Influence Of Carrier Recombination Research Articles

Analysis of recombination mechanisms in heterojunction silicon solar cells with rapid thermally annealed thin film emitters

A new family of silicon (Si) wafer heterojunction solar cells fabricated by solid phase crystallization of PECVD amorphous silicon emitters by rapid thermal annealing (RTA) has been analyzed in order to understand the dominant recombination mechanisms. Solar cells fabricated with a broad RTA temperature range of 600–1000 °C were characterized through quantum efficiency, illuminated I–V, and capacitance–voltage measurements. Using the experimental data and theoretical considerations, the influence of carrier recombination in the quasi-neutral and space charge zones as well as at the heterojunction interface were studied. It is established that the carrier recombination in the quasi-neutral base region in the p-type Si substrate predominantly limits the device open circuit voltage. The analysis also showed that the interface recombination velocities at the heterojunction were less than 100 cm s−1. It is also qualitatively established that a post-fabrication forming gas anneal reduces the defect density at the hetero-interface.

On the Photoacoustic Characterization of Semiconductors: Influence of Carrier Recombination on the Thermodiffusion, Thermoelastic and Electronic Strain Signal Generation Mechanisms

A quantitative study of the photoacoustic (PA) signal dependence on the modulation frequency in semiconductors was performed. The carrier recombination processes were taken into account to calculate the PA signal, considering the thermodiffusion (TD), thermoelastic (TE) and electronic strain (ES) signal generation mechanisms. Analytical expressions for these contributions and for the total pressure in the PA gas chamber are given for the heat transmission detection configuration. The theoretical results were compared with measurements in Si samples, showing a good agreement. An anomalous behavior of the PA signal dependence on the modulation frequency can only be explained, if the ES contribution is added to the other ones.

99/03264 Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

99/03264 Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

Influence of carrier recombination in the space charge region on minority carrier lifetime in the base region of solar cells

In this paper the minority carrier lifetime ( τ) in the base region of an n +/p silicon solar cell is calculated. The open circuit voltage decay method is employed. The influence of carrier recombination in the space charge region is considered through an interface recombination velocity, S i. An analytical expression for τ is obtained and its value for one particular case is reported.

Influence of carrier recombination on the pulsed photothermal beam deflection signal in semiconductors

The effect of carrier recombination on the thermal response of pulsed photothermal beam deflection (PBD) signal in Si is analyzed theoretically and experimentally. This effect appears in the form of small depression in PBD - signal time dependence at a depths closer to the thermal diffusion length. The carrier lifetime value is found to be evaluated from this depression time position.