Metal oxide play very important role in the field of semiconductors. Metals have high reflectivity for the light radiation in the range of infrared and visible range and low reflectivity in the ultraviolet and higher frequency range. Indium oxide thin films were successfully deposited by the sol gel dip coating method. The envelope method was used to evaluate the optical parameters and thickness. Resistivity, mobility and carrier concentration were obtained from Hall measurements. The dispersion energy was obtained from the single effective oscillator model. The energy band gap values estimated from Tauc’s plot and the static refractive index estimated from the Cauchy’s curve fitting agree well with single effective oscillator model. Optical characteristics of materials are determined by the interaction of the electromagnetic radiation with the valence electron of the materials which lies within or near visible range of electromagnetic spectrum. The other optical parameters like optical conductivity and the dielectric constants were also evaluated.
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