Influence Of Ion Implantation Research Articles

Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate

The systems Ni film - lithium niobate and Pd film - lithium tantalate are implanted by Ar + ions with an energy of 100 keV and a dose of 10 16 cm -2 . Analyses of the systems by AFM and SEM have shown that the ion implantation essentially modifies the near-surface structure resulting in a change of its optical, electrical, and mechanical properties. Strong difference in the near-surface structures between implanted systems with Ni or Pd thin films is observed. Such a difference is explained by the heterogeneity of an ion beam and different properties of the materials. The application to the development of high-sensitive pyroelectric detectors with high damage threshold is proposed.

Nanotechnology in compressor and pump engineering

The influence of ion implantation on the state of surface microrelief of high-alloy steels has been studied. The relationships of the complex roughness parameter of 12Kh18N10T steel with the energy of particles implanted with molybdenum ions as well as of the microhardness HV with the depth of indentor penetration into the specimen implanted with molybdenum, yttrium, and molybdenum + yttrium ions are given.

Influence of ion implantation on titanium surfaces for medical applications

The implantation of ions into the near surface layer is a new approach to improve the osseointegration of metallic biomaterials like titanium. Meanwhile it is well known that surface topography and surface physico-chemistry as well as visco-elastic properties influence the cell response after implantation of implants into the human body. To optimize the cell response of titanium, ion implantation techniques have been used to integrate calcium and phosphorus, both elements present in the inorganic bone phase. In this context, the concentration profile of the detected elements and their chemical state have been investigated using X-ray photoelectron spectroscopy and Auger electron spectroscopy depth profiling. Ion implantation leads to strong changes of the chemical composition of the near surface region, which are expected to modify the biofunctionality as observed in previous experiments on the cell response. The co-implantation of calcium and phosphorus samples, which showed best results in the performed tests (biological and physical), leads to a strong modification of the chemical surface composition.

Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

A biodegradable, β-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the β-emitter 32P. The influence of ion implantation and gamma sterilisation on degradation and 32P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (1015 ions/cm2) and gamma dose (25kGy) are found to be tolerable.

Influence of Ion Implantation of Several Elements on Oxidation Behavior of TiAl

TiAl-based alloys have attractive properties as light weight heat-resisting material. In the present work, the influence of Cu, Zn, Ag and Se on the oxidation behavior of TiAl was investigated by ion implantation at acceleration voltage of 50 kV and ion doses of 1019 to 2x1021 ions/m2. The oxidation behavior was assessed by a cyclic oxidation test at 1200 K in a flow of purified oxygen under atmospheric pressure. The oxidation products were analyzed by conventional methods including X-ray diffractometry, SEM and EPMA. The implantation of Zn and Cu improves the oxidation resistance significantly by forming virtually Al2O3 scales, while Ag and Se enhance the oxidation. The improvement by Zn is attributable to the formation of complex oxide of Zn in the initial stage of oxidation. The oxygen partial pressure under the layer seems to be very low, resulting in the formation of alumina scale due to a selective oxidation of Al. The influence of Cu is not certain. The influence of Ag and Se is explained in terms of Al depletion in the implanted layer.

Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

Influence of ion implantation on the magnetic properties of thin FeCo films

Modifications of 73-nm-thick polycrystalline FeCo films by magnetic-field-assisted implantation of Ne, Xe, and Au ions have been investigated. For magnetic characterization, the longitudinal magneto-optic Kerr effect and magnetic force microscopy (MFM) in the remanent state have been used, while structural information has been gained from glancing-angle x-ray diffraction and Rutherford backscattering spectroscopy. The irradiated films show a soft-magnetic behavior with large magnetic anisotropy. The Ne ions initially induce an increasing coercivity, possibly due to radiation defects accumulated during the ion implantation, while higher Ne fluences anneal out the defects and reduce the coercivity. For the heavy ions the deposited energy density is high enough to reduce the coercivity at small fluences and then to increase it slightly for increasing fluence. Correlations between the magnetic anisotropy, coercivity and the ion species and fluence have been established. The MFM pictures feature the largest changes in the case of Au ions. The magnetic anisotropy reflects the interplay between magnetocrystalline and magnetostrictive forces. For heavier ions and large fluences, the direction of the in-plane magnetic easy axis follows the orientation of the external magnetic field present during implantation.

The influence of ion implantation by phosphorous on structural changes in porous silicon

The influence of ion implantation by phosphorous on structural changes in porous silicon

Target poisoning during reactive magnetron sputtering: Part I: the influence of ion implantation

Gettering plays a minor role during reactive sputtering of silicon in a nitrogen/argon mixture. However, an abrupt increase of the target voltage as a function of the nitrogen mole fraction is noticed which is not expected from the classical models explaining reactive magnetron sputtering. To explain the target voltage behaviour during DC magnetron sputtering of silicon in an argon/nitrogen mixture, a model is proposed which is based on the reactive ion implantation into the subsurface region of the silicon target. The model calculates the concentration of the nitrogen ions implanted into the target and assumes three possible pathways for these implanted ions. A first pathway is the chemical reaction between the implanted nitrogen ions and the target material to form silicon nitride. The implanted nitrogen can also remain in the target as non-reacted nitrogen atoms. Or, the nitrogen atoms can recombine in the target and diffuse from the target. The compound formation results in a decrease of the target surface recession speed or target erosion rate. As the surface concentration of the implanted ions is inversely proportional to the surface recession speed, an avalanche situation becomes possible. This abrupt transition in recession speed is accompanied with a sudden increase of the concentration of non-reacted nitrogen atoms in the target. In this way, the abrupt target voltage change, noticed at a given mole fraction of nitrogen in the plasma, can be understood.

Soft X-ray absorption spectroscopy study of the effects of Si, Ce, and Mo ion implantation on the passive layer of AISI 304 stainless steel

The chemical modifications introduced in the passive layer of AISI 304 stainless steel after Si, Ce, and Mo ion implantation were investigated and compared with non-implanted steel by soft X-ray absorption spectroscopy. The influence of ion implantation on the passive properties was evaluated by measuring soft X-ray absorption spectra at the Cr, Fe, Ni, Mn and Si 2p in addition to oxygen 1s thresholds. All ion implanted samples show a relative Cr-enrichment at the surface as compared with non-implanted samples. Fe 2p as well as O 1s spectral changes reveal chemical differences in the passive layer as a function of the element ion-implanted.

Surface modification of polyimide film by ion implantation

AbstractThe influence of ion implantation on the surface properties of polyimide was studied. We investigated microhardness, friction, wear and wettablility of polyimide. Energies of 50 keV and 200 keV were used, with doses ranging from 1 × 1013 to 1 × 1016 ion cm−2. The implanted ion species were B, N and Ar. The microhardness of polyimide increased after implantation for doses higher than 1 × 1015 ion cm−2. A reduction of the friction coefficient was in most cases correlated with a reduction of wear. The contact angles of water for B‐ and N‐implanted polyimide decreased, as the doses increased at energies of 50 keV and 200 keV. As time elapsed, the contact angle for B‐ and N‐implanted polyimide films gradually increased and finally approached the initial value under ambient room conditions. However, the contact angle of Ar‐ion‐implanted polyimide did not change under ambient room conditions, even after a few months had elapsed.© 2002 Society of Chemical Industry

Influence of ion implantation and annealing on composition and structure of GaAs surface

Influence of ion implantation and annealing on composition and structure of GaAs surface

The influence of ion implantation on the properties of titanium nitride layer deposited by magnetron sputtering

A new deposition method, by combining standard magnetron sputtering and ion implantation, has been developed. Some characteristics of the layers produced by this method have been investigated in comparison with the standard TiN coating obtained by conventional magnetron sputtering. The new coatings have a hardness of ∼5000 HV0.04, a thickness up 15 μm and a structure close to Ti 2N. The width of the layer–substrate interface is significantly larger than usual and this ensures very good adhesion.

X-ray determination of strain in ion implanted GaN

The out-of-plane c, and in-plane a, lattice parameters of wurtzite gallium nitride (GaN) films, grown on the [0 0 0 1] basal plane of sapphire have been determined and the impact of ion implantation having dose between 5×10 13 and 5×10 15 cm −2 investigated. The thickness of the GaN layers was in the 1–3.5 μm range. The overall effect of the (0 0 0 1) GaN growth on (0 0 0 1) sapphire is biaxial compression in wurtzite α-GaN. Earlier X-ray studies have indicated that the films of GaN grow either purely in α-GaN phase or in α-GaN phase with a cubic β-GaN component. In contrast, our high-resolution X-ray diffraction (XRD) measurement revealed two isostructural polymorphs of α-GaN phases having different lattice parameters. Influence of ion implantation is to increase the values of lattice parameters a and c and could be rationalized in terms of an increase in the defects. At doses above 5×10 15 cm −2, XRD analysis indicates the existence of an amorphous layer preventing the determination of a and c accurately.

Applications of soft X-ray absorption spectroscopy to the study of passive and oxide layers on stainless steels: influence of ion implantation

Abstract Soft X-ray absorption spectroscopy (XAS) has been used to study the influence of Si ion implantation on the passive layer of AISI 304 stainless steel, as well as on its high-temperature oxidation behaviour. Ion implantation is a usual technique to improve the corrosion and oxidation resistance of steels. To study the effects of ion implantation on the room temperature corrosion behavior of AISI 304 stainless steel, XAS was performed on the passive layer formed spontaneously in contact with air. To analyse the effects of ion implantation at high temperatures, the oxide layer formed after an isothermal oxidation at 900°C for 32 h was also studied. The results show a positive influence of Si ion implantation on the corrosion behaviour of AISI 304 stainless steel. XAS in the soft X-ray excitation mode has proved to be a very suitable technique to perform corrosion science studies.

Implantation of heavy ions in magneto optical multilayers and alloys

This paper presents the influence of ion implantation and subsequent annealing on magneto optical multilayers of Tb-Fe and alloys of TbFeCo. The layers are prepared by sputtering and have a perpendicular magnetic anisotropy (PMA). After the implantation of heavy ions the PMA changes in dependence on the ion fluence to the in-plane state and effects the stresses in the alloy layers.

Studies on the ion-beam modifications in ethylene diamine sulphate

The growth features, defect sub-structure and the influence of ion implantation on the (001) and (100) surfaces of ethylene diamine sulphate (EDS) single crystals have been studied. The surface micromorphology and defect substructure measurements of surface electrical conductivity and microhardness in both as-grown and He+ ion-implanted surfaces of EDS have also been studied. Optical and scanning electron microscopic investigations on the (001) surface of EDS revealed octogonal mother-liquor inclusions and spiral and hopper growth features. Chemical etching of the (100) surface revealed an increase in dislocation density on ion implantation, the etch pit morphology remaining the same. Studies on planar plastic anisotropy in both (001) and (100) surfaces indicated the crystallographic nature of the single crystal. Enhancement of surface electrical conductivity on ion implantation has been attributed to the formation, migration and increase in SO −4 ion concentration relative to the as-grown EDS surfaces.

Influence of ion implantation on the properties of TiN coatings deposited by electro-arc evaporation on to steel

TiN coatings have been deposited on nitrogen (30keV) and boron (50keV) ion implanted steel substrates by electro-arc evaporation. The coatings were also implanted with nitrogen ( E = 30 keV) and boron ( E = 50 keV) ions at implantation doses of 1 × 10 16, 5 × 10 16 and 1 × 10 17 ions cm −2, respectively. The coating topography, phase composition, distribution of the elements in the coating and steel substrate were studied by SEM and X-ray diffraction and the influence of ion implantation on the characteristics of the coatings investigated. The experimental results show that the boron implanted TiN coatings have a better adhesion than those of implanted nitrogen and ion implantation improves the wear resistance of the coatings.

Ion implantation to improve mechanical and electrical properties of resistive materials based on ruthenium dioxide

This paper reports the influence of ion implantation, using different chemical species, on the surface micromorphology, wear resistance, coefficient of friction and electrical resistivity, and its variation during friction for resistive materials based on ruthenium dioxide. It is demonstrated that nitrogen and hydrogen ions are the most effective for modifying surface properties.

Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere

We investigated the native oxidation of ion-implanted Si(100) surfaces in anticipation of a future necessity for controlling native oxidation during semiconductor device fabrication. Quantitative analysis of XPS spectra was used to estimate SiO 2 and SiO x thicknesses. Native oxidation of Si(100) wafers in which were implanted with As, P, B or Si was examined. The results show that oxidation of As or P-implanted Si is much faster than that of Si without implantation, however, no conclusive difference was found between the oxidation rates of B or Si-implanted Si and that of Si without implantation. These results indicate that native oxidation is influenced mainly by the species of implanted ions. Neither ion-implantation induced defects nor surface roughness was found to have major effect on the native oxidation rate.