Influence Of Ion Energy Research Articles

Formation and growth of dislocation loops in ZnTe under irradiation of low energy Ar+-Ions

Abstract Defects produced in ZnTe single crystals by Ar+ bombardment during ion milling for transmission electron microscopy studies are investigated in detail. The defects have been identified to be interstitial type Frank loops. Influences of ion energy and specimen temperature during the irradiation on the defect geometry are investigated. A model is proposed to describe the growing up of the loops.

Influence of ion energy and substrate temperature on the structure of copper, germanium, and zinc films produced by ion plating

Thin films of copper, germanium, and zinc were deposited at an argon pressure of 2.7 Pa (20 mTorr) on cover glass substrates precoated with 10 nm of Au/Pd. The substrate temperatures Ts ranged from 77 to 417 K for zinc, 77 to 543 K for copper, and 77 to 490 K for germanium. The discharge voltage was varied from 900 to 1300 V. Average film thickness was ∼1.5 μm, with deposition rate ∼0.4 μm/min. Ion energies were measured by the retarding field method. Examination of the film structure with a scanning electron microscope (SEM) showed that zones I and T were missing. Structural zone transition temperatures were lower than in the models proposed by Movchan and Demchishin, and Thornton. All copper and zinc films were polycrystalline. Germanium, for the above deposition rates, showed an amorphous/poly- crystalline transition, as determined by reflection high-energy electron diffraction, for various ion energy and Ts combinations. Polycrystalline germanium is observed at room temperature for energies above 340 eV. A structural zone model showing the effect of the ion energy and substrate temperature on the film structure for ion plated films is proposed.

AES sputter depth profiling of Cr/Ni multilayers using Ar +, O 2+ and N 2+ ions

As early as 1986 we developed a new model multilayer structure composed of Cr and Ni thin films with a thickness increasing in the direction from the multilayer surface to the smooth Si substrate; the total thickness of Cr/Ni multilayers is 1.1 μm. In this work we report on the investigation of the influence of different ions and ion incidence angles on depth resolution, Δz, of Cr/Ni multilayers up to the depth of 300 nm. The composition and thickness of each alternating thin film up to the depth of Cr/Ni multilayer as mentioned above is given in nanometers: Ni15/Cr25/Ni30/Cr30/Ni50/Cr50/Ni50/Cr50. The samples were sputter depth profiled with Ar +, O 2 + and N 2 +, with an energy of 6 keV and at ion incidence angles of 33°, 52° and 75°, respectively. For all three ion species the best Δz was obtained at ion incidence angle of 75°, which is in good agreement with previous investigations 1.2. For the Ar + ions at 75° the influence of ion energy on Δz was investigated in the range from 3 keV to 9 keV. At the large ion incidence angle of 75°, the influence of ion mass, ion energy and thin film thickness on Δz is reduced. The results are explained in terms of structural changes induced on interfaces during AES depth profiling.

Influence of ion energy, incidence angle and surface roughness on depth resolution in AES sputter profiling of multilayer Cr/Ni thin films

Multilayer Cr/Ni structures consisting of 9 alternating layers of Ni and Cr each about 50 nm thick and a top layer of Ni of 25 nm thickness on smooth and rough Si substrates were studied by AES depth profiling. Results are presented for the dependence of depth resolution on sputter depth between 25 and 425 nm for systematic variations of: (a) Ar + ion energy from 0.5 to 5.0 keV, (b) ion beam incidence angle from 0° to 68°, and (c) sample surface roughness amplitude R a from 0.012 to 2.300 μm. Optimum depth resolution was obtained for multilayer Cr/ni thin film structures on smooth substrates, ion sputtered with a rastered beam of 1 keV Ar + ions at an incidence angle of 68°. The results are discussed in view of existing models for angle dependent sputtering yields, atomic mixing and sputtering induced topographical changes.

Surface Modification of Soda Glass by Recoil Ion Implantation of In2O3.

ABSTRACTRecoil ion implantation of In2O3 into soda glass substrates has been investigated. Increased adhesion results, while the optical and electrical properties are altered. Large energy deposition rates can lead to the reduction of the oxide, thus decreasing visible transmission. Thermal annealing in air results in the recovery of optical and electrical properties. The influence of ion energy and dose on the modification of the glass has been examined.

On the influence of ion energy and incidence angle on Auger depth profiles of binary alloys

Sputter behavior of a binary Ag-16%Pd alloy has been investigated by varying the ion energy between 0.5 and 5 keV and the angle of incidence of the ion beam between 0 and 71°. Results are compared to models describing the transient behavior and the steady state surface enrichment. The variation of the relative sputter yield of the pure metals with energy and angle of incidence and matrix effects of the alloy are taken into account. The effective altered layer thickness increases from 1.6 to 3.4 nm with increasing ion beam energy but is independent of angle of incidence. The experimental steady state peak amplitude ratio of Ag/Pd is slightly lower than that calculated based on the sputter yield of the pure metals.