Dielectric Layer Research Articles

Navigating Complex Process and Design Challenges in Hybrid Bonding for Advanced Semiconductor Integration: A Comprehensive Analysis

Abstract In advanced electronic systems, achieving top-tier interconnect interfaces with fine-pitch integration is of paramount importance. Among interconnect options, hybrid bonding is the preeminent choice given its exceptional capacity for accommodating a high input/output (I/O) count, which facilitates high-density memory integration, increased power delivery, and enhanced signal speed. One key technique for ensuring utmost quality in hybrid bonding involves embedding Cu interconnects within the dielectric layer. Equally pivotal is surface planarization, accomplished through chemical mechanical polishing (CMP), which encompasses a meticulous two-step procedure, commencing with copper bulk CMP and culminating in barrier CMP. The latter step is particularly critical, yielding the indispensable surface finish required for a successful hybrid bonding process. Several crucial surface properties significantly influence overall bond yield, including a copper recess (“dishing”) in the vias, erosion and roughness of the dielectric layer, and surface topography changes from high-density to low-density copper vias. To optimize these parameters, a comprehensive understanding of the interconnect layer's design is essential. Here, we delve into the ramifications of via scaling, ranging from 5 to 1 µm, on dishing and roll-off, and the effects of copper via density variation, spanning from 16% to 13%, on topography. Furthermore, we explore how incorporation of dummy vias impacts the final surface finish, potentially leading to improved bond yie

Functional Zwitterionic Polyurethanes as Gate Dielectrics for Organic Field‐Effect Transistors

AbstractThe development of polymeric dielectrics with a high dielectric constant is of great significance for flexible low‐voltage organic field‐effect transistors (OFETs). Herein, functional polyurethanes (PUs) with nitro and sulfobetaine zwitterionic groups are synthesized, and their electrical properties, mechanical properties, and the performances of OFET devices using these zwitterionic PUs as gate dielectrics are studied. Compared with sulfobetaine zwitterion‐containing PUs, nitro‐containing PUs (NO2‐PUs) show higher dielectric constant up to 6.5. Both zwitterionic PUs enhance the OFET performances, while the effect of NO2‐PU is more significant. Devices using NO2‐PU‐15 that contains 15 moL% nitro groups as the dielectric layer show the best performance and a threshold voltage (Vth) of as low as −0.02 V together with two orders’ increase of the mobility is observed, compared with the devices using PU without nitro groups. This study provides a new method to improve the dielectric constant of polymeric dielectrics, which is valuable for flexible/stretchable and wearable electronic devices.

Comparative Analysis of Two Different MIM Configurations of a Plasmonic Nanoantenna

AbstractTwo plasmonic nanoantenna configurations—nanodisk and nanostrip arrays—in a metal–insulator-metal (MIM) setup were proposed, optimized, and compared by simulating their optical properties in three-dimensional models using COMSOL Multiphysics software. The optical responses, including electric field enhancement, absorption, reflection, and transmission spectra, were systematically investigated. Optimized geometrical parameters led to a significant enhancement of the electric field within the gap layers and almost perfect light absorptance for both structures. The results showed that the enhancement of the electric field depends on the polarization of the incident light. For both polarizations, the periodic circular nanodisk array showed a stronger field enhancement with an electric field enhancement factor of 6.6 × 106 and TE polarization, and a larger absorptance of 98% at its dipole resonance wavelength, indicating the fundamental plasmonic mode. In addition, weaker resonant modes were observed in the absorptance and reflectance spectra of both nanostructures, with the nanostrips exhibiting sharper and stronger higher-order modes, making them suitable for applications requiring precise wavelength selectivity and narrow-band responses. Despite their different geometric shapes, both structures exhibited similar optimized metal film thickness and nanoparticle height, comparable modes in number and position, and identical optimized light incidence angles. Furthermore, increasing the dielectric gap layer thickness and optimizing it to a specific value revealed its ability to measure the refractive index, making it a promising candidate for sensing applications.

Increased Static Charge‐Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene‐Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

AbstractTop‐contact bottom‐gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4‐methylstyrene) (P4MS), or poly(4‐tert‐butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene (diF‐TES‐ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. The OFET characteristics of these devices are investigated and their threshold voltage shifts are measured after −70 V static charging for 5 min. Two‐terminal measurements are conducted using multiple different gate biases in the range of −50 to +50 V to investigate memristor behavior in the devices. OFETs containing DBTTF exhibited ΔVth increases as large as 330% relative to control OFETs containing no DBTTF, while OFETs containing at least 7.5 wt.% DBTTF exhibited memristor activity, with currents ranging from 20 nA to 44 µA depending on the applied bias. This work demonstrates that including small, separated crystallites in polymer dielectrics enhances their charge storage ability and can be promising for creating nonbinary memory devices for data processing. Additionally, the observed memristor activity indicates the OFETs in this work can be used in development of neuromorphic systems that aim to mimic the synaptic behavior of the human nervous system.

Improving the electromechanical deformability of MWCNT/silicone composites via encapsulating MWCNT with polyphenols and multilayered structure regulation

AbstractSilicone rubber (SR) is an ideal dielectric elastomer substrate due to its excellent flexibility and fast response speed. However, the innate low dielectric permittivity (ε) of SR generally requires a rather high driving voltage that restricts its widespread application. Typical attempts to increase ε of SR usually deteriorate either its flexibility or electrical stability. Herein, conductive multi‐walled carbon nanotube (MWCNT) were first surface modified with polyphenols (PNs) (MWCNT@PNs), aiming to facilitate its well dispersion within SR matrix, which may maintain the softness and electrical stability of SR via suppressing concentrated physical crosslinking and local leakage current flow. Then, five‐layered MWCNT@PNs/SR composites were prepared with the outer two insulating layers of SR while middle three dielectric layers of MWCNT@PNs filled SR. The multilayered structure further hindered the formation of conductive pathways through the composites, promising a high breakdown strength of the composites. Therefore, the multilayered MWCNT@PNs/SR composites exhibited increased ε, maintained low Young's modulus and electrical breakdown strength compared with pure SR of the same five‐layered structure. Among them, the composite with uniformly distributed MWCNT@PNs (m‐1: 1: 1) showed a highest actuation strain of 11.9% (at 19.6 kV mm−1), which was 4.1 times higher than that of SR (2.9% at 19.1 kV mm−1).

Ultra-Low Loading Fillers Induced Excellent Capacitive Performance in Polymer-Based Multilayer Nanocomposites under Harsh Environments.

Multilayer-structured nanocomposites are recognized as a prominent strategy for overcoming the paradox between the breakdown strength (Eb) and polarization (P) to achieve superior energy storage performance. However, current multilayer-structured nanocomposites involving substantial quantities of nanofillers (>10vol.%) for high dielectric constant as polarization layer will inevitably deteriorate mechanical properties and breakdown strength. Herein, an innovative approach is reported to breaking conventional rules by designing a multilayered polymer composite with ultralow loading of Al2O3 nanoparticles, i.e., 0.3vol.% for polarization layers and 2vol.% for insulation layers. By modulating the spatial distribution of Al2O3 nanoparticles in polymer, a significantly increased interfacial dipole response is induced, and deep interfacial traps are constructed to capture the mobile charges, thereby suppressing high-temperature conduction loss. The resulting multilayered polymer composite exhibits an unparalleled discharged energy density of 7.8 Jcm-3 with a charging/discharging efficiency exceeding 90% at 150°C. This work provides valuable insights into achieving superior capacitive performance in multilayer composite films operating under extreme conditions.

Azimuthally Modulating Surface Plasmon Polaritons

Abstract We suggest a scheme for the lossless excitation of surface plasmon polaritons (SPPs) at a metal-dielectric interface using a Laguerre Gaussian (LG) beam. We consider a three-layer structure consisting of a top transparent medium, a middle metal thin film, and a dielectric bottom layer. The dielectric medium contains three-level atoms exhibiting electromagnetically induced transparency (EIT). By applying a control field, a LG beam, and a microwave field, we induce azimuthally varying permittivity, which leads to the azimuthal modulation of SPPs. The propagation length of SPPs is increased when excited by a LG beam carrying optical angular momentum (OAM). Moreover, the group velocity of SPPs can be effectively controlled by adjusting the OAM and azimuthal angle of the LG beam, allowing for both slow and fast propagation of SPPs.

Combinatorial Optimization of Metal‐Insulator‐Insulator‐Metal (MIIM) Diodes With Thickness‐Gradient Films via Spatial Atomic Layer Deposition

AbstractMetal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure chemical vapor deposition is used to deposit ZnO and Al2O3 films with orthogonal gradient directions, producing 414 MIIM diodes with 414 different ZnO/Al2O3 film‐thickness combinations on a single substrate for combinatorial and high‐throughput optimization. The nm‐scale ZnO/Al2O3 films are printed in only 2 min and the entire device fabrication takes 7 h, which is much less than conventional approaches for investigating many insulator‐thickness combinations. Rapid identification of the optimal thickness combination is demonstrated; high‐performance diodes (asymmetry = 227, nonlinearity = 13.1, and responsivity = 12 A/W) are observed when a trap‐assisted tunneling mechanism is dominant for insulator thicknesses of 3.4–4.4 nm (ZnO) and 7.4 nm (Al2O3).

Time-dependent instrumental effects in IXPE: Pressure variation and GEM charging inside GPDs

We present the results of two studies conducted on long-term effects of a Gas Pixel Detector (GPD), central point of the X-ray detection of the Imaging X-ray Polarimetry Explorer (IXPE) mission: the pressure variation inside the sealed gas cells of the instrument and the charge build-up in the dielectric layer of the Gas Electron Multiplier (GEM), used as the amplification stage of the detector.

Enhanced Buried Interface Engineering for Efficient Inverted Perovskite Solar Cells Fabricated via Vapor-Solid Reaction.

Vapor-deposited inverted perovskite solar cells utilizing self-assembled monolayer (SAM) as hole transport material have gained significant attention for their high efficiencies and compatibility with silicon/perovskite monolithic tandem devices. However, as a small molecule, the SAM layer suffers low thermal tolerance in comparison with other metal oxide or polymers, rendering poor efficiency in solar device with high-temperature (> 160°C) fabricating procedures. In this study, a dual modification approach involving AlOx and F-doped phenyltrimethylammonium bromide (F-PTABr) layers is introduced to enhance the buried interface. The AlOx dielectric layer improves the interface contact and prevents the upward diffusion of SAM molecules during the vapor-solid reaction at 170°C, while the F-PTABr layer regulates crystal growth and reduces the interfacial defects. As a result, the AlOx/F-PTABr-treated perovskite film exhibits a homogeneous, pinhole-free morphology with improved crystal quality compared to the control films. This leads to a champion power conversion efficiency of 21.53% for the inverted perovskite solar cells. Moreover, the encapsulated devices maintained 90% of the initial efficiency after 600h of ageing at 85°C in air, demonstrating promising potential for silicon/perovskite tandem application.

An Ultrasensitive Programmable 2D Photoelectric Synaptic Transistor

AbstractThe burgeoning advancement of information technology has engendered a discernible surge in the examination of neuromorphic devices, notably drawing broader attention to artificial vision systems endowed with sensory recognition capabilities. Current photoelectric synapse devices employed in artificial vision systems are generally well‐suited for well‐illuminated conditions, yet exhibit diminished sensitivity in weak‐light scenarios, resulting in a pronounced deterioration of recognition accuracy. Here, an ultrasensitive photoelectric synaptic transistor based on negative quantum capacitance effect resulted from the 2D semi‐metallic graphene layer that partially enclosed within the gate dielectric layer, which manifests a noteworthy reduction in device control voltage and exhibits perception and storage capabilities for weak light of 39.4 nW cm−2 with detectivity above 1016 cm Hz1/2 W−1 is demonstrated. The voltage amplification effect and the concomitant formation of an equivalent local electrostatic field induced by the negative quantum capacitance effect engenders a robust programmable synaptic plasticity for extremely weak light by modifying the control gate. These results represent the inaugural integration of the negative quantum capacitance effect into optoelectronic devices and furnish a robust hardware foundation for developing vision systems in weak‐light environments.

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

The diketopyrrolopyrrole-based polymer (DPPT-TT) has been employed in organic power field effect transistors due to its exceptional off-state breakdown performance. The impact of organic semiconductor layer thickness on the breakdown performance has not been explored. In this study, we investigate the impact of DPPT-TT layer thickness on the breakdown voltage (BV) by fabricating organic field effect transistors (OFETs) with various DPPT-TT layer thicknesses. Our findings reveal that the devices' BV is a strong function of DPPT-TT layer thickness, and reducing the DPPT-TT layer thickness from 68 to 15 nm results in a decrease in BV from 291 to 86 V, attributed to the two-dimensional (2D) electric field crowding effect. An analytical model utilizing the 2D Poisson equation reveals an electric field at the DPPT-TT layer's surface. Thinner DPPT-TT layer exhibits larger electric field peak, leading to premature breakdown near the drain electrode. The relationship between breakdown electric field and DPPT-TT layer thickness was established by fitting the experimental data to the model, revealing an average BV error of only 8.8%. This phenomenon is validated to be ubiquitous in polymer based OFETs via DPPT-TT-based and P3HT-based devices. According to the proposed model, this 2D electric field crowding effect can be mitigated by adjusting the dielectric layer thickness (tD) and/or the dielectric material.

Bioinspired Flexible and Low-Voltage Organic Synaptic Transistors for UV Light-Driven Vision Systems.

Neuromorphic vision systems, particularly those stimulated by ultraviolet (UV) light, hold great potential applications in portable electronics, wearable technology, biological analysis, military surveillance, etc. Organic artificial synaptic devices hold immense potential in this field due to their ease of processing, flexibility, and biocompatibility. In this work, we have fabricated a flexible organic field-effect transistor (OFET) that utilizes chitosan-silver nanoparticles (AgNPs) composite material as the active dielectric material. During UV light illumination, both silver nanoparticles and the pentacene layer generate a large number of charge carriers. The photogenerated carriers lead to a more significant hole accumulation at the pentacene interface, resulting in a current rise. In the absence of light, the trapped electron in the silver nanoparticles persists for a longer duration, preventing the instant recombination with holes. This extended retention of electrons leads to the observed synaptic performance of the transistor. The use of aluminum oxide (Al2O3) as one of the dielectric layers enables the device to operate effectively at low voltage (<1 V). The device mimics various crucial synaptic properties of the brain, including short-term potentiation and long-term potentiation (STP and LTP), paired-pulse facilitation (PPF), spike-duration dependent plasticity (SDDP), spike-number dependent plasticity (SNDP), and spike-rate dependent plasticity (SRDP), etc. This work introduces an approach to develop flexible organic synaptic transistors that operate efficiently at low voltages, paving the way toward high-performance, UV light-driven neuromorphic vision systems.

Floating photovoltaic systems: photovoltaic cable submersion testing and potential impacts.

Floating photovoltaics (FPV) is an emerging technology that is gaining attention worldwide. However, little information is still available on its possible impacts in the aquatic ecosystems, as well as on the durability of its components. Therefore, this work intends to provide a contribution to this field, analysing possible obstacles that can compromise the performance of this technology, adding to an increase of its reliability and assessing possible impacts.The problem under study is related to the potential submersion of photovoltaic cables, that can lead to a degradation of its electrical insulation capabilities and, consequently, higher energy production losses and water contamination. In the present study, the submersion of photovoltaic cables (with two different insulation materials) in freshwater and artificial seawater was tested, in order to replicate real life conditions, when FPV systems are located in reservoirs or in the marine environment. Electrical insulation tests were carried out weekly to assess possible cable degradation, the physical-chemical characteristics of the water were also periodically monitored, complemented by analysis to detect traces of copper and microplastics in the water. The results showed that the submersion of photovoltaic cables with rubber sheath in saltwater can lead to a cable accelerated degradation, with reduction of its electrical insulation and, consequently, copper release into the aquatic environment. The test results pointed a probable relationship between submersion of cables with rubber outer shell and water freezing temperatures and the occurrence of accelerated degradation of the cable insulation layer. Reduced insulation resistance values were measured in this cable type after the occurrence of such temperatures, both in salt and freshwater, the cable presented visible exterior degradation signs. For this case copper residues were detected in the water.

Strategic implementation of variable-thickness insulation layers for stratospheric airships

Excessive heat transfer from photovoltaic systems to airship hulls poses a threat to flight safety. To address this issue, a theoretical model was developed that combines thermal, heat transfer, and optimization models for airships with variable-thickness insulation layers. The study investigates the daily thermal behavior of stratospheric airships, focusing on the effects of thermal conductivity and insulation thickness. To balance weight reduction with insulation effectiveness, temperature constraints were used, and insulation thickness was optimized across different sections of the airship using a simulated annealing algorithm (SAA). Results indicate that adjusting thermal conductivity and insulation thickness can mitigate overheating and overpressure, albeit with a reduced solar energy output. Notably, variable-thickness insulation achieved a 9.7 % weight reduction at 40°N latitude, enhancing both photovoltaic system design and insulation material selection for stratospheric airships.

Cooling effect and parameter analysis of applying heat insulation layer to tunnel regionalization in construction period based on geothermal level

The construction of high geothermal tunnels presents significant difficulties due to the abnormal rock temperature gradients, including designing a reasonable and cost-effective insulation layer as well as effective cooling measures. In this study, the rock temperature distribution, environmental temperature, and lining surface temperature of the tunnel during the construction period were analyzed through field surveys. A numerical simulation model considering ventilation and heat transfer dynamics was established based on the geothermal measurements and construction characteristics of this tunnel. After validating the 3D numerical model, the effects of installing heat insulation layers according to geothermal levels on the tunnel temperature field control were investigated. Additionally, the impacts of different insulation layer thermal conductivities (λi), ventilation air volume (Wa), and duct thermal conductivities (λd) were analyzed. The results indicate: (1) The comparison of temperature fields in tunnels with insulation layers, which is applied in the range of the rock temperature above 50 °C and without insulation layers was made. The temperature near the excavation face (TAm-1) decreases by up to 0.3% (0.5 °C), tunnel environment temperature with insulation layer applied (TAm-2) decreases by up to 4.2% (2.1 °C), the secondary lining temperature (TSec-lining) decreases by up to 10.5% (4.6 °C), and the wind temperature of air duct outlet (TAir-duct) decreases by up to 0.7% (0.5 °C). (2) The length of the insulation layer increases to the full length of the tunnel, TAm-1 continues to decline by only 0.4°C, TAm-2 by 0.5 °C, TSec-lining by 0.9 °C, and TAir-duct by 0.1 °C, which shows that it is the most economical and reasonable to apply the insulation layer only in the tunnel area where the rock temperature is higher than 50 °C. (3) As λi increases, both the tunnel environment and secondary lining temperatures exhibit linear increases, while increasing Wa and λi cause quadratic decreases and increases in tunnel temperature field parameters, respectively. (4) Range analysis of orthogonal experiments reveals that for tunnel temperature field impact level. For TAm-1, the significance order is Wa >λd >λi. And for TAm-2 and TSec-lining, the significance order is Wa >λi >λd, which can provide the more economical scheme for the insulation layer design and cooling schemes in the high ground temperature tunnel.

Insulating electromagnetic-shielding silicone compound enables direct potting electronics.

Traditional electromagnetic interference-shielding materials are predominantly electrically conductive, posing short-circuit risks when applied in highly integrated electronics. To overcome this dilemma, we propose a microcapacitor-structure model comprising conductive fillers as polar plates and intermediate polymer as a dielectric layer to develop insulating electromagnetic interference-shielding polymer composites. The electron oscillation in plates and dipole polarization in dielectric layers contribute to the reflection and absorption of electromagnetic waves. Guided by this, the synergistic nonpercolation densification and dielectric enhancement enable our composite to combine high resistivity, shielding performance, and thermal conductivity. Its insulating feature allows for direct potting into the crevices among assembled components to address electromagnetic compatibility and heat-accumulation issues.

Research progress of aerogel used in lithium-ion power batteries

In recent years, with the rapid development of clean energy vehicles (i.e., electric vehicles and hybrid electric vehicles) and electrochemical energy storage stations, safety accidents have significantly increased. However, the abuse conditions such as overheating, overcharging, mechanical abuse, short circuits, etc., can result in thermal runaway of lithium-ion batteries (LIBs). Severe thermal runaway can lead to battery fire and even explosion, thereby threatening the safety of personnel. The application of a few aerogels to the thermal insulation layer between the cells of the lithium-ion battery modules can strengthen the safety of batteries. Among many aerogels, oxide aerogels show excellent insulation and high-temperature resistance. Therefore, aerogels, especially oxide aerogels, have aroused widespread research interest. This paper introduces the mechanism of thermal runaway of LIBs and systematically reviews several important oxide aerogels and the derived composites, especially those based on SiO2, Al2O3, and ZrO2 aerogels. The mechanical strength and high-temperature resistance of those aerogels are discussed. The application of aerogel in LIBs is also investigated in detail, and the all-around effect is caused by the introduction of aerogel materials. In addition, the thermal protection safety strategy of aerogel thermal insulation layers is proposed. It is supposed that this review could enable readers to deepen their understanding of this field.

Experimentation of Heat-Insulating Materials for Surrounding Rocks in Deep Mines and Simulation Study of Temperature Reduction

With the increasing depletion of shallow resources, mining has gradually shifted to deeper levels, and the high-temperature problem of deep mining has restricted the efficient and safe development of mining. In this study, five types of thermal insulation materials for surrounding rocks with different ratios were produced using tailings, P.O.32.5 clinker, aluminum powder, glass beads, quick lime, and slaked lime as test materials. Based on the uniaxial compression test, the thermal constant analysis test, and numerical simulation analysis technology, the change rule of mortar compressive strength and thermal conductivity was analyzed, and the cooling effect of surrounding-rock thermal insulation materials with different ratios was discussed. The results showed that the compressive strength of the surrounding-rock thermal insulation materials ranged from 0.39 to 0.53 MPa, and the thermal conductivity ranged from 0.261 to 0.387 W/(K·m), with the compressive strength of ratio E being the largest and the thermal conductivity of ratio A being the lowest. In the numerical simulation analysis results, the thermal insulation layer thickness was taken as a value of 10 cm when, at this time, the best thermal insulation effect and economic benefits involved a temperature reduction of 0.9 K. In the case of changing the thermal conductivity and inlet wind speed, the original temperature of the rock temperature reduction was also very clear, with maximum reductions of 0.92 K, 0.92 K, and 1.42 K.

The Output Field of Curved Waveguides with a Cross-Section of Alternating Hollow and Dielectric Layers

The Output Field of Curved Waveguides with a Cross-Section of Alternating Hollow and Dielectric Layers