Abstract
Scanning electron beam determinations of minority-carrier diffusion lengths in semiconductors have been viewed with some suspicion, because of uncertainty about the influence of surface recombination. We have recently made a series of observations which show that the bulk and surface effects can be easily separated, so that reliable volume diffusion lengths are obtained by the scanning beam method.The specimens were GaAs diodes grown with varying concentrations of Ge in the p-layers. The diodes were cleaved normal to the pn junction and examined in a Cambridge Stereoscan, with the beam normal to the cleaved surface and linescanned in a direction perpendicular to the line of intersection of the junction with the surface.
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