InP-based Lasers Research Articles

Scalable transfer printing approach to heterogeneous integration of InP lasers on silicon-on-insulator waveguide platform

InP-based edge-emitting O-band lasers are integrated onto silicon photonics circuit employing micro-transfer printing technology. Blocks of unpatterned InP gain material of typical size 1000 × 60 μ m2 are first transferred onto 400 nm thick silicon rib waveguides with the fabrication steps performed on the target wafer to realize the final lasers. As a result, the InP ridge waveguides are aligned with lithographic accuracy to the underlying Si waveguides resulting in an approach free from any misalignment stemming from the transfer printing process. The fabricated Distributed Bragg Reflector laser shows lasing around 100 mA current injection with minimum 1 mW of output power coupled to a single mode fiber. This integration method paves a reliable route toward scaling-up the integration of active devices such as lasers, modulators, and detectors on 300-mm diameter silicon wafers, which requires high-uniformity across the wafer.

High-power, stable single-mode CW operation of 1550 nm wavelength InP-based photonic-crystal surface-emitting lasers

1550 nm wavelength photonic-crystal surface-emitting lasers (PCSELs) are attractive for optical communication and eye-safe sensing applications. In this study, we present InP-based PCSELs featuring a double-lattice photonic-crystal structure designed for high-power single-mode operation at a wavelength of 1550 nm. These PCSELs demonstrate output powers exceeding 300 mW under continuous-wave conditions at 25 °C. Additionally, highly stable single-mode oscillation with a side-mode suppression ratio of over 60 dB is verified at temperatures from 15 °C to 60 °C. Measurement and simulation of photonic band structures reveal the impacts of the threshold gain margin and optical coupling coefficient on the single-mode stability.

High-power and high-efficiency operation of 1.3 µm-wavelength InP-based photonic-crystal surface-emitting lasers with metal reflector.

We demonstrate high-output-power and high-efficiency operation of 1.3-µm-wavelength InP-based photonic-crystal surface-emitting lasers (PCSELs). By introducing a metal reflector and adjusting the phase of the reflected light via optimization of the thickness of the p-InP cladding layer, we successfully achieve an output power of approximately 400 mW with the slope efficiency of 0.4 W/A and the wall-plug efficiency of 20% under CW conditions. In addition, this PCSEL exhibits a narrow circular beam with a divergence angle below 1.6° even at high output powers under CW conditions at temperatures from 15°C to 50°C. We have also demonstrated an output power of over 12 W under pulsed conditions at room temperature.

Heterogeneous integration of III–V semiconductor lasers on thin-film lithium niobite platform by wafer bonding

Thin-film lithium niobate (TFLN) photonic integrated circuits (PICs) have emerged as a promising integrated photonics platform for the optical communication, microwave photonics, and sensing applications. In recent years, rapid progress has been made on the development of low-loss TFLN waveguides, high-speed modulators, and various passive components. However, the integration of laser sources on the TFLN photonics platform is still one of the main hurdles in the path toward fully integrated TFLN PICs. Here, we present the heterogeneous integration of InP-based semiconductor lasers on a TFLN PIC. The III–V epitaxial layer stack is adhesively bonded to a TFLN waveguide circuit. In the laser device, the light is coupled from the III–V gain section to the TFLN waveguide via a multi-section spot size converter. A waveguide-coupled output power above 1 mW is achieved for the device operating at room temperature. This heterogeneous integration approach can also be used to realize on-chip photodetectors based on the same epitaxial layer stack and the same process flow, thereby enabling large-volume, low-cost manufacturing of fully integrated III–V-on-lithium niobate systems for next-generation high-capacity communication applications.

Room-temperature continuous-wave InP-based 2.01 µm microcavity lasers in whispering-gallery modes with InGaAsSb quantum well

We demonstrated an electrically pumped InP-based microcavity laser operating in continuous-wave mode. The active region is designed with antimony surfactants to enhance the gain at 2 μm, and a selective electrical isolation scheme is used to secure continuous-wave operation for the microcavity laser at room temperature. The lasers were fabricated as a notched elliptical resonator, resulting in a highly unidirectional far-field profile with an in-plane beam divergence of less than 2°. Single-mode emission was obtained over the entire dynamic range, and the laser frequencies were tuned linearly with the pumping current. Overall, these directional lasers pave the way for portable and highly integrated on-chip sensing applications.

High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

We report on the realization of an InP-based long wavelength quantum cascade laser grown on top of a silicon substrate. This demonstration first required the development of an epitaxial template with a smooth surface, which combines two methods of dislocation filtering. Once wafer growth was complete, a lateral injection buried heterostructure laser geometry was employed for efficient current injection and low loss. The laser emits at a wavelength of ~ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10.8~\mu \text{m}$ </tex-math></inline-formula> and is capable of operation above 373 K, with a high peak power (>4 W) at room temperature. Laser threshold behavior with temperature is characterized by a T0 of 178 K. The far field beam shape is single lobed, showing fundamental transverse mode operation.

∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition

Room-temperature, pulsed-operation lasing of 8.5 μm-emitting InP-based quantum cascade lasers (QCLs), with low threshold-current density and watt-level output power, is demonstrated from structures grown on (001) GaAs substrates by metal-organic chemical vapor deposition. Prior to growing the laser structure, which contains a 35-stage In0.53Ga0.47As/In0.52Al0.48As lattice-matched active-core region, a ∼2 μm-thick nearly fully relaxed InP buffer with strained 1.6 nm-thick InAs quantum-dot-like dislocation-filter layers was grown. A smooth terminal buffer-layer surface, with roughness as low as 0.4 nm on a 10 × 10 μm2 scale, was obtained, while the estimated threading-dislocation density was in the mid-range × 108 cm−2. A series of measurements, on lasers grown on InP metamorphic buffer layers (MBLs) and on native InP substrates, were performed for understanding the impact of the buffer-layer's surface roughness, residual strain, and threading-dislocation density on unipolar devices such as QCLs. As-cleaved devices, grown on InP MBLs, were fabricated as 25 μm × 3 mm deep-etched ridge guides with lateral current injection. The results are pulsed maximum output power of 1.95 W/facet and a low threshold-current density of 1.86 kA/cm2 at 293 K. These values are comparable to those obtained from devices grown on InP: 2.09 W/facet and 2.42 kA/cm2. This demonstrates the relative insensitivity of the device-performance metrics on high residual threading-dislocation density, and high-performance InP-based QCLs emitting near 8 μm can be achieved on lattice-mismatched substrates.

High-performance quantum cascade lasers at λ ∼ 9 µm grown by MOCVD.

We demonstrate a high power InP-based quantum cascade laser (QCL) (λ ∼ 9 µm) with high characteristic temperature grown by metalorganic chemical vapor deposition (MOCVD) in this article. A 4-mm-long cavity length, 10.5-µm-wide ridge QCL with high-reflection (HR) coating demonstrates a maximum pulsed peak power of 1.55 W and continuous-wave (CW) output power of 1.02W at 293 K. The pulsed threshold current density of the device is as low as 1.52 kA/cm2. The active region adopted a dual-upper-state (DAU) and multiple-lower-state (MS) design and it shows a wide electroluminescence (EL) spectrum with 466 cm-1 wide full-width at half maximum (FWHM). In addition, the device performance is insensitive to the temperature change since the threshold-current characteristic temperature coefficient, T0, is as high as 228 K, and slope-efficiency characteristic temperature coefficient, T1, is as high as 680 K, over the heatsink-temperature range of 293 K to 353 K.

High Power Mid-Infrared Quantum Cascade Lasers Grown on Si

This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 μm, and the device operates in the fundamental transverse mode.

High-power CW oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers.

We demonstrate high-power continuous-wave (CW) lasing oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers (PCSELs). Single-mode operation with an output power of over 100 mW, a side-mode suppression ratio (SMSR) of over 50 dB, and a narrow single-lobe beam with a divergence angle of below 1.2° are successfully achieved by using a double-lattice photonic crystal structure consisting of high-aspect-ratio deep air holes. The double lattice is designed to enhance both the in-plane optical feedback and the surface radiation effects in the photonic crystal. The coupling coefficients for 180 ∘, +90 ∘, and -90 ∘ diffractions are estimated from the measurements of the photonic band structure as κ1D = 417 cm-1, κ2D+ = 135 cm-1, and κ2D- = 65 cm-1, respectively. The stable single-mode, high-beam-quality operation is attributed to these large coupling coefficients introduced by the asymmetric double-lattice structure.

Self-Forced Oscillation in Heterogeneously Integrated Multi-Mode Laser

High-stability optoelectronic oscillators (OEOs) are attained using self-forced oscillation techniques using long optical delays. Free-running InP-based multi-mode laser (MML) diodes with free-spectral range (FSR) of 11.7 GHz is stabilized using self-electrical injection-locked (SEIL) and dual self-phase-locked loop (DSPLL) (SEILDPLL) approach; phase noise of the free-running OEO of −52.8 dBc/Hz at 10-kHz offset was improved by 36 dB experimentally. Self-forced stabilization of MML-based OEO results in timing jitter of 0.9 ps, a factor of 33 times reduction in the free-running performance. A fully integrated solution using Si-photonics (SiP) is more environmentally stable and amenable to a reduced large volume manufacturing. A heterogeneously integrated MML combined with self-forced function is designed on an approximately 91-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> SiP chip using 325- and 975-ns time delays.

High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs

The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices on low-cost photonic platforms, such as Si. As evidence, an InP-based mid-infrared quantum cascade laser structure was grown on a GaAs substrate, which has a large (4%) lattice mismatch with respect to InP. Prior to laser core growth, a metamorphic buffer layer of InP was grown directly on a GaAs substrate to adjust the lattice constant. Wafer characterization data are given to establish general material characteristics. A simple fabrication procedure leads to lasers with high peak power (&gt;14 W) at room temperature. These results are extremely promising for direct quantum cascade laser growth on Si substrates.

Synchronization of Electro-Optically Modulated Kerr Soliton to a Chip-Scale Mode-Locked Laser PIC via Regenerative Harmonic Injection Locking

An InP-based mode-locked laser photonic integrated circuit with a repetition rate of 10 GHz is optically synchronized to a SiN microresonator-based dissipative Kerr soliton with a repetition rate of 305 GHz. The synchronization is achieved through regenerative harmonic injection locking assisted with electro-optic division which results in an optical frequency division factor of 18. The repetition rate of the dissipative Kerr soliton is stabilized through electro-optic division and transferred to the mode-locked laser, where we measure a fractional frequency instability in the repetition rate of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$10^{-10}$</tex-math></inline-formula> at 1 s with a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$1/\tau$</tex-math></inline-formula> trend. Furthermore, we also stabilize the repetition rate of the dissipative Kerr soliton using the mode-locked laser’s repetition rate beat as a feedback point.

Gain-switching of 1.55 µm InP-based Qdash lasers grown on Si

Reliable lasers on Si with large bandwidth are desirable for high-performance data communication systems on Si-photonics platforms. Here, we report short optical pulses generated by gain-switched InP-based 1.55 µm quantum dash (Qdash) lasers directly grown on (001) Si. The laser performance and related physical parameters were investigated by carrying out a gain-switching test for lasers on both Si and native InP substrates. The shortest pulses obtained were 217 and 252 ps for the lasers on InP and Si, respectively. By varying the electrical bias and pulse duration systematically, the evolution of the generated optical pulse duration and peak power was studied. The impact of cavity size on the optical pulse was also examined. Parameters were extracted using established equations fitted with our measurement results to gain insight into the underlying physics and correlation with the observed behavior. The obtained results indicate that the pulse width is limited by the low differential gain and strong gain compression of the active material. Our results indicate that Qdash lasers on Si can demonstrate comparable performance to those on a native InP substrate and manifest its potential application in an Si-based photonics chip for optical on-chip communications.

Towards Interband Cascade lasers on InP Substrate

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, “W”-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view. The calculated band structure within the 8-band k·p approximation showed that the inclusion of a thin InAs layer into such a type II system brings a useful additional tuning knob to tailor the electronic confined states, optical transitions’ energy and their intensity. Eventually, it allows achieving the emission wavelengths from below 3 to at least 4.6 μm, while still keeping reasonably high gain when compared to the state-of-the-art ICLs. We demonstrate a good tunability of both the emission wavelength and the optical transitions’ oscillator strength, which are competitive with other approaches in the MIR. This is an original solution which has not been demonstrated so far experimentally. Such InP-based interband cascade lasers are of crucial application importance, particularly for the optical gas sensing.

A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers

Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons (N–t) and the output power (P out–t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N–I) and the output power versus current (L–I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L–I simulation results are well agreed with the experimental results.

Long wavelength (λ &amp;gt; 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

An InP-based quantum cascade laser structure emitting at a wavelength of 13.6 μm is proposed and demonstrated. The active region is based on a diagonal transition and three-phonon-resonance design. A 5 mm long, 30 μm wide high-reflection coated device with a double channel ridge waveguide structure has shown a threshold current density of 3.0 kA/cm2, a dynamic range of 4.4 kA/cm2, a peak output power close to 1 W, and an average optical power up to 11.7 mW at 3% duty cycle, at 293 K. The laser shows a characteristic temperature T0 of 314 K and T1 of 336 K over a temperature range from 283 to 313 K.

C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon.

Quantum-dot (QD) and quantum-dash (QDash) have been shown to be promising gain materials for lasers directly grown on Si due to their better tolerance to crystal defects and thermal stability. Here we report optically pumped InP-based InAs QDash microdisk lasers (MDLs) directly grown on on-axis (001) Si. To the best of our knowledge, this is the first demonstration of room-temperature continuous-wave lasing of a QDash MDL on Si in the C band and L band. To the best of our knowledge, the lowest threshold of around 400 µW and highest operation temperature of 323 K have been achieved. An analysis of experimental results shows that the dominant lasing wavelength of MDLs varies with the thickness and diameter of the MDLs. Our demonstration shows potential application of MDLs for multi-channel operation in densely integrated Si-photonics.

Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.

Broad gain, continuous-wave operation of InP-based quantum cascade laser at λ ∼ 11.8 μm* *Project supported by the National Basic Research Program of China (Grant No. 2018YFA0209103), the National Natural Science Foundation of China (Grant Nos. 61991430, 61774146, 61790583, 61734006, 61835011, 61674144, 61774150, and 61805168), Beijing Municipal Science & Technology Commission, China (Grant No. Z201100004020006), and the Key Projects of

We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm average ridge wide QCL with high-reflection (HR) coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 mW at 293 K. The device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 K. Moreover, the full width at half maximum (FWHM) of the electroluminescent spectrum measured at subthreshold current is 2.37 μm, which indicates a broad gain spectrum of the materials. The tuning range of 1.38 μm is obtained by a grating-coupled external cavity (EC) Littrow configuration, which is beneficial for gas detection.