Influence Of Surface Recombination Research Articles

Influence of surface recombination on stimulated emission threshold of semiconductor lasers

A theoretical study is made of the influence of diffusion and surface recombination on the spatial distribution of nonequilibrium carriers with depth and on the optical gain of an electron-beam-excited semiconductor laser. The dependences of the threshold current on the diffusion length, surface recombination velocity, and thickness of the dead layer are found for the longitudinal and transverse electron-beam pumping configurations.

The influence of surface recombination on some properties of semiconductor devices—steady-state relationships : Ewa Kurjata-Pfitzner. Electron Technol.20, (4) 23 (1977)

The influence of surface recombination on some properties of semiconductor devices—steady-state relationships : Ewa Kurjata-Pfitzner. Electron Technol.20, (4) 23 (1977)

Influence of surface recombination in satellite atomic oxygen measurements inferred from the AEROS‐A mass spectrometer

Although the assumption of complete and immediate recombination of atmospheric atomic oxygen at the surfaces of the open ion source of the AEROS‐A mass spectrometer is reasonable below 300 km, application of this assumption at higher altitudes results in a substantial underestimation of the ambient density of atomic oxygen. A two layer surface model seems necessary to explain the observations. Parameters for several surface reaction processes are estimated.

Minority-Carrier Diffusion Lengths in GaAs:Ge by Scanning Electron Microscopy

Scanning electron beam determinations of minority-carrier diffusion lengths in semiconductors have been viewed with some suspicion, because of uncertainty about the influence of surface recombination. We have recently made a series of observations which show that the bulk and surface effects can be easily separated, so that reliable volume diffusion lengths are obtained by the scanning beam method.The specimens were GaAs diodes grown with varying concentrations of Ge in the p-layers. The diodes were cleaved normal to the pn junction and examined in a Cambridge Stereoscan, with the beam normal to the cleaved surface and linescanned in a direction perpendicular to the line of intersection of the junction with the surface.

Photoconductivity in germanium doped with gold

Detailed correlation between theoretical and experimental behavior of photoconductivity in p-type Ge:Au is presented. The electron capture coefficient of Au in the donor state, γn+, is obtained as 5.0×10−7cm3 sec−1. The theoretical spatial distribution of excess free carriers and impurities in the various ionized states, for surface generation of electron-hole pairs, is presented. The influence of surface recombination on photoconductive characteristics is considered. The excitation source was a spontaneous-emitting GaAs diode which allowed the intensity of infrared emission to be easily and accurately controlled.

Influence of wafer thickness and carrier recombination on the cutoff frequency of alloy-junction transistors

The influence of wafer thickness and carrier recombination on the α-cutoff frequency of the “intrinsic” transistor is studied. First, M oyjes' solution of the diffusion of minority carriers in a symmetrical junction transistor is used to find the d.c. transport factor. This is then converted to the a.c. case and finally an implicit equation is found for the cutoff frequency as a function of wafer thickness θ and surface recombination velocity S. It is shown that, for S < 3000 cm/sec, the influence of surface recombination is negligible. At very narrow basewidths the current density is very high at the emitter edge and this decreases the diffusion length. More important seems to be the fact that the carriers' path (from slanted edge of emitter to slanted edge of collector) is longer than the geometrical basewidth. A reduction in wafer thickness decreases this effect and thus increases the cutoff frequency, in spite of increasing the current density at the emitter edge. The most important equations have been represented graphically for the particular case of the STC TK20 transistor.