Abstract
A quantitative study of the photoacoustic (PA) signal dependence on the modulation frequency in semiconductors was performed. The carrier recombination processes were taken into account to calculate the PA signal, considering the thermodiffusion (TD), thermoelastic (TE) and electronic strain (ES) signal generation mechanisms. Analytical expressions for these contributions and for the total pressure in the PA gas chamber are given for the heat transmission detection configuration. The theoretical results were compared with measurements in Si samples, showing a good agreement. An anomalous behavior of the PA signal dependence on the modulation frequency can only be explained, if the ES contribution is added to the other ones.
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