InP-based HEMTs Research Articles

Triple-channel InP-based HEMT with highly nonlinear transconductance for nonlinear circuit applications

The Letter reports the development of a triple-channel HEMT with two undoped In0.53Ga0.47As layers and a spike-doped In0.52Al0.48As layer on InP, designed to have a strongly nonlinear transconductance. The effective electron velocity and the electron density in the InGaAs layers are higher than in the thick InAlAs layer, resulting in a highly nonlinear transconductance device with the potential for improved performance in nonlinear microwave circuit applications, as compared with conventional MESFETs and HEMTs.

Frequency divider using InAlAs/InGaAs HEMT DCFL-NOR gates

The performance is examined of a divide-by-four circuit based on DCFL-NOR gates using a newly developed enhancement-mode N-InAlAs/InGaAs HEMT technology. A divider, with gates 1.2 μm long, had a maximum clock frequency of 5.8GHz and a power dissipation of 2.5mW/gate. It was found that the switching speed of an InP-based HEMT is 1.5 times faster than that of a GaAs-based HEMT.

Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band

Experimental characteristics of monolithic InAlAs/InGaAs HEMT mixers are presented together with a theoretical analysis. Experiments at W-band show a maximum conversion gain of 0.9 dB with 2 dBm of LO power level. This is the first demonstration of a monolithic HEMT mixer with conversion gain at W-band. The conversion gain dependence on LO power, RF frequency and gate bias is measured and compared with the theoretical predictions. Good agreement between the theory and experiment could be found. >

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

Very low-noise 0.15- mu m gate-length W-band In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP lattice-matched HEMTs are discussed. A maximum extrinsic transconductance of 1300 mS/mm has been measured for the device. At 18 GHz, a noise figure of 0.3 dB with an associated gain of 17.2 dB was measured. The device also exhibited a minimum noise figure of 1.4 dB with 6.6-dB associated gain at 93 GHz. A maximum available gain of 12.6 dB at 95 GHz, corresponding to a maximum frequency of oscillation, f/sub max/, of 405 GHz (-6-dB/octave extrapolation) in the device was measured. These are the best device results yet reported. These results clearly demonstrate the potential of the InP-based HEMTs for low-noise applications, at least up to 100 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The trials of wafer-scale integration : Jack F. McDonald, Edwin H. Rogers, Kenneth Rose and Andrew J. Steckl. IEEE Spectrum 32 (October 1984)

Stacked layer sequences of InP-based HBT and HEMT are of interest for today's (OC-768) and tomorrows (OC-3072, 100 Gbit Ethernet) communication standards. The better low noise performance of the HEMT can be combined with the driver capability of the HBT while also a PIN-photodiode can be provided by the HBT base-collector-diode. However this results in a complex procedure for MOVPE growth process development. For a reliable fabrication of complex radio frequency (opto-)electronic circuit applications a quantitative InP process technology control is necessary starting at the level of device epilayer stacks. In this report the detailed characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turn-around time for the statistical process control (SPC).

Improving bond yields to metal package leads : Doug Day. Semiconductor Int. 90 (July 1984)

Stacked layer sequences of InP-based HBT and HEMT are of interest for today's (OC-768) and tomorrows (OC-3072, 100 Gbit Ethernet) communication standards. The better low noise performance of the HEMT can be combined with the driver capability of the HBT while also a PIN-photodiode can be provided by the HBT base-collector-diode. However this results in a complex procedure for MOVPE growth process development. For a reliable fabrication of complex radio frequency (opto-)electronic circuit applications a quantitative InP process technology control is necessary starting at the level of device epilayer stacks. In this report the detailed characterization of stacked InP/(InGa)As:C HBT and InP/(InGa)As HEMT layer sequences is carried out by non-destructive X-ray analysis. Based on X-ray measurements in 004- and 002-reflection a detailed analysis of complex device layer stacks is purposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turn-around time for the statistical process control (SPC).