Abstract
A new class of amorphous oxide semiconductors based on InOx doped with Ti, W or Si seems to show great promise for large area, flexible, electronics. Of particular interest is the In2O3:SiO2 system as it has a relatively large bond dissociation energy, hence highly suited for long-term environmental stability. In this paper, we present a sub-200°C fully photolithographically-processed indium oxide thin film transistor that is fully compatible to circuit integration on plastic substrates. The TFTs typically showed a mobility of 5 cm2/Vs, a threshold voltage of −0.16 V and a subthreshold swing of 312 mV/dec. We report on its stability behavior when subject to electrical bias stress and negative bias illumination stress, along with a pulse-based compensation solution for persistent photoconductivity arising from the latter. Following static characterization and subsequent parameter extraction of the indium silicon oxide TFT, design considerations are presented along with measurement results of a fully integrated TFT voltage amplifier with high impedance subthreshold loading.
Highlights
Amorphous oxide semiconductors (AOS) are attractive in view of their large bandgap energy which gives rise to optical transparency, and more importantly, this family of materials can be layered on a wide range of substrates, including plastic or paper, in view of their low temperature attributes
We present ISO thin film transistors (TFTs) fabricated using an all-photolithographic process at a maximum temperature of 200°C, in which the ISO is deposited by DC sputtering and the dielectric layers by atomic layer deposition
The drain current was reset to its dark current value, which indicates that a positive gate bias could accelerate recovery, effectively suppressing the persistent photoconductivity in the ISO film, enabling ISO-TFTs to be deployed in relatively high frame rate active matrix architectures
Summary
Amorphous oxide semiconductors (AOS) are attractive in view of their large bandgap energy which gives rise to optical transparency, and more importantly, this family of materials can be layered on a wide range of substrates, including plastic or paper, in view of their low temperature attributes. In the family of amorphous oxide semiconductors, the amorphous indium oxide group shows great promise as high performance materials These include InOx, IGZO, InSnO, InAlO, and. Shinya et al [9] and Kizu et al [10] reported a new class of materials based InOx doped with Ti, W or Si. Of particular interest is In2O3:SiO2 (ISO) [11] in view of the relatively large bond dissociation energy of Si-O, which constitutes an important requirement for environmentally stable TFTs. The silicon cations in the ISO film suppress the instability originating from the oxygen vacancy-related defects in conventional metal oxides.
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