Influence Of Subsequent Heat Treatment Research Articles

Influence of Heat Treatment on Microstructure and Mechanical Properties of Direct-Quenched Fe-0.06C-0.2Si-2.0Mn Steel

In this study, the effect of subsequent heat treatment applied to high-strength low-alloy steel (HSLA) on the structure–property relationships was investigated. Tempering and intercritical annealing processes are introduced to elucidate the influence of subsequent heat treatment on mechanical properties of direct-quenched Fe-0.06C-0.2Si-2.0Mn steel from a microstructural perspective. The tempering process results in a typical tempered martensite with uniformly dispersed cementite, whereas the intercritical annealing process forms a dual-phase microstructure composed of soft ferrite and hard martensite for the direct-quenched steel. In the intercritical annealed steel, a number of mobile dislocations at the interphase (martensite/ferrite) boundary significantly decrease the yield strength, and the large difference in strength between ferrite and martensite enhances work hardening. Charpy V-notch impact test results indicate that the tempering and intercritical annealing processes improved the absorbed energy by more than 100 J compared to the direct-quenched steel at room temperature, and at −50 °C, the intercritically annealed steel exhibited the highest absorbed energy of approximately 140 J. Additionally, the high fraction of high-angle grain boundaries and fine grains of the intercritically annealed steel increase the resistance to cleavage crack propagation, thereby reducing the ductile-to-brittle transition temperature.

The effect of subsequent heat treatment on the evolution behavior of second phase particles and mechanical properties of the Inconel 718 superalloy manufactured by selective laser melting

In this work, the influence of subsequent heat treatment on the evolution behavior of Laves phase, δ phase and carbides, and mechanical properties were investigated systematically for the Inconel 718 superalloy manufactured by selective laser melting (SLM). Two different subsequent heat treatment schemes were employed for SLM manufactured Inconel 718 superalloy in our work: 980 °C * 1 h/AC + 720 °C * 8 h/FC to 620 °C * 8 h/AC (the standard heat treatment scheme, SA980) and 1080 °C * 1 h/AC + 720 °C * 8 h/FC to 620 °C * 8 h/AC (the optimized heat treatment scheme, SA1080). The results show that the δ phase can nucleate around the residual Laves phase, and then the composite phase particles are formed at the subgrain boundaries during SA980 heat treatment of SLM manufactured Inconel 718. Moreover, the entangled dislocations around these composite phase particles can promote the initiation of microcrack during the tensile process at elevated temperature, leading to premature failure. On the other hand, two types of carbides were found to exist in the SA1080 heat-treated samples: the nanoscale TiC particles along subgrain boundaries originally formed during the SLM process, and the large-size NbC particles along the grain boundaries formed during the solution heat treatment process. The heat treatment schemes of SA1080 can achieve excellent combination of strength and elongation at room temperature and elevated temperature, which is more suitable for the subsequent heat treatment of SLM manufactured IN718.

The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions

Irradiation of crystalline n-type silicon carbide (n-SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating (i-SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i-SiC layers has been studied. The most high-ohmic ion-irradiated i-SiC layers with room-temperature resistivity of no less than 1.6 × 1013 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 107 Ω cm.

Влияние термообработки на электрические характеристики полуизолирующих слоев, полученных с помощью облучения n-SiC высокоэнергетическими ионами аргона

AbstractIrradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-irradiated i -SiC layers with room-temperature resistivity of no less than 1.6 × 10^13 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 10^7 Ω cm.

Splat Formation and Adhesion Mechanisms of Cold Gas-Sprayed Al Coatings on Al2O3 Substrates

The metallization of ceramics by means of cold gas spraying (CGS) has been in the focus of numerous publications in the recent past. However, the bonding mechanism of metallic coatings on non-ductile substrates is still not fully understood. Former investigations of titanium coatings deposited on corundum revealed that a combination of recrystallization induced by adiabatic shear processes and hetero-epitaxial growth might be responsible for the high adhesion strengths of coatings applied on smooth ceramic surfaces. In the present work, the interface formation between CGS aluminum and alumina substrates is examined for different particle sizes and substrate temperatures. Furthermore, the influence of subsequent heat treatment on tensile strength and hardness is investigated. The splat formation of single particles is examined by means of scanning electron microscopy, while a high resolution transmission electron microscope is used to study the Al/Al2O3 interface. First results suggest that mechanical interlocking is the primary adhesion mechanism on polycrystalline substrates having the roughness in sub-micrometer range, while the heteroepitaxy between Al and Al2O3 can be considered as the main bonding mechanism for single-crystalline sapphire (α-Al2O3) substrates with the surface roughness in nanometer range. The heteroepitaxial growth is facilitated by deformation-induced recrystallisation of CGS aluminum.

Hafnium Oxide Doped Mesostructured Silica Films

AbstractHafnium oxide doped silica films with ordered mesostructures were produced with hafnium:silicon ratios between 1:60 and 1:6. A surfactant–hafnium alkoxide complex was synthesized and used as a template in a sol–gel dip‐coating process. Face‐centred orthorhombic, 2D centred rectangular and lamellar films were formed by evaporation‐induced self‐assembly (EISA). The influence of subsequent heat treatment was studied by GISAXS and TEM. The surface and in‐depth molecular composition of the films was studied by XPS.(© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2007)