Abstract
The Letter reports the development of a triple-channel HEMT with two undoped In0.53Ga0.47As layers and a spike-doped In0.52Al0.48As layer on InP, designed to have a strongly nonlinear transconductance. The effective electron velocity and the electron density in the InGaAs layers are higher than in the thick InAlAs layer, resulting in a highly nonlinear transconductance device with the potential for improved performance in nonlinear microwave circuit applications, as compared with conventional MESFETs and HEMTs.
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