Abstract
AbstractIrradiation of crystalline n -type silicon carbide ( n -SiC) with high-energy (53-MeV) argon ions was used to create near-surface semi-insulating ( i -SiC) layers. The influence of subsequent heat treatment on the electrical characteristics of i -SiC layers has been studied. The most high-ohmic ion-irradiated i -SiC layers with room-temperature resistivity of no less than 1.6 × 10^13 Ω cm were obtained upon the heat treatment at 600°C, whereas the resistivity of such layers heat-treated at 230°C was about 5 × 10^7 Ω cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
