Infrared Nonlinear Optical Research Articles

Wide band gaps in nonlinear optical materials AMgAgGa6S11 (A = K, Rb) achieved by the incorporation of dual s-block elements in Ag-based sulfide

Infrared (IR) nonlinear optical (NLO) material with a concurrently wide band gap and significant NLO coefficient in a single crystal is an incompatible but addressable challenge. Hence, for the first time, the AgGaS2 structure evolved into an Ag-based sulfide system integrating dual s-block elements, guiding the discovery of two NLO crystals named AMgAgGa6S11 (A = K, 1; Rb, 2). Structurally, title phases possess a novel NLO functional motif [AgGa6S17] assembled by two C2-type supertetrahedra through a shared [AgS4] tetrahedron, in which the electropositive cations A+ and Mg2+ are embedded. Thus, compounds 1 and 2 display emulative band gaps (3.15 and 3.25 eV, exceeding that of 2.65 eV in AgGaS2) toward optimizing the laser-induced damage thresholds (3.1 and 3.2 × AgGaS2 @1064 nm). Remarkably, the noncentrosymmetric phases 1 and 2 exhibit moderate second-harmonic generation (SHG) responses (0.6 and 0.7 × AgGaS2 @1910 nm), the greater-than-commercial half of the AgGaS2. To the best of our current knowledge, an experimental birefringence of 1 and 2 (0.029 and 0.027, @546 nm) is first observed in quinary ordered chalcogenides, indicating that samples 1 and 2 meet phase-matching conditions at the incident laser of 1910 nm. All these observations demonstrate that crystals 1 and 2 can become prospective NLO materials. This research will pave the way for discovering excellent IR NLO crystals with wide band gaps and impressive NLO coefficients by incorporating multiple strong electropositive elements into chalcogenides.

Three-in-One Tetrahedral Functional Units Constructing Diamondlike Ag2In2SiS3.06Se2.94 with High-Performance Nonlinear-Optical Activity.

Exploration of new functional materials with enhanced performance from known ones is always an attractive strategy. A new infrared (IR) nonlinear-optical (NLO) mixed chalcogenide Ag2In2SiS3.06Se2.94 (1), was obtained through partial congener substitution originated from Ag2In2SiS6 (0). 1 crystallizes in the monoclinic space group Cc, and its three-dimensional (3D) polyanionic network is composed of {[In4Si2Se5(S/Se)11]12-}∞ helical chains sharing S/Se(5) corner atoms with cavities embedded with counterion Ag+ ions. It exhibits a much enhanced NLO response compared to that of 0, reaching 1.1 × AgGaS2. Further theoretical analysis results indicate that the large NLO response can be attributed to the synergistic effect of AgQ4 and InQ4 tetrahedral functional motifs. This work not only reports a new high-performance IR NLO material but also enriches the partial ion substitution strategy to obtain new functional materials.

KHg4Ga3S9: A Hg-Based Sulfide with Nonlinear-Optical Activity in the A-MII-MIII-Q (A = Alkali Metal; MII = d10 Metal; MIII = Ga, In; Q = S, Se) System.

The search for new high-performance infrared (IR) nonlinear-optical (NLO) materials is a hot topic in the fields of laser chemistry and inorganic solid-state chemistry. Here, a new Hg-based sulfide KHg4Ga3S9 in the family of A-MII-MIII-Q (A = alkali metal; MII = d10 metal; MIII = Ga, In; Q = S, Se) was synthesized. It crystallizes in the orthogonal system of the C2221 structure, which is rare for IR NLO chalcogenides. Its anionic framework {[Hg4Ga3S9]-}∞ is constructed by two types of interconnected helical chains, viz., the inner layer ({[Hg6Ga2S29/3]4/3-}∞) and the outer layer ({[Hg2Ga4S25/3]2/3-}∞). It exhibits a moderate NLO response and a high laser-induced damage threshold. Theoretical calculations indicate that the HgS4 unit accounts for its much larger NLO response compared to RbCd4Ga3S9. The influence of alkali metals and d10 metals on the initial phase-matching wavelength is also discussed. This work provides inspiration for improving the properties of NLO materials' properties.

Recent advances in IR nonlinear optical chalcogenides with well-balanced comprehensive performance

Infrared nonlinear optical (IR-NLO) crystals have attracted many attentions due to the frequency-conversion capability to generate coherent tunable IR laser output for military and civil applications. Chalcogenides as a most popular branch of IR-NLO materials are the competitive candidates owing to their large second-harmonic generation (SHG) coefficient (deff) and broad transmission regions. Currently, how to obtain the non-centrosymmetric (NCS) structure and realize the coexistence of wide energy gap (Eg ≥ 3.0 eV), sufficient deff (≥ 1.0 × AgGaS2), and beneficial phase-matching (PM) feature are the two major challenges faced in this field. The former can be effectively solved through the combination of local asymmetric units and chemical substitution strategy, while for the latter, there is no systematic survey and lack of universally applicable methodology. In this review, 40 IR-NLO chalcogendides are selected based on the aforementioned two challenges and divided into 7 types according to the different chemical components. The composition-structure-performance relationships and the theoretical origin of their IR-NLO properties are summarized systematically. At length, some useful information and development prospects were briefly discussed, which may offer new ideas and promote the discovery of IR-NLO materials with the ideal comprehensive performance.

Na3SiS3F: A Wide Bandgap Fluorothiosilicate with Unique [SiS3F] Unit and High Laser‐Induced Damage Threshold

AbstractThe exploration of antilaser damage wide bandgap infrared (IR) nonlinear optical (NLO) materials is urgent but challenging. Herein, by introducing the idea of fluorination into chalcogenides, a wide bandgap IR NLO material Na3SiS3F with unprecedented [SiS3F] tetrahedra is designed and synthesized. Na3SiS3F shows a wide bandgap of 4.75 eV (the largest one in the reported quaternary metal chalcogenides), resulting in a high laser damage induced threshold of ≈5 × AgGaS2(AGS). Meanwhile, the compound has a moderate NLO response (≈0.3 ×AGS) with phase‐matching behavior, large birefringence (0.15@1064 nm), and wide IR transparent region. The introduction of fluorine breaks the structural symmetry and broadens the highest occupied molecular orbital‐lowest unoccupied molecular orbital (HOMO‐LUMO) gap, polarizability anisotropy, and hyperpolarizability of the Si–S tetrahedral unit. The results indicate that Na3SiS3F is a promising IR NLO material for the high‐power laser application and open an avenue for the design of new wide bandgap IR NLO materials based on NLO‐active [SiSxF4−x] (x = 1, 2, 3) mixed anionic tetrahedral group.

{[In2S7]8–}∞ Chain and Isolated HgS4 Planar Unit Constructed One-Dimensional Pentanary Sulfide K2Ba7HgIn4S16 Exhibiting Nonlinear-Optical Activity

Hg-based chalcogenides possess diverse structures, large nonlinear-optical (NLO) responses, and suitable birefringences, making them potentially suitable for numerous crucial criteria of practical application as infrared (IR) NLO crystals. Here, a new pentanary Hg-based sulfide K2Ba7HgIn4S16 has been discovered by a high-temperature solid-state method. It crystallizes in the orthorhombic P21212 space group, and its one-dimensional structure is constructed by {[In2S7]8-}∞ chains and isolated [HgS4]6- planar quadrilateral units located bewteeen the chains, representing a novel type of chalcogenide. K2Ba7HgIn4S16 exhibits a moderate NLO effect of 0.5 × AGS at 2.1 μm and a high laser-induced damage threshold of ∼5.8 × AGS, as well as a band gap of 2.98 eV, demonstrating that K2Ba7HgIn4S16 is a potential IR NLO material. This work enriches the structural chemistry of chalcogenides and the family of Hg-based IR NLO chalcogenides.

Zn2BS3Br: An Infrared Nonlinear Optical Material with Significant Dual-Property Enhancements Designed through a Template Grafting Strategy

Developing high-performance infrared nonlinear optical (IR-NLO) materials with high second-harmonic generation (SHG) coefficients (dij) and wide band gaps (Eg) has been a serious challenge owing to the intrinsic negative correlativity between the two key properties. Herein, taking π-delocalized BS3 as core functional motifs (FMs), a template grafting strategy that facilitates dual-property enhancement is proposed and novel thioborates of Zn2BS3Br with target IR-NLO performances are predicted by the first-principles evolutionary algorithm. They not only possess wide band gaps of 3.63–4.05 eV, increasing by 1.0 eV over the benchmark AgGaS2 (AGS, 2.62 eV); moreover, benefiting from the parallel alignments of FMs, five phases exhibit high SHG effects (dij > 1.0 × AGS), particularly I (2.0 × AGS & 3.68 eV) and II (2.2 × AGS & 3.77 eV), in which significant enhancements in dij and Eg can be achieved concurrently, surpassing almost all of the accessible IR-NLO materials. Remarkably, the sufficiently wide band gaps and large birefringence of I and II lead to very short phase-matching wavelengths (λPM = 443.9/370.1 nm), enabling them a dual-waveband application potential, which is rarely found in IR-NLO chalcogenides. In addition, the isomorphic selenides show record high SHG coefficients of 3.8 × AGS in the wide-band-gap range of Eg > 3.0 eV. Therefore, the Zn2BS3Br-family crystals would be promising IR-NLO materials. Profound mechanism explorations conclusively demonstrate the effectiveness of our design strategy.

Unbiased Screening of Novel Infrared Nonlinear Optical Materials with High Thermal Conductivity: Long-neglected Nitrides and Popular Chalcogenides.

Traditional infrared (IR) nonlinear optical (NLO) materials such as AgGaS2 are crucial to key devices for solid-state lasers, however, low laser damage thresholds intrinsically hinder their practical application. Here, a robust strategy is proposed for unbiased high-throughput screening of more than 140 000 materials to explore novel IR NLO materials with high thermal conductivity and wide band gap which are crucial to intrinsic laser damage threshold. Via our strategy, 106 compounds with desired band gaps, NLO coefficients and thermal conductivity are screened out, including 8 nitrides, 68 chalcogenides, in which Sr2 SnS4 is synthesized to verify the reliability of our process. Remarkably, thermal conductivity of nitrides is much higher than that of chalcogenides, e.g., 5×AgGaS2 (5.13 W/m K) for ZrZnN2 , indicating that nitrides could be a long-neglected system for IR NLO materials. This strategy provides a powerful tool for searching NLO compounds with high thermal conductivity.

Unbiased Screening of Novel Infrared Nonlinear Optical Materials with High Thermal Conductivity: Long‐neglected Nitrides and Popular Chalcogenides

AbstractTraditional infrared (IR) nonlinear optical (NLO) materials such as AgGaS2 are crucial to key devices for solid‐state lasers, however, low laser damage thresholds intrinsically hinder their practical application. Here, a robust strategy is proposed for unbiased high‐throughput screening of more than 140 000 materials to explore novel IR NLO materials with high thermal conductivity and wide band gap which are crucial to intrinsic laser damage threshold. Via our strategy, 106 compounds with desired band gaps, NLO coefficients and thermal conductivity are screened out, including 8 nitrides, 68 chalcogenides, in which Sr2SnS4 is synthesized to verify the reliability of our process. Remarkably, thermal conductivity of nitrides is much higher than that of chalcogenides, e.g., 5×AgGaS2 (5.13 W/m K) for ZrZnN2, indicating that nitrides could be a long‐neglected system for IR NLO materials. This strategy provides a powerful tool for searching NLO compounds with high thermal conductivity.

AIB3IIC3IIIQ8VI: A New Family for the Design of Infrared Nonlinear Optical Materials by Coupling Octahedra and Tetrahedra Units.

Large second-harmonic generation (SHG) response and broad band gap are two important and competitive parameters. It is difficult to balance them out in one material. In this work, by coupling alkali earth metal (AEM) octahedra with large highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap and nonlinear optical (NLO)-active tetrahedra units, nine noncentrosymmetric (NCS) compounds, belonging to a new quaternary chalcogenide family AIB3IIC3IIIQ8VI with unique windmill-like [Mg3M3IIIQ24] (MIII = Al, Ga; Q = S, Se) units constructed by alternated [MgQ6] octahedra and [MIIIQ4] tetrahedra, are rationally designed and fabricated. The compounds show a stable structural framework but adjustable optical properties. Among them, NaMg3Ga3Se8 shows a large SHG response (∼1 × AgGaS2 (AGS)), wide band gap (in selenide) (2.77 eV), high laser-induced damage threshold (LIDT) (∼2.3 × AGS), and suitable birefringence (0.079@546 nm). It should be a potential candidate for infrared (IR) nonlinear optical (NLO) materials. The results enrich the chemical diversity of chalcogenides and open an avenue for the development of new IR NLO materials through the octahedra and tetrahedra coupled strategy.

LiAlS2: A promising infrared frequency-conversion material with ultrawide band gap and high laser-induced damage threshold

The development of infrared (IR) nonlinear optical (NLO) crystals could foster their wide applications in civil and military fields. Thus, IR NLO materials with a wide band gap, high laser-induced damage threshold, and lack of two-photon absorption are urgently needed. This work reports the comprehensive optical properties of LiAlS2 through systematic experimental characterizations and the first principle study. The results confirmed the congruently melting feature of LiAlS2, type-I phase matching (PM) performance, and its second-harmonic generation (SHG) response (0.2 × AgGaS2 at 2.09 µm). Notably, LiAlS2 shows the widest band gap of 5.13 eV among the selected IR NLO materials and an ultrahigh laser-induced damage threshold about 28 times that of AgGaS2. The structure-property relationship analysis indicates that the [AlS4] tetrahedra determine the optical band gap and primarily contribute to the SHG response. Moreover, the calculated effective SHG coefficient deff, the refractive index dispersion relation, and the shortest PM wavelength are reported. The results of this study indicate that LiAlS2 can be a promising IR NLO material in high-energy laser systems.

Chalcohalides: A Rising Type of Second‐Order Nonlinear Optical Materials

AbstractIn the past few decades, many new infrared (IR) second‐order nonlinear optical (NLO) materials have been prepared by various synthetic methods to satisfy the growing market demand. However, few ones have the high potentials to be applicable since their comprehensive NLO properties cannot meet the standards, which include a series of indicators like large NLO effects, high laser‐induced damage thresholds (LIDTs), phase matchability, high thermal stability, good growth habit, and so on. Considering the available IR NLO materials’ disadvantages and the market requirements, it is necessary to continuously explore new high‐performance ones. Hitherto, lots of chalcogenides, halides, and oxides have been explored as IR NLO materials. Recently, researchers have found that the combination of two or more structural units into one structure may achieve good NLO properties, as evidenced by the fact that diverse materials with multiple anions are receiving growing interest. Specifically, chalcohalides are highly promising as they may combine the advantages of chalcogenides and halides,viz. large NLO coefficients and wide IR transparency of the former, and large band gaps and high LIDTs of the latter. To address the status of chalcohalides, this review focuses on the newest progresses on this topic (mainly from the last five years), including ternary chalcohalides, quaternary chalcohalides, salt‐inclusion chalcohalides, and rare‐earth chalcohalides. Here we summarize and analyze their compositions, crystal structures, NLO properties, and discuss the structure‐property relationship. Finally, the development prospects for NLO chalcohalides are given.

Ag[SC(NH2)2]2F: A Laser Damage-Tolerant Infrared Nonlinear Optical Material

Mild hydrothermal reactions of π-conjugated SC(NH2)2, Ag(NO3), and NaF afforded a new prospective infrared (IR) nonlinear optical (NLO) crystal, namely, Ag[SC(NH2)2]2F. It shows a 3D open framework consisting of corner-sharing AgS4 tetrahedra with six-member ring tunnels that are filled by organic groups of the SC(NH2)2 molecules. Ag[SC(NH2)2]2F maintains 80% transmittance in the spectral region of 0.32–5.91 μm and features large second harmonic generation (SHG) responses with phase-matching at both 1064 nm (15.8 × KH2PO4) and 2.05 μm (0.7 × AgGaS2). It also exhibits a large band gap of 4.19 eV, resulting in a high laser-induced damage threshold (LIDT) of 9.3 times that of AgGaS2. Theoretical calculation revealed that SC(NH2)2, AgS4 tetrahedra, and F– anions all give the positive contribution to SHG effects. Ag[SC(NH2)2]2F overcomes the small band gap and low LIDT of tetrahedral-based chalcogenides while maintaining a large SHG response. This work gives a promising facile design strategy for IR NLO materials.

Simple yet extraordinary: Super-polyhedra-built 3D chalcogenide framework of Cs5Ga9S16 with excellent infrared nonlinear optical performance

Non-centrosymmetric chalcogenides are attracting considerable attention as highly promising infrared nonlinear optical (IR-NLO) candidates, but it is challenging to simultaneously achieve sufficient second-harmonic-generation coefficient (deff > 0.5 × AgGaS2) and large energy gap (Eg > 3.5 eV). In this work, a novel ternary chalcogenide, Cs5Ga9S16 with an ultra-wide Eg of 4.05 eV, has been successfully obtained. This sulfide belongs to the monoclinic space group Pn (No. 7) with a novel 3D anionic [Ga9S16]5– framework that is formed by super-polyhedral [Ga9S23] units through corner-sharing S atoms. Such a unique crystal structure displays desirable characteristics which indicate a promising IR-NLO candidate: favourable phase-matching feature, sufficient deff (0.7 × AgGaS2), ultrahigh laser-induced damage threshold (31.6 × AgGaS2) and broad transparent region (0.27−14.96 µm). In addition, systematic theoretical studies and structural analysis suggest that the desirable IR-NLO performances can be attributed to the super-polyhedral building blocks. This finding may provide useful insight into the understanding and designing other high-performance IR-NLO candidates with super-polyhedral-built structures.

三元AGa5S8 (A = K, Rb, Cs): 通过“一替多取代”策略制备的红外非线性光学材料

Commercially available infrared (IR) nonlinear optical (NLO) materials, such as diamond-like AgGaQ2 (Q = S, Se), display large NLO coefficients but relatively low laser-induced damage thresholds (LIDTs), which seriously hinder their widespread laser applications. Herein, the “one-for-multiple substitution” strategy, namely, [SZn46+ + 5Zn2+ ⇒ A+ + 5Ga3+] (A = K, Rb and Cs), is applied on the diamond-like zinc-blende ZnS, and affords three new polar ternary crystals AGa5S8 (A = K, Rb and Cs) through the solid-state method. These compounds inherit the diamond-like anionic backbone framework in ZnS where the NLO functional motifs GaS4 are arranged in a parallel manner. This characteristic accounts for the remarkable phase-matchable second-harmonic generation intensities (1.1–1.2 × AgGaS2). In addition, the inclusion of the highly electropositive A+ cations affords a band gap ranging from 3.10 to 3.37 eV, which facilitates the improvement of LIDT (9.3–12.4 × AgGaS2). To the best our knowledge, crystals AGa5S8 (A = K, Rb and Cs) are the first series of ternary A-inclusion chalcogenides with large second-harmonic generation responses (≥1.0 × AgGaS2) and wide band gaps (≥3.0 eV), fulfilling the rigorous requirements of outstanding IR NLO materials. In addition, the “one-for-multiple substitution” strategy presents the great significance of diamondlike structure evolution and provides a remarkable opportunity to achieve NLO materials.

Oxychalcogenides as Promising Ultraviolet Nonlinear Optical Candidates: Experimental and Theoretical Studies of AEGeOS2 (AE = Sr and Ba).

Oxychalcogenides have gained widespread attention as promising infrared nonlinear optical (IR-NLO) candidates. However, high-performance oxychalcogenides have rarely been reported in the ultraviolet (UV) region owing to the low energy gaps (Eg < 4.0 eV). Herein, two non-centrosymmetric (NCS) oxychalcogenides with one-dimensional (1D) chain structures and wide Eg (>4.3 eV), namely, AEGeOS2 (AE = Sr and Ba), have been discovered by combined experiments and theory calculations as a new source of UV-NLO materials. Significantly, they exhibit excellent comprehensive performance comparable to the commercial UV-NLO material KH2PO4 (KDP), including large phase-matching ranges (>380 nm), sufficient second harmonic generation intensities (0.7-1.1 × KDP), high laser-induced damage thresholds (1.2 × KDP), wide transparent regions (0.26-12.2 μm), and good thermal stability (up to 1100 K). Moreover, systematic structure-activity relationship analysis illustrates that the 1D homochiral helical [GeOS2]2- chains composed of heteroanionic [GeS2O2] units make major contribution to the desirable UV-NLO performance. This work makes the two compounds shine out as new energy in the UV-NLO field and offers a new perspective for the exploration of structure-driven functional oxychalcogenides.

(Na0.74 Ag1.26 )BaSnS4 : A New AgGaS2 -Type Nonlinear Optical Sulfide with a Wide Band Gap and High Laser Induced Damage Threshold.

The development of high-power solid-state lasers is in urgent need of infrared (IR) nonlinear optical (NLO) materials with wide band gaps and high laser-induced damage thresholds (LIDTs). Herein, a new compressed chalcopyrite-like IR NLO crystal (Na0.74 Ag1.26 )BaSnS4 was successfully synthesized using a facile high-temperature solid-state method. Its structure can be considered as a variant of chalcopyrite AgGaS2 (AGS)-type ones. It features a three-dimensional framework constructed by corner-sharing {[(Na/Ag)S4 ]7- }∞ layers and isolated SnS4 tetrahedra with negative cavities occupied by counter ion Ba2+ . (Na0.74 Ag1.26 )BaSnS4 exhibits phase-matchable moderate SHG response (0.31 × AGS), wide band gap (3.70 eV), and high LIDT (6.44 × AGS). Theoretical calculations reveal that the NLO response of (Na0.74 Ag1.26 )BaSnS4 is mainly originated from the synergetic effects of AgS4 and SnS4 tetrahedra, and the inclusion of alkaline and alkaline earth metals is responsible for the wide band gap and high LIDT. Moreover, the discovery of this chalcopyrite-like compound will provide a feasible design strategy for the exploration of new promising IR NLO materials.

Mixed-Anion-Oriented Design of LnMGa3S6O (Ln = La, Pr, and Nd; M = Ca and Sr) Nonlinear Optical Oxysulfides with Targeted Property Balance

Nonlinear optical (NLO) crystals are of importance on extending infrared (IR) laser wavelengths. Considering their performance drawbacks in commercial IR NLO crystals, a recent challenge in exploring new excellent IR NLO crystals is how to break the inherent conflict between a wide bandgap (Eg ≥ 3.0 eV) and large NLO effect (dij ≥ 0.5 × AgGaS2) and simultaneously enlarge the birefringence (Δn) for a requisite phase-matching (PM) behavior. For that reason, rational combination of mixed-anion functional groups into a crystal structure affords the successful design and synthesis of six LnMGa3S6O (Ln = La, Pr, and Nd; M = Ca and Sr) NLO oxysulfides. Among them, LaMGa3S6O satisfy the property-balance demand (Eg: 3.21-3.27 eV and dij: 0.9-1.0 × AgGaS2) as promising PM NLO crystals through gathering their property advantages between LaMGa3O7 and LaMGa3S7 by mixed-anion-oriented performance engineering. A study on the structure-property relationship indicates that heteroleptic (Ln/M)S7O and GaS3O anionic groups are proven as promising NLO-active units and offer a great synergistic effect on the NLO origin. This work as a visualized model not only provides a first clear cognition on varying properties from oxide to sulfide to oxysulfide but also highlights the feasibility of mixed-anion-oriented design of new NLO candidates with balanced performances.

Design of Infrared Nonlinear Optical Compounds with Diamond-like Structures and Balanced Optical Performance.

Infrared (IR) nonlinear optical (NLO) crystals are the major materials to widen the output range of solid-state lasers to mid-infrared regions, but they are still inadequate for application due to the difficulties in balancing the large band gaps and strong NLO response. The diamond-like structure is a potential structural template to explore IR NLO materials. Herein, a computational workflow is proposed for exploring compounds with diamond-like structures, a series of LiMgGaSe3 structures were predicted successfully through this workflow, and LiMgGaSe3-I-III exhibited good optical performances in a large band gap (2.75-2.92 eV), strong SHG response (1.2-1.3 × AGS), and suitable birefringence (0.0470-0.0783 at 1064 nm). The in-depth mechanism explorations strongly demonstrate that the synergistic effect of alkaline earth metal tetrahedral [MgSe4] and [GaSe4] units is the main origin of large SHG response. The foregoing results suggest that our workflow can accelerate the discovery of new mid-IR NLO materials with diamond-like structures.

Heteroanionic Melilite Oxysulfide: A Promising Infrared Nonlinear Optical Candidate with a Strong Second-Harmonic Generation Response, Sufficient Birefringence, and Wide Bandgap.

The achievement of balanced performance with a strong second-harmonic generation (SHG) response, proper birefringence, and wide band gap concurrently is a crucial but challenging task in infrared nonlinear optical (IR-NLO) crystals. Here, we theoretically confirmed that the heteroanionic oxysulfide tetrahedron would produce improved polarizability anisotropy and quadratic hyperpolarizability compared with the monoanionic oxide or sulfide tetrahedra. When this anion-mixing strategy was applied, melilite oxysulfide with the four representative members A2GeGa2OS6 (A = Ca, Sr) and Sr2MGe2OS6 (M = Zn, Cd) was successfully discovered as a promising IR-NLO material system. Remarkably, compared with the monoanionic melilite oxides, these compounds exhibited unbiased performances of proper birefringences (0.106-0.143), strong SHG responses (>10× melilite oxide Ba2CdGe2O7, 1.3-2.1× AgGaS2 (AGS) @1570 nm) with phase-matchable ability, wide band gaps (2.95-3.15 eV), and large laser-induced damage thresholds (LIDTs, 5.6-13.4× AGS). The high structure tolerance of melilite offers a great possibility to improve the SHG response via tuning the orbital composition and hybridization near band edges. This work provides an effective approach for the design of high-performance IR-NLO materials.