Photoluminescence mapping of 2 inch and 3 inch wafers with AlGaAs/GaAs heterojunction bipolar transistor (HBT) layer sequences is reported. Photoluminescence spectra taken at 77 K on these layers reveal four well distinct emission lines from cap, emitter, collector and base, respectively. The mapping of line intensities and spectral positions allows the analysis of doping, composition and thickness homogeneities influenced by epitaxy or device processing. The characteristics of the luminescence light emitted from GaAs: C base layers and the DC current gain of HBT structures after processing exhibit the same lateral distribution over the wafer. The analysis of the spectra showed that the intensity variations can partially be explained by an inhomogeneous base doping. Luminescence mapping of the HBT base related luminescence line was also performed on partially and fully processed wafers. This measurement allowed a comparison of luminescence data with high frequency device results. We found that the ratio between maximum oscillation frequency f max and transit frequency f T of the HBTs clearly reflect the variation of the base hole concentration.