InP Nanowires Research Articles

N-acetylcysteine effects on extracellular polymeric substances of Xylella fastidiosa: A spatiotemporal investigation with implications for biofilm disruption

BackgroundThe matrix of extracellular polymeric substances (EPS) present in biofilms greatly amplifies the problem of bacterial infections, protecting bacteria against antimicrobial treatments and eventually leading to bacterial resistance. The need for alternative treatments that destroy the EPS matrix becomes evident. N-acetylcysteine (NAC) is one option that presents diverse effects against bacteria; however, the different mechanisms of action of NAC in biofilms have yet to be elucidated. ObjectivesIn this work, we performed microscopy studies at micro and nano scales to address the effects of NAC at single cell level and early-stage biofilms of the Xylella fastidiosa phytopathogen. MethodsWe show the physical effects of NAC on the adhesion surface and the different types of EPS, as well as the mechanical response of individual bacteria to NAC concentrations between 2 and 20 mg/mL. ResultsNAC modified the conditioning film on the substrate, broke down the soluble EPS, resulting in the release of adherent bacteria, decreased the volume of loosely bound EPS, and disrupted the biofilm matrix. Tightly bound EPS suffered structural alterations despite no solid evidence of its removal. In addition, bacterial force measurements upon NAC action performed with InP nanowire arrays showed an enhanced momentum transfer to the nanowires due to increased cell mobility resulting from EPS removal. ConclusionsOur results clearly show that conditioning film and soluble EPS play a key role in cell adhesion control and that NAC alters EPS structure, providing solid evidence that NAC actuates mainly on EPS removal, both at single cell and biofilm levels.

InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure.

Crystal phase transitions can form a new type of heterojunction with different atomic arrangements in the same material: crystal phase heterojunction (CPHJ). The CPHJ has an inherently strong impact on band engineering without concerns over critical thicknesses with misfit dislocations and a semiconductor-metal transition. In-plane CPHJ was recently demonstrated in two-dimensional (2D) transition-metal dichalcogenide (TMD) materials and utilized for conventional planar field-effect transistor applications. However, scalability such as gate electrostatic control, miniaturization, and multigate structure have been limited because of the geometrical issue. Here, we demonstrated a transistor using the CPHJ with a vertical gate-all-around structure by forming a CPHJ in conventional III-V semiconductors. The CPHJ, composed of wurtzite InP nanowires with zincblende InP substrates, showed an atomically flat heterojunction without dislocations and indicated a Type-II band discontinuity across the junction. The CPHJ transistor had moderate to good gate electrostatic controllability with high on-state currents and transconductance. The CPHJ offer will provide a new switching mechanism and add a new junction and device design choice to the long history of transistors.

Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity

Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity

Zincblende InAsxP1-x/InP Quantum Dot Nanowires for Telecom Wavelength Emission.

InAsxP1-x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAsxP1-x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAsxP1-x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAsxP1-x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAsxP1-x QDs with a composition in the range of x = 0.24-1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAsxP1-x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts

Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-band k·p simulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs.

Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

We carried out in situ annealing of InP nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, the InP NWs had a hexagonal cross-section with {112¯} facets vertical to the substrates; they became tapered, and the edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20 nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of the NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e. achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures.

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays.

High-quality quantum light sources are crucial components for the implementation of practical and reliable quantum technologies. The persistent challenge, however, is the lack of scalable and deterministic single photon sources that can be synthesized reproducibly. Here, we present a combination of droplet epitaxy with selective area epitaxy to realize the deterministic growth of single quantum dots in nanowire arrays. By optimization of the single quantum dot growth and the nanowire cavity design, single emissions are effectively coupled with the dominant mode of the nanowires to realize Purcell enhancement. The resonance-enhanced quantum emitter system boasts a brightness of millions of counts per second with nanowatt excitation power, a short radiation lifetime of 350 ± 5 ps, and a high single-photon purity with g(2)(0) value of 0.05 with continuous wave above-band excitation. Finite-difference time-domain (FDTD) simulation results show that the emissions of single quantum dots are coupled into the TM01 mode of the nanowires, giving a Purcell factor ≈ 3. Our technology can be used for creating on-chip scalable single photon sources for future quantum technology applications including quantum networks, quantum computation, and quantum imaging.

High precision orientation mapping from 4D-STEM precession electron diffraction data through quantitative analysis of diffracted intensities

The association of scanning transmission electron microscopy (STEM) and detection of a diffraction pattern at each probe position (so-called 4D-STEM) represents one of the most promising approaches to analyze structural properties of materials with nanometric resolution and low irradiation levels. This is widely used for texture analysis of materials using automated crystal orientation mapping (ACOM). Herein, we perform orientation mapping in InP nanowires exploiting precession electron diffraction (PED) patterns acquired by an axial CMOS camera. Crystal orientation is determined at each probe position by the quantitative analysis of diffracted intensities minimizing a residue comparing experiments and simulations in analogy to x-ray structural refinement. Our simulations are based on the two-beam dynamical diffraction approximation and yield a high angular precision (∼0.03°), much lower than the traditional ACOM based on pattern matching algorithms (∼1°). We anticipate that simultaneous exploration of both spot positions and high precision crystal misorientation will allow the exploration of the whole potentiality provided by PED-based 4D-STEM for the characterization of deformation fields in nanomaterials.

Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

Optimization of the efficiency of a nanowire solar cell by nanowire tapering

Thermodynamics shows that the open-circuit voltage (Voc) of a solar cell is dependent on the external radiative efficiency at Voc. In planar solar cells with low photon recycling probability, this efficiency is limited to 2% due to total internal reflection of the emitted light, providing a penalty of 101 mV to the Voc. Tapered nanowire solar cells allow for an adiabatic expansion of the guided optical mode into air, allowing to reduce this loss. For this purpose, we first perform simulations of the photon escape probability in tapered nanowires with both finite difference time domain simulations as well as with rigorous coupled-wave analysis, showing photon escape probabilities up to 47.2% for normally tapered nanowires and up to 92% for inversely tapered nanowires. We subsequently show that by fine tuning the recipe for reactive ion etching of the tapered InP nanowires, we can decrease the nanowire tapering angle from 4.5° down to 1.8°, allowing to significantly increase the measured external radiative efficiency. We finally observe an open-circuit voltage of 0.746 V at a tapering angle of 2.46°.

Efficiency enhancement in a lensed nanowire solar cell

We investigate microlenses that selectively focus the light on only a small fraction of all nanowires within an arrayed InP nanowire solar cell. The nano-concentration improves both the short-circuit current (Jsc) and the open-circuit voltage (Voc) of the solar cell. For this purpose, polymethyl methacrylate microlenses with 6 μm diameter were randomly positioned on top of an arrayed nanowire solar cell with 500 nm pitch. The microlenses were fabricated by first patterning cylindrical micropillars, which were subsequently shaped as lenses by using a thermal reflow process. The quality of the microlenses was experimentally assessed by Fourier microscopy showing strong collimation of the emitted photoluminescence. By analyzing the slope of the integrated photoluminescence vs excitation density, we deduce a substantial enhancement of the external radiative efficiency of a nanowire array by adding microlenses. The enhanced radiative efficiency of the lensed nanowire array results in a clear enhancement of the open-circuit voltage for a subset of our solar cells. The microlenses finally also allow to increase the short-circuit current of our relatively short nanowires, providing a route to significantly reduce the amount of expensive semiconductor material.

Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips wafer

Electrical Activity and Extremes of Individual Suspended ZnO Nanowires for 3D Nanoelectronic Applications.

We explored the electrical activity and extremes inside individual suspended zinc oxide (ZnO) nanowires (NWs) (diameter: 50-550 nm, length: 5-50 μm) subjected to high forward bias-induced Joule heating using two-terminal current-voltage measurements. NWs were isolated using a reproducible nanometrology technique, employing a nanomanipulator inside a scanning electron microscope. Schottky behavior is observed between installed tips and ZnO NW. The suspended ZnO NWs exhibited an average electrical resistivity ρ (approximately 2.3 × 10-2 Ω cm) and a high electron density n (exceeding 1.89 × 1018 cm-3), comparable to that of InP NWs, GaN NWs, and InAs NWs (1018∼1019 cm-3), suggesting the potential to drive advancements in high-performance NW devices. A maximum breakdown current density (JBD) of ∼0.14 MA/cm2 and a maximum breakdown power density (PBD) of 6.93 mW/μm3 were obtained, both of which are higher than substrate-bound ZnO NWs and consistent with previously reported results obtained from probed ZnO NWs grown vertically on the substrate. Moreover, we discovered that NWs experienced thermal breakdown due to Joule heating and exploited this breakdown mechanism to further investigate the temperature distribution along the ZnO NWs, as well as its dependence on the electrical properties and thermal conductance of contact electrodes. Thermal conductance was determined to be ∼0.4 nW K-1 and ∼1.66 pW K-1 at the tungsten(W)-ZnO NW and platinum(Pt)-ZnO NW contacts, respectively. In addition, we measured the elastic modulus (130-171 GPa), which closely approximated bulk values. We also estimated the nanoindentation hardness to be between 5 and 10 GPa. This work provides valuable insights into the electrical activity and extreme mechanisms, thus providing a better understanding of the potentials and limitations associated with utilizing suspended NWs in 3D nanodevices.

Nano-structuring metal organic frameworks on semiconductor nanowire arrays for highly sensitive and selective chemical sensing

Chemiresistive sensing of gas molecules has been widely investigated for application in medical diagnostics and environmental monitoring, showing high sensitivity and low limits of detection toward various volatile organic compounds. While metal oxide semiconductors offer numerous advantages, such as ease of fabrication, high sensitivity, and fast response times, they often suffer of high insufficient selectivity. Here, we report the engineering of a low-temperature sensing platform consisting of nanostructured zeolitic imidazolate framework (ZIF-8) metal organic frameworks (MOFs) over InP semiconducting nanowire (NW) arrays. These devices were fabricated via top-down etching of InP NW arrays, aerosol deposition of flame-made ZnO nanoparticles, and their chemical vapor conversion to ZIF-8. The presence of ZIF-8 significantly enhances the device sensitivity over that of the pristine InP NW arrays by providing a high density of adsorption sites and faster reduction kinetics. Our optimal sensors can detect NO2 in a large concentration range from 0.1 to 8 ppm, in addition to showing relatively higher responses toward various gas molecules, including CO2, methanol, ethanol, acetone, and propane, in comparison with pristine InP NW sensors. Given the large family of MOFs with controllable pore size and chemical composition, our findings provide a flexible approach for engineering the selectivity of highly sensitive and miniaturized gas sensors for integration in miniaturized devices.

Versatile self-catalyzed growth of freestanding zinc blende/wurtzite InP nanowires on an aerographite substrate for single-nanowire light detection

Versatile self-catalyzed growth of freestanding zinc blende/wurtzite InP nanowires on an aerographite substrate for single-nanowire light detection

Processing and characterization of large area InP nanowire photovoltaic devices

III−V nanowire (NW) photovoltaic devices promise high efficiencies at reduced materials usage. However, research has so far focused on small devices, mostly ≤1 mm2. In this study, the upscaling potential of axial junction InP NW photovoltaic devices is investigated. Device processing was carried out on a full 2″ wafer, with device sizes up to 1 cm2, which is a significant increase from the mm-scale III−V NW photovoltaic devices published previously. The short-circuit current density of the largest 1 cm2 devices, in which 460 million NWs are contacted in parallel, is on par with smaller devices. This enables a record power generation of 6.0 mW under AM1.5 G illumination, more than one order of magnitude higher than previous III−V NW photovoltaic devices. On the other hand, the fill factor of the larger devices is lower in comparison with smaller devices, which affects the device efficiency. By use of electroluminescence mapping, resistive losses in the indium tin oxide (ITO) front contact are found to limit the fill factor of the large devices. We use combined light-beam induced current (LBIC) and photoluminescence (PL) mapping as a powerful characterization tool for NW photovoltaic devices. From the LBIC and PL maps, local defects can be identified on the fully processed devices.

Polarization Conversion of Light Diffracted from InP Nanowire Photonic Crystal Arrays

AbstractThis work investigates the polarization state of light diffracted from uncoated and gold‐coated InP nanowire photonic crystal arrays grown by selective area epitaxy. Experimental data and finite‐difference time‐domain simulations show that both the intensity and the ellipticity of the polarization state of the diffracted light beam can be controlled by the nanowire dimensions and gold coating, while the diffracted angle remains unchanged with respect to variations of these parameters. A nominally 10 nm‐thick gold film deposited around the nanowires enhances the diffraction intensity by plasmonic effects. These results demonstrate that the controlled conversion of incident linearly polarized light to circularly polarized or rotated linearly polarized diffracted light can find applications in photonic integrated circuits. The high sensitivity of the polarization state with respect to alterations of the nanowire dimension opens new prospects in the areas of semiconductor metrology and microchip inspection as well as for submicron particle detection.

A Self-Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature.

The fast development of the Internet of Things (IoT) has driven an increasing consumer demand for self-powered gas sensors for real-time data collection and autonomous responses in industries such as environmental monitoring, workplace safety, smart cities, and personal healthcare. Despite intensive research and rapid progress in the field, most reported self-powered devices, specifically NO2 sensors for air pollution monitoring, have limited sensitivity, selectivity, and scalability. Here, a novel photovoltaic self-powered NO2 sensor is demonstrated based on axial p-i-n homojunction InP nanowire (NW) arrays, that overcome these limitations. The optimized innovative InP NW array device is designed by numerical simulation for insights into sensing mechanisms and performance enhancement. Without a power source, this InP NW sensor achieves an 84% sensing response to 1ppm NO2 and records a limit of detection down to the sub-ppb level, with little dependence on the incident light intensity, even under <5% of 1 sun illumination. Based on this great environmental fidelity, the sensor is integrated into a commercial microchip interface to evaluate its performance in the context of dynamic environmental monitoring of motor vehicle exhaust. The results show that compound semiconductor nanowires can form promising self-powered sensing platforms suitable for future mega-scale IoT systems.

Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition

We characterized the current injection and electroluminescence (EL) properties of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with axial junctions. The EL spectra of two samples with the same LED junction structure exhibited two different behaviors. One showed a single EL peak originating from the zinc-blende (ZB)-InP bandgap. The other showed two EL peaks originating from the ZB and WZ phases. This difference in EL behavior is attributed to the difference in the contact position and to depletion layer spreading. Clarification of the origin of the different EL peaks is important for optimizing the NW-LED structure.