 polycrystalline ceramics improved by optimizing sintering temperatures

This work investigates fabrication of La0.67Ca0.33MnO3 (LCMO) polycrystalline ceramics using a facile sol–gel method at sintering temperatures (Ts) ranging from 1470 °C to 1540 °C and explores relationship between their electrical transport properties and Ts. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, and X-ray photoemission spectroscopy were employed to characterize crystal structure, morphologies, element distributions, and Mn3+/Mn4+ ratio of the as-obtained LCMO ceramics. The influence of Ts on phase purity, microstructure, morphology, and electrical transport properties was also investigated. LCMO ceramics exhibit increased grain size and higher temperature coefficient of resistivity (TCR) at higher temperatures. An increase in Ts can reduce the strength of electron–lattice interactions and theoretical Curie temperature in LCMO ceramic samples, which can in turn optimize their electrical transport properties. Moreover, an increase in Ts enhances double-exchange (DE) effect to some extent. The DE effect further affects resistivity and metal–insulator transition temperature of material. Additionally, small-polaron hopping model and phenomenological percolation model were used to characterize electrical transport in metal–insulator transition region. The temperature at which TCR is maximum (265.78 K) and the largest TCR value (58.16 %) were achieved at a Ts of 1530 °C. By modulating the sintering temperature, we achieved LCMO ceramics with larger grains and enhanced electrical properties. This optimization renders materials suitable for highly sensitive infrared bolometer applications.

Exploring the Magnetism and Magnetocaloric Effect of W‐Doped VO2 Based on J1–J2 Ising Model

W‐doped VO2 exhibits a significant reduction in the metal–insulator transition temperature. In this study, the authors aim to investigate the magnetic influences of different proportions of W doping in VO2 with a rutile structure, using the J1–J2 model. The J1 and J2 values are calculated as 1.21 and −0.024 eV, respectively, using the generalized gradient approximation (GGA)+U method. Additionally, the J1–J2 model without W doping (x = 0) is simulated using the Ising model, and the obtained phase transition temperature of approximately 361 K closely matches the temperature calculated by Zheng et al. based on the spin dimer model. Furthermore, employing this model, the magnetization curves and magnetic entropy change (ΔS) are simulated for different W doping levels (x = 0–0.2). Through comprehensive analysis, it is found that the system exhibits the most promising research potential at a doping level of x = 0.12. These findings deepen the understanding of the mechanisms underlying the magnetic effects of W‐doped VO2 and provide a theoretical model guidance for future development of vanadium oxide materials.

A broadband reconfigurable frequency-selective surface in terahertz band based on different metal-insulator transition temperature of VO&lt;sub&gt;2&lt;/sub&gt;

A broadband reconfigurable frequency-selective surface in terahertz band based on different metal-insulator transition temperature of VO&lt;sub&gt;2&lt;/sub&gt;

Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit

Energy-based computing is a promising approach for addressing the rising demand for solving NP-hard problems across diverse domains, including logistics, artificial intelligence, cryptography, and optimization. Probabilistic computing utilizing pbits, which can be manufactured using the semiconductor process and seamlessly integrated with conventional processing units, stands out as an efficient candidate to meet these demands. Here, we propose a novel pbit unit using an NbOx volatile memristor-based oscillator capable of generating probabilistic bits in a self-clocking manner. The noise-induced metal-insulator transition causes the probabilistic behavior, which can be effectively modeled using a multi-noise-induced stochastic process around the metal-insulator transition temperature. We demonstrate a memristive Boltzmann machine based on our proposed pbit and validate its feasibility by solving NP-hard problems. Furthermore, we propose a streamlined operation methodology that considers the autocorrelation of individual bits, enabling energy-efficient and high-performance probabilistic computing.

Size-induced metal–insulator transition temperature decrease of VO2 nanoparticles obtained by laser irradiation in water

Vanadium dioxide (VO2) is a highly attractive and multifunctional material for technological applications due to its metal–insulator transition, which is accompanied by several orders of magnitude changes in electrical resistivity and optical transmissivity. In this work, we report on the metal–insulator transition of VO2 nanoparticles which are produced by a simple, efficient, and low-cost two-step preparation method based on infrared laser irradiation of V2O5 powder dispersed in water and subsequent stoichiometric stabilization by vacuum annealing at 773 K. VO2 nanoparticles have an average size of 36 nm with facet-like contours and undergo a structural phase transition from a monoclinic to a tetragonal phase, accompanied by a metal–insulator transition occurring around 323 K, which is about 17 K lower than bulk VO2. No evidence of the formation of intermediary metastable phases is observed. Our findings reveal that the size of VO2 nanoparticles is a key parameter to moving the transition closer to room temperature, which is important for many applications.

Temperature dependence of thermal transport properties in spinel Cu1-xAgxIr2S4

We investigated the thermal transport properties of Cu1-xAgxIr2S4 (0 ≤ x ≤ 0.05). The thermal conductivity of CuIr2S4 exhibits a sudden change at the metal-insulator transition (MIT) temperature, where the phonon thermal conductivity κph decreases sharply from the insulating phase (IP) to the metallic phase (MP). The decrease in κph is attributed to a decrease in the phonon mean free path l from the IP to the MP, which is caused by anomalous phonon scattering in the MP. The decrease in l at the MIT temperature becomes less pronounced with increasing x, and the absolute values of l in the MP for x = 0.025 and 0.05 are higher than that for x = 0. This behavior suggests that the anomalous phonon scattering is suppressed by Ag substitution. Compared with previously reported results for the effect of Zn substitutions at Cu sites, the phonon relaxation time exhibits a distinct behavior for Ag and Zn substitution.

Enhancing thermochromic properties of VO2 amorphous films on glass substrates by Sn-W co-doping

Co-doping is an effective method for VO2 films to meet the requirements of smart window applications. In this research, we prepared pure VO2, Sn-doped, and Sn-W co-doped amorphous films on glass substrates. Compared with pure and Sn-doped VO2 films, Sn-W co-doped samples showed better thermochromic properties. For the 4.8 % Sn-2.1 % W co-doped sample, the luminous transmittance (Tlum) reached 76 %, the metal-insulator transition (MIT) temperature (Tc) decreased to 46.7 °C, the solar transmittance modulation capacity (ΔTsol) was maintained at around 5.2 %, and the near-infrared modulation capacity (ΔTIR) was up to 13.5 %. These results show that co-doping Sn and W into VO2 is feasible for smart window applications.