We demonstrate the integration of a nonalloyed contact structure developed for III-V semiconductors to the source/drain of an In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET) with atomic layer deposition (ALD) Al2O3 high-κ dielectric. This nonalloyed contact utilizes single metals in combination with dielectric dipoles to tune the metal/semiconductor Femi level pinning toward the semiconductor’s band edge for minimal contact resistance and barrier height. The metal/III-V semiconductor effective barrier heights have been reduced by as much as 0.40 eV using SiN and 0.55 eV using Al2O3 dielectrics. With this InGaAs nMOSFET as a starting point, this contact can be applied to other III-V n-type MOSFETs, p-type MOSFETs, and Schottky Barrier field effect transistors.