InGaAs and Ge MOSFETs with high κ dielectrics

Abstract

InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al 2O 3/Ga 2O 3(Gd 2O 3) [GGO]/InGaAs has low electrical leakage current densities, C– V characteristics with low interfacial densities of states ( D it ’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage V th with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm 2/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV–Al 2O 3/GGO gate dielectrics and ALD–Al 2O 3. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length.