Indium Zinc Tin Oxide Research Articles

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

AbstractOxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual‐channel layer and an anodic‐oxide dielectric layer are reported. An ultra‐thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual‐channel layer consists of an oxygen‐uncompensated channel layer and an oxygen‐compensated capping layer. It is confirmed that the dual‐channel structure is effective for enhancing device performance and bias stability in comparison with the single‐channel structure. As a result, the dual‐channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm2 Vs−1, a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec−1, a low‐voltage operation of 1 V, and good operational stability (threshold voltage shift (ΔVTH) < −0.03 V under a negative gate bias stress and ΔVTH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual‐channel layer and an anodic‐oxide gate dielectric layer, have great potential for low‐power, portable, and wearable electronics.

A-ITZO based thin film transistor for ammonia gas sensing: a simulation study

This work is an optimization study by numerical simulation of the performance of amorphous indium tin zinc oxide thin film transistor (a-ITZO TFT) based gas sensor using SILVACO-ATLAS software. The optimization process is focused on the catalytic source/drain electrode, dielectric material and work-function difference. Based on simulation results, when the electrode material is switched from cobalt to molybdenum, the value of drain current was found to be increased from 39 μA to 231 μA. For molybdenum, ruthenium and cobalt with a work function difference of 200 meV, the OFF state current sensitivity (SIOFF) and ON State current sensitivity (SION) values were found to be 607.27 and 213.2, 102.81 and 0.35 and 0.015 and 0.90 respectively. An increase in the sensitivity of simulated structure was observed with the value of work function difference that indicates an increase in the concentration of gas. The impact of the dielectric material also reveals that high-k dielectric materials boost the sensitivity of the proposed device. The simulation results confirm the a-ITZO TFTs potential in gas sensing applications.

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Maintaining gate bias stability under negative bias stress (NBS) and positive bias stress (PBS) is a long-standing issue in amorphous oxide semiconductor thin-film transistors (TFTs). The passivation of the channel layer is crucial for improving device stability. We show that amorphous gallium oxide, which possesses appropriate energy levels (lower electron affinity and higher ionization potential) for indium–tin–zinc oxide (ITZO) TFTs, can be etched selectively by tetramethyl ammonium hydroxide-containing developers that enable self-alignment passivation, such as easy contact hole formation during the drain and source lithography processes. The self-aligned passivation process led to a-ITZO TFTs with high mobility (>50 cm2 V−1 s−1) and low subthreshold swing (<90 mV/dec). The threshold voltage shifts under NBS and PBS using a bias gate voltage of ±20 V for 1 h were −0.09 and 0.15 V, respectively. This passivation can obviate the need for the conventional CVD-derived passivation process by utilizing the DC sputtering of gallium oxide, which may reduce hydrogen issues.

Improved mechanical stability of indium zinc tin oxide based flexible transparent electrode through interlayer treatment

AbstractDue to the significant growth of the market for numerous flexible electronic devices, demand for mechanically stable indium zinc tin oxide (IZTO) based flexible transparent electrodes has recently expanded substantially. So, we have attempted to increase the mechanical stability of an IZTO based flexible transparent electrode by forming an ultrathin interlayer of an organic semiconductor polystyrene sulfonate doped polyaniline (PANI:PSS). According to the results of the systematic investigation, the PANI:PSS treated IZTO film can preserve 97.50% of its initial average transmittance (AVT) value (83.07%) after 20,000 bending cycles, but the bare IZTO film can retain only 89.00% of its initial AVT value (86.40%) after the same treatment. Furthermore, the PANI:PSS treatment has benefited in the reduction of IZTO film sheet resistance from 17.38 to 16.91 Ω/sq. Scanning electron microscopy images have indicated that the presence of a PANI:PSS interlayer on the IZTO film prevents the formation of fractures on the inorganic IZTO layer when mechanical stress is applied.

(Invited) Approach to Oxide Tfts with High Mobility & Stability

Thin film transistors (TFTs) with the channel of amorphous oxide semiconductors (AOSs) represented by amorphous Indium-Gallium-Zinc Oxide (a-IGZO) are now applied to drive pixels of the state-of the art display based on high mobility, good homogeneity, easy fabrication and optical transparency [1]. Recently, larger mobility TFTs are highly demanded for emerging applications such as ultra-high vision and memories. However, there is a critical obstacle to be overcome, i.e., an empirical trade-off rule in oxide TFTs between mobility and stability. Higher mobility TFTs possess less stability to various types of stress (negative bias-thermal stress instability, NBTS, positive bias-thermal stress instability, PBTS, and negative bias-illumination stress instability, NBIS). The Elucidation of origin for this trade-off rule and new approach are required to realize high mobility and high stability TFTs. We clarify that the origin of this trade-off through comparison in TFTs between IGZO with low mobility and high stability and ITZO with high mobility and low stability. A critical phenomenon was noted during the conventional TFT fabrication; CO-related impurity donates electrons to Indium-Tin-Zinc Oxide (ITZO) with high mobility under the negative bias stress condition but such CO-related impurity effect is negligible in IGZO with lower mobility than ITZO [2]. This finding may be understood by considering that large difference in ECBM determines the transfer of electron generated by adsorbed CO-related species on the back surface of ITZO [3]. Based on this model and this finding, we successfully fabricated the most stable ITZO TFT with a high mobility of 70 cm2/Vs by eliminating CO-related impurity and further passivation; NBTS (-20V, 60 oC, 3600 s, ΔVth: -0.02 V), PBTS (+20 V, 60 oC, 3600 s, ΔVth: 0.12 V) and NBIS (-20V, 15000 lx, 3600s, ΔVth: -1.33 V).[1] Hosono, H., & Kumomi,K., (ed), Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory (Wiley, 2022); Hosono, H. (2018). How we made the IGZO transistor. Nature Electronics, 1(7), 428-428.[2]Shiah, Y. S., Sim, K., Ueda, S., Kim, J., & Hosono, H. (2021). Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs. IEEE Electron Device Letters, 42(9), 1319-1322.[3] Shiah, Y. S., Sim, K., Shi, Y., Abe, K., Ueda, S., Sasase, M., Kim,J., & Hosono, H. (2021). Mobility–stability trade-off in oxide thin-film transistors. Nature Electronics, 4(11), 800-807.

Transparent Conductive Oxide Materials for Bifacial Heterojunction Back Contact Solar Cells

We assessed the performance of transparent conductive oxide (TCO) materials for use in the heterojunction back contact + (HBC+) solar cell. In addition to indium tin oxide (ITO), titanium dioxide (TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) and zinc oxide (ZnO) were evaluated as possible materials for the rear side of HBC+ solar cells. The results showed that the different optical and electrical parameters of the TCO materials affect the cell performance differently. Of the TCO materials that were assessed, the HBC+ cell with TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> delivered the best performance by increasing the power density by approximately 0.5 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (relative to our previous evaluation) under bifacial illumination conditions. The optical properties of the TCO materials were revealed to have the greatest effect on the cell performance, particularly on the rear-side performance. The optimal size of the rear metal area is affected by the properties of the TCO material, mainly by the resistive components, and an increase in the temperature does not affect the selection of the best TCO material.

Organic photoconductive film–stacked active pixel sensor pixel circuits using indium–tin–zinc-oxide thin-film transistors

In this study, we describe the signal readout capabilities of indium–tin–zinc-oxide (ITZO) thin-film transistor (TFT)-based active pixel sensor (APS) pixel circuits combined with organic photoconductive films (OPFs). A pixel circuit was fabricated with a size of 50 μm containing three ITZO TFTs having a channel length of 2 μm and a blue-sensitive OPF possessing excellent properties with an external quantum efficiency of ∼59% and a dark current density of <100 pA cm−2. Signal readout operation of the pixel circuits in accordance with irradiated light intensity was demonstrated, and sufficient response speeds within the line selection period, assuming a pixel number of 320 × 240 (QVGA) at 60 frames per second (∼69.4 μs), was also confirmed by fabricating pixel line arrays comprising 320 and 240 pixels. Our findings show that the miniaturized ITZO TFTs have potential for use in high-pixel-density TFT-based APS image sensors with improved imaging quality.

In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric

Indium zinc tin oxide (IZTO) semiconducting thin films have been investigated as active channel layers for thin-film transistor (TFT) applications. The IZTO layer was deposited by radio frequency magnetron sputtering (RF-MS) using a sintered IZTO ceramic target with an In:Zn:Sn metal atomic ratio of 40:50:10 on the HfO2 layer either deposited using an atomic layer deposition (ALD) or RF-MS. The annealing treatments after IZTO and HfO2 film depositions were performed in air using a tube furnace and in an oxygen atmosphere using rapid thermal annealing at 400 °C, respectively. Optical transparency measured by UV-Vis spectroscopy showed that the HfO2 films deposited by either RF-MS or ALD were transparent in the visible region and had a similar band gap energy of about 4.9 eV. Electrical characteristics of IZTO based TFT were comparatively evaluated for the samples with IZTO/ALD or RF-MS HfO2/n++-Si structure. The IZTO TFT sample with 60 nm-thick HfO2 deposited by ALD had an on/off current ratio value of 7.0 × 106 and a field-effect mobility value of 6.2 cm2/Vs, which was superior to that with RF-MS deposited HfO2.

Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control

Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control

Analog/RF Performance Analysis of a-ITZO Thin Film Transistor

This work reports RF and analog performance analysis of an amorphous Indium Tin Zinc Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT like drain current, drain conductance, output resistance, transconductance, transconductance generation factor, early voltage, intrinsic gain, capacitances, cut off frequency, maximum frequency of oscillation, transconductance frequency product, gain frequency product, gain bandwidth product and gain transconductance frequency product have been closely examined. The device is further analyzed to investigate the impact of variation in physical parameters viz. dielectric material, dielectric thickness (𝐷𝑡) and temperature (T) on the RF/Analog performance. Use of high-k dielectric material in the simulated structure has resulted in low subthreshold slope (SS) of 0.62 V/decade, On voltage (𝑉𝑜𝑛) of - 0.29 V, 𝐼𝑜𝑛/𝐼𝑜𝑓𝑓 ratio of ~ 109, intrinsic gain (Av) of 104.5 dB and gain frequency product (GFP) of 1.86 GHz. The best results for dielectric thickness variation are obtained for Dt of 150 nm with SS of 0.22 V/decade, 𝑉𝑜𝑛 of -0.26 V, 𝐼𝑜𝑛/𝐼𝑜𝑓𝑓 of ~ 1010, Av of 175.69 dB and GFP of 2.39 GHz. In order to investigate device thermal reliability and stability, temperature analysis has also been done. To demonstrate the circuit level implementation of the simulated structure, a resistive load inverter circuit is simulated and analyzed for different variations (high-k, 𝐷𝑡 and T). It has also been concluded that TFT with high-k material or thinner dielectric at T=300 K provides best performance. This analysis confirms the potential of a-ITZO TFTs to realize high performance analog/RF circuits.

Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stress

In this paper, we fabricate a back channel etched structure thin film transistor (TFT) pixel array with hafnium-aluminum oxide dielectric and indium-zinc-tin-oxide (IZTO) semiconductor using a solution process. The electrical characteristics of IZTO TFT are modified by N&lt;sub&gt;2&lt;/sub&gt;O plasma treatment. In comparison with the subthreshold swing and saturation mobility of the device untreated by plasma , the subthreshold swing decreases from 204 to 137 mV·dec&lt;sup&gt;–1&lt;/sup&gt;, and the saturation mobility increases from 29.12 to 51.52 cm&lt;sup&gt;2&lt;/sup&gt;·V&lt;sup&gt;–1&lt;/sup&gt;·s&lt;sup&gt;–1&lt;/sup&gt;. Improvement in the mobility and the subthreshold swing (SS) demonstrate that interface states may be passivated by reactive O radicals that are generated by N&lt;sub&gt;2&lt;/sub&gt;O plasma, which is confirmed by the result of X-ray photoelectron spectrum analysis. In addition, the stability of negative bias illumination stress (NBIS) shift is only 0.1V for 3600 s with an illumination intensity of 10000 lux. This result indicates that its superior stability meets the requirements for the display driver. Therefore, N&lt;sub&gt;2&lt;/sub&gt;O plasma treatment is verified to be an effective method to improve device performance and light stability for IZTO TFT pixel array.

Effect of N &lt;sub&gt;2&lt;/sub&gt;O treatment on performance of back channel etched metal oxide thin film transistors

In this paper, the rare earth element praseodymium-doped indium tin zinc oxide semiconductor is used as the channel layer of the thin film transistor, and the aluminum oxide-based wet back channel etched thin film transistor is successfully prepared. The effect of N &lt;sub&gt;2&lt;/sub&gt;O plasma treatment on the back-channel interface of thin film transistor is studied, and the effect of treatment power and time on device performance are studied in detail. The results show that the good device performance can be obtained under certain power and time treatment, and the prepared device has good thermal stability of positive bias and negative bias under light conditions. The results from high-resolution transmission electron microscopy show that the amorphous structure of the metal oxide semiconductor material can effectively resist the wet etchant, and that no obvious component segregation phenomenon is found. Further, X-ray photoelectric spectroscopy tests show that N &lt;sub&gt;2&lt;/sub&gt;O plasma treatment can form an oxygen-rich, low-carrier-concentration interface layer at the interface. On the one hand, it can effectively resist the damage of the back channel caused by the plasma of plasma enhanced chemical vapor deposition (PECVD), and on the other hand, it acts as a passivation body of hydrogen from PECVD plasma, suppressing the generation of low-level donor state of hydrogen. This study provides an important reference for low-cost, high-efficiency thin film transistor performance optimization methods.

Highly stable Ba-addition InZnSnO channels of light emitting transistors and thin film transistors

In this study, we investigate the characteristics of barium-addition indium-zinc-tin-oxide (B–IZTO) channels fabricated by the co-sputtering of barium-tin-oxide and indium-zinc-tin-oxide (IZTO) targets for the operation of thin film transistors (TFTs) and light emitting transistors (LETs). The X-ray photoelectron spectroscopy (XPS) analysis verifies that increasing the BaSnO3 sputtering power significantly decreases the concentration of oxygen vacancy from 35.0% to 16.3%. In addition, increasing the Ba concentration in the B–IZTO films increases the average transmittance of the B–IZTO channel in the visible light region (400–800 nm) from 86.7% to 88.3%, and the electrical resistivity from 84.3 to 5408 Ω∙cm, respectively. We find that the appropriate composition of Ba in the IZTO channels greatly improves the subthreshold swing (SS), the stability against the negative bias illumination stress (NBIS) of the B–IZTO channels-based TFTs. As the Ba content of the IZTO channel layer increases, SS decreases from 0.49 to 0.13 V/decade and the threshold voltage shift (ΔVTH) by NBIS reduces from − 13.1 to − 5.07 V, respectively. In the case of the B–IZTO-based LET with the highest Ba content, the device has the lowest light turn on voltage (VON) of 1.84 V, and shows the maximum brightness of 1.53 × 104 cd/m2. In this study, we confirm that the addition of Ba in the IZTO effectively suppresses the oxygen vacancies in the IZTO channel, resulting in the enhanced stability of the B–IZTO-based TFTs, and improves the performance of the B–IZTO-based LETs.

Highly Reliable Implementation of Optimized Multicomponent Oxide Systems Enabled by Machine Learning-Based Synthetic Protocol.

Multicomponent oxide systems are one of the essential building blocks in a broad range of electronic devices. However, due to the complex physical correlation between the cation components and their relations with the system, finding an optimal combination for desired physical and/or chemical properties requires an exhaustive experimental procedure. Here, a machine learning (ML)-based synthetic approach is proposed to explore the optimal combination conditions in a ternary cationic compound indium-zinc-tin oxide (IZTO) semiconductor exhibiting high carrier mobility. In particular, by using support vector regression algorithm with radial basis function kernel, highly accurate mobility prediction can be achieved for multicomponent IZTO semiconductor with a sufficiently small number of train datasets (15-20 data points). With a synergetic combination of solution-based synthetic route for IZTO fabrication enabling a facile control of the composition ratio and tailored ML process for multicomponent system, the prediction of high-performance IZTO thin-film transistors is possible with expected field-effect mobility as high as 13.06 cm2 V-1 s-1 at the In:Zn:Sn ratio of 63:27:10. The ML prediction is successfully translated into the empirical analysis with high accuracy, validating the protocol is reliable and a promising approach to accelerate the optimization process for multicomponent oxide systems.

Ultra-Flexible Organic Photovoltaics with Low-Temperature Deposited IZTO on a Cyclic Polymer Substrate Having Excellent Mechanical Properties.

In this study, ultra-flexible organic photovoltaics (OPVs) with a new device structure are developed as a power source for ultra-flexible wearable devices with excellent biocompatibility. To fabricate ultra-flexible OPVs with excellent mechanical properties, we develop an ultra-flexible substrate with a bilayer structure based on polymers and transparent conducting oxides. An amorphous perfluorinated polymer (cyclic transparent optical polymer, CYTOP) is introduced as an ultra-flexible substrate by a solution process. An indium zinc tin oxide (IZTO) transparent electrode possessing an amorphous structure is fabricated via pulsed DC magnetron sputtering at room temperature using a target containing 80 atom % In2O3-10 atom % ZnO-10 atom % SnO2. Ultra-flexible OPVs with a one-dimensional (1D) grating pattern are fabricated on the buffer layer and photoactive layer. These OPVs exhibit an increase of 12% in power conversion efficiency (PCE) (maximum PCE: 8.52%) compared to the reference, thereby minimizing reliance on the incident angle of light. In addition, even after 1000 compression/relaxation tests with a compression strain of 33%, the PCE of the ultra-flexible OPVs is maintained up to 94.8% of its initial value.

Ultra-Flexible Organic Solar Cell Based on Indium-Zinc-Tin Oxide Transparent Electrode for Power Source of Wearable Devices.

We have developed a novel structure of ultra-flexible organic photovoltaics (UFOPVs) for application as a power source for wearable devices with excellent biocompatibility and flexibility. Parylene was applied as an ultra-flexible substrate through chemical vapor deposition. Indium-zinc-tin oxide (IZTO) thin film was used as a transparent electrode. The sputtering target composed of 70 at.% In2O3-15 at.% ZnO-15 at.% SnO2 was used. It was fabricated at room temperature, using pulsed DC magnetron sputtering, with an amorphous structure. UFOPVs, in which a 1D grating pattern was introduced into the hole-transport and photoactive layers were fabricated, showed a 13.6% improvement (maximum power conversion efficiency (PCE): 8.35%) compared to the reference device, thereby minimizing reliance on the incident angle of the light. In addition, after 1000 compression/relaxation tests with a compression strain of 33%, the PCE of the UFOPVs maintained a maximum of 93.3% of their initial value.

Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer

In this research, we investigated optical properties of amorphous Phosphorus-doped Indium–Zinc–Tin-Oxide (a-IZTO:P) thin films and their feasibility as the channel layer for thin film transistors (TFTs). The a-IZTO:P TFT with bottom-gate top-contact structure was prepared on silicon substrates by radio frequency (RF) magnetron sputtering at room temperature. After annealing in air at 350 °C, the IZTO:P films kept amorphous and showed good optical transmittance of over 80% within the visible range. The a-IZTO:P TFT operated in enhancement-mode and exhibited promising electrical performance with saturation mobility (μSAT) of 34.6 cm2/V∙s, threshold voltage (VTH) of 0.8 V, subthreshold swing (SS) of 0.53 V/decade and on/off current ratio (ION/IOFF) of 4.88 × 108. In addition, the stability of a-IZTO:P TFTs was also investigated.

Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices.

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from Tbleaching (90.01%) to Tcoloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO3/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO4/perchlorate (LiClO4/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time tc of 21.01 s and a coloration time tb of 4.7 s with varying potential from −1.3 V (coloration potential, Vc) to 0.3 V (bleaching potential, Vb).

Active pixel sensor readout circuit using indium–tin–zinc-oxide thin-film transistors for image sensor applications

In this study, we describe an active pixel sensor (APS) readout circuit using indium–tin–zinc-oxide (ITZO) thin-film transistors (TFTs). The APS readout circuit with a pixel size of 90 μm was fabricated using ITZO TFTs with a channel length of 2 μm, and its performance was experimentally evaluated. The ITZO TFTs were found to have good low-frequency noise performance with an extracted Hooge’s parameter (α H) of 3.5 × 10−3, and the APS exhibits a high DC voltage gain of ∼0.81 with satisfactory linearity in a wide output voltage range of ∼6.4 V as well as manageable response times of less than 15 μs. The obtained results show the potential of our APS circuits to be applied to TFT-based image sensors with enhanced image quality.

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

AbstractThe Hf‐doped indium zinc tin oxide (Hf:InZnSnO) channel for high performance and stable transparent thin film transistors (TFTs) is developed by using a simultaneous cosputtering of InZnSnO and HfO2 targets. The effects of In and Hf composition in Hf:InZnSnO channel on the performance and stability under bias stress for the Hf:InZnSnO channel‐based TFTs are investigated. Herein, the In cations enhance the electrical properties, while the Hf cations reduce the oxygen vacancies in the Hf:InZnSnO channel layer. Adjusting the atomic ratio of In of the InZnSnO target improves the performance of the Hf:InZnSnO‐based TFTs, while introducing an adequate amount of HfO2 improves the bias stabilities and hysteresis characteristics of the Hf:InZnSnO‐based TFTs. The transparent TFT with optimized Hf:InZnSnO channel, with a stoichiometry of Hf0.27In25.96Zn6.99Sn6.16O60.62, that is cosputtered at RF power of 100 W applied to InZnSnO target (In:Zn:Sn = 4:1:1 at%), and RF power of 50 W applied to HfO2 target exhibits a field effect mobility of 11.84 cm2 V−1 s−1 and low shift of threshold voltage of less than 2.5 V under bias stress for 3000 s. The high performance and stability of the Hf:InZnSnO channel‐based TFTs demonstrate the feasibility of transparent TFTs‐related next‐generation display applications.