Abstract
Single crystals of binary III-V-semiconductors, e.g. GaAs or InP, are important basic materials for optoelectronic devices, e.g. LED's and lasers. Device production needs highly perfect substrate crystals with low defect densities and homogeneous dopant distributions. In our experiment we applied the Travelling-Heater-Method to grow the III-V compound GaSb. The aim of this research project was to improve the crystal quality by investigating convective transport phenomena and the origins of dopant inhomogeneities under earth and space conditions. Earth grown crystals show strong dopant variations mainly due to convective flow phenomena. The preliminary result of our SPACELAB 1 experiment reveals an increase of dopant homogeneity in the space grown crystal because of the absence of natural convection under reduced gravity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
