Indium Nitrate Research Articles

Application of layered Nickel/Indium double hydroxide in the highly efficient removal of crystal violet dye from textile effluent

Worldwide freshwater demand will soon exceed supply if measures are not taken to mitigate inadequate wastewater treatment and its indiscriminate release into the environment. The textile industry is one of the largest consumers of freshwater and the third largest contributor to clean water pollution. Conventional treatment of textile effluent is inadequate and expensive. Adsorbent materials obtained from discarded solid waste precursors that contain high amounts of valuable metals can be an inexpensive way to obtain a highly efficient and low-cost wastewater treatment process. This study developed and explored a highly efficient adsorbent layered double hydroxide of Nickel and Indium (Ni/In-LDH) for the adsorption of widely used textile cationic dye, crystal violet (CV). The adsorbent material was synthesized by co-precipitation process of indium nitrate and nickel nitrate. The adsorbent material morphology and its adsorption capacity were investigated in different studies, such as the influence of pH, dosage, kinetics, isotherms, thermodynamics, ionic strength, adsorbent regeneration capacity, and interaction mechanisms of adsorption. Optimal operating conditions for Ni/In-LDH adsorption revealed maximum adsorption capacity Qmax of 570.94 mg g−1 at starting pH 8 and 60°C, which maintained approximately 75 % of the initial adsorption capacity in three successive adsorption/regeneration cycles. The experimental data fitted Pseudo first order kinetic model (PFO) and the Liu isothermal adsorption model. Thermodynamic studies indicated a spontaneous endothermic adsorption process, and a mechanism of physisorption of CV onto Ni/In-LDH substrate. After FTIR analysis of CV loaded Ni-In/LDH, electrostatic, hydrogen bonding, and n-π bonding interactions were suggested as the interaction mechanisms of adsorption. The Ni/In-LDH demonstrated excellent performance in the removal of CV dye in aqueous solutions compared to other high performing adsorbents.

Fabrication of chrysanthemums like TiO2@In2S3 S-scheme heterojunction nanostructures for the degradation of methylene blue dye present in aqueous solution

Removal of contaminants from water and wastewater has drawn interest from all over the world because of its enormous impact on the environment as well as the potential threat to human and other biological existence. As a result, the primary objective for humans is to have consistent access to upgraded and clean water sources. In this study, thioacetamide, titanium dioxide, and Indium (III) nitrate n-hydrate were used in the hydrothermal process to produce TiO2@In2S3 hybrid material. The high purity of the TiO2@In2S3 hybrid materials was shown by XRD analysis, UV-DRS has been utilized to study the optical properties of TiO2@In2S3 hybrid materials and the In2S3 sample which reveals that they have a band gap between 1.71 and 1.88 eV. The stoichiometry of the hybrid materials TiO2@In2S3 was confirmed by EDX analysis. Additionally, SEM examination displayed the TiO2@In2S3 hybrid materials’ chrysanthemums morphology. The produced TiO2@In2S3 hybrid materials exhibit complete degradation of MB dye pollutants within 60 min under an LED lamp. The photocatalytic decomposition of MB dye with TiO2, β-In2S3 and TiO2@In2S3 follows a pseudo-first-order process with rate constants of 2.88 × 10−3, 4.67 × 10−3, and 7.73 × 10−2 min−1, respectively. TiO2 and β-In2S3 composites had a synergistic impact, and an appropriate S-scheme charge carrier mechanism was suggested, validating the composite as an economical and effective catalyst for environmental remediation.

Gas-Phase Photocatalytic Coprocessing of CO2 - H2O(v) to Energy Products Promoted by the n,n-Junction In2O3@g-C3N4 under VIS-Light.

Carbon dioxide capture and utilization is a strategic technology for moving away from fossil-C. The conversion of CO2 into fuels demands energy and hydrogen that cannot be sourced from fossil-C. Co-processing of CO2 and water under solar irradiation will have a key role in the long-term for carbon-recycling and energy products production. This article discusses the synthesis, characterization and application of the two-phase composite photocatalyst, In2O3@g-C3N4, formed by thermal condensation of melamine in the presence of indium(III)nitrate. The composite exhibits a n,n-heterojunction between two n-type semiconductors, g-C3N4 and In2O3, leading to a more efficient charge separation. The composite has a flat band potential enabling it to effectively catalyze the reduction of CO2 in the gas phase to produce CO, CH4 and CH3OH. While the composite's overall photocatalytic efficiency is comparable to that of neat g-C3N4, its ability to promote multielectron-transfer and Proton Coupled to Electron Transfer (PCET) suggests that there is a potential for further optimization of its properties. The use of labelled 13CO2 has allowed us to clearly exclude that the reduced species are derived from the photocatalyst decomposition or the degradation of contaminants.

The impact of indium and manganese modifiers on the catalytic properties of zinc-alumina propane dehydrogenation catalysts

Supported zinc-containing catalysts are considered as a viable alternative to the currently-deployed Cr-based (toxic) and Pt-based (costly) catalysts of alkane dehydrogenation, as reflected also in the increased number of reports related to the Zn-based catalysts in recent years. Here, we present a study of alumina-supported Zn-In and Zn-Mn propane dehydrogenation (PDH) catalysts prepared by the tailored methods. Specifically, the introduction of zinc relied on the chemical vapor deposition (CVD, using Zn vapor) onto alumina or alumina-supported indium or manganese materials, the latter two prepared by the impregnation of alumina with aqueous solutions of the respective metal nitrates followed by the calcination and hydrogen treatment. Alternatively, both zinc and indium were introduced by the co-impregnation of alumina with aqueous zinc and indium nitrates. The PDH tests revealed that the “dilution” of the active Zn2+ surface sites with In+ cations lead to a significant improvement in the catalytic performance, i.e., the introduction of In+ increased propene selectivity and attenuated the undesirable cracking and hydrogenolysis side reactions as well as decreased coke formation. In contrast, Mn2+ cations improved the catalytic properties of Zn2+ surface sites to a lesser extent than In+ cations. All prepared catalysts were characterized by DRIFT (diffuse reflectance infrared Fourier transform) spectroscopy of the adsorbed CO and H2 probe molecules. It was found that surface In+ and Mn2+ cations affect Zn2+ sites (electronic and geometric effect), which can be assessed from the position of the IR bands of zinc hydridespecies, formed due to the heterolytic hydrogen dissociation on the Zn2+ active sites. The effect of In and Mn dopants also was confirmed by the molecular DFT simulation.

Construction of Indium(III)-Organic Framework Based on a Flexible Cyclotriphosphazene-Derived Hexacarboxylate as a Reusable Green Catalyst for the Synthesis of Bioactive Aza-Heterocycles.

The constant demand for eco-friendly methods of synthesizing complex organic compounds inspired researchers to design and develop modern, highly efficient heterogeneous catalytic systems. Herein, In-HCPCP metal-organic framework (SRMIST-1), a heterogeneous Lewis acid catalyst containing less toxic indium and eco-friendly robust cyclotriphosphazene and exhibiting notable chemical and thermal stability, durable catalytic activity, and exceptional reusability was produced through the reaction between indium(III) nitrate hydrate and hexakis(4-carboxylatophenoxy)-cyclotriphosphazene. In the SRMIST-1 structure, secondary building units {InO7} are assembled by a connection of η2- and η1-carboxylic oxo atoms from different HCPCP ligands, forming a three-dimensional network. The occurrence of regularly distributed In(III) sites in SRMIST-1 confers superior reactivity on the catalyst toward the synthesis of 2,3-dihydroquinazolin-4(1H)-ones and 3,4-dihydro-2H-1,2,4-benzothiadiazine-1,1-dioxides by the cyclization reaction of 2-aminobenzamides and 2-aminobenzenesulphonamides with aldehydes under optimized reaction conditions, respectively. The notable features of this method include broad functional group compatibility, low catalyst loading (1-5 mol %), mild reaction conditions, easy workup procedures, good to excellent reaction yields, ethanol as a green solvent, reusability of the catalyst (five cycles), and economic attractiveness, which is mainly due to sustainability of SRMIST-1 as a reusable green catalyst. Our findings demonstrate that the highly reactive and reusable green catalyst finds widespread applications in medicinal chemistry.

High bias stability of Hf-doping-modulated indium oxide thin-film transistors

Device stability is one of the key parameters for transistor applications. To improve the stability of Indium oxide (In2O3) after a long-time gate bias, a synthetic solution of hafnium chloride (HfCl4) and indium nitrate (In(NO3)3∙xH2O) reagents were used to obtain 0% to 5-at.% Hf doped In2O3 thin-film transistors. With the increase of Hf doping concentration, oxygen vacancies and residual hydroxyl groups continue to decrease, suppressing the carrier concentration and influencing the trap state density of In2O3. The sub-threshold slope (SS) 0.78 V·dec−1 for the undoped In2O3 transistor in this work is a typical value. When the dopant dose is up to 5-at.%, SS decreases to 0.32 V·dec−1. According to the proportional relationship between SS and the density of trap states, it shows that the density of trap states in the dielectric layer and the semiconductor/dielectric interface SS is greatly reduced after 5-at.% Hf doping. The probability of the charge being trapped is dropped as well. At the same time, under the doping of Hf, the transistor exhibits a very small threshold voltage shift. Especially at the dopant dose of 5-at.%, the transfer characteristic curve hardly shifts. This work demonstrates an In2O3 transistor with high bias stability by doping method.

Indium nitrate hydrate films as potential EUV resists: film formation, characterization, and solubility switch assessment using a 92-eV electron beam

Indium nitrate hydrate films as potential EUV resists: film formation, characterization, and solubility switch assessment using a 92-eV electron beam

Ultrafast and broadband photodetection based on selenized AgSbS2 thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Broadband AgSbS2(Se) photodetectors are fabricated using spray pyrolysis with a post-selenization process. Indium nitrate is introduced to break the surface blockade to selenidation, largely enhancing the light response range and photocurrent.

Characterization of an unanticipated indium-sulfur metallocycle complex.

We have produced a novel indium-based metallocycle complex (In-MeSH), which we initially observed as an unanticipated side-product in metal-organic framework (MOF) syntheses. The serendipitously synthesized metallocycle forms via the acid-catalysed decomposition of dimethyl sulfoxide (DMSO) during solvothermal reactions in the presence of indium nitrate, dimethylformamide and nitric acid. A search through the Cambridge Structural Database revealed isostructural zinc, ruthenium and palladium metallocycle complexes formed by other routes. The ruthenium analogue is catalytically active and the In-MeSH structure similarly displays accessible open metal sites around the outside of the ring. Furthermore, this study also gives access to the relatively uncommon oxidation state of In(II), the targeted synthesis of which can be challenging. In(II) complexes have been reported as having potentially important applications in areas such as catalytic water splitting.

Gallium indium nitrate doped PbS and MoS2 with ligands based photovoltaic cell structure for enhanced efficiency incorporating transformer based module with hydro Ferron chloride thermal sub cell cooling system

AbstractA solar photovoltaic cell that is efficient and produces more power while taking up less area by absorbing high‐light energy. To improve the efficiency of the photovoltaic cell (PV), recombination technique is used in the absorption layers of the solar cell. The existing recombination techniques developed by the absorbers have weak interconnectivity, which may leads to defects, and efficiency is reduced due to the high resistance in diffusion length. So, “GNI‐doped PbS and MoS2 with ligands‐based PV structure” is proposed to improve the interconnection between the layers of the Solar cell. Here, gallium nitride (GaN) and indium nitride (InN) act as anode and cathode in first and third layer, to get the better interconnection by interchanging oxide ions where the Gallium Indium nitrate used as semiconductor. To improve the durability, second layer is doped with Bi3+ with Fe3+, which has a rhombohedral perovskite structure. Molybdenum di‐Sulfide (MoS2) is used in the last layer to improve light absorption. To maintain surface passivation, transformer‐based PV module with an HFC Thermal sub cell is employed in which Hydro Ferron chloride combined with Nano graphene platelets is to avoid Potential Induced Degradation and transformers to eliminate the stray current. While implementing, with very low cost the power conversion efficiency of proposed design increased upto 17%.

Effect of the thickness and surface interface of In2O3 films on the transport and recombination of charges in a polymer solar cell

Indium oxide films were obtained by spin coating from a solution of indium nitrate in ethylene glycol followed by annealing at 300 °C. The influence of the thickness and surface interface of In2O3 films on the optical and photo-electrophysical properties of a polymer solar cell has been studied. It is shown that the surface roughness of the film gradually decreases with a decrease in the thickness of the film to 60 nm, and a further decrease in the thickness of the films leads to its increase. The absorption spectra of the films were measured. The values of the optical band gap width are determined. It was found that with a decrease in the thickness of the films, the width of the forbidden zone (Eg) also decreases. It was found that the parameters of the current-voltage characteristics (VAC) and electrophysical measurements also depend on the thickness and interface of the surface of the In2O3 films. It was found that with an In2O3 film thickness equal to 60 nm, a maximum efficiency value of 3.42 % is observed, at the same time, electrons in the photoactive layer have a maximum charge carrier lifetime and a low recombination rate

Indium Doped ZnO Thin Film Using Spin Coating for TCO Application

Indium doped zinc oxide (IZO) thin films were fabricated on glass substrates by spin coating technique for transparent conducting oxide (TCO) application. Effect of different indium concentration on their properties were investigated. IZO thin films were deposited on glass substrate using sol-gel spin coating techniques using zinc acetate dihydrate, indium nitrate hydrate, absolute ethanol, and monoethanolamine (MEA). The concentration of indium was varied at 1, 3, 4, and 5 at.%. to study the characteristics of the IZO thin films in terms of structural, optical, and electrical, which is to achieve high visibility of IZO as transparent conducting oxide. The UV-Vis examination of IZO thin film observed that the highest transparency of thin films was IZO with indium concentration of 4% which shows a75.6%. The optical band gap were calculated using Tauc’s plot and was found to be in the range between 3.10 to 3.2 eV. For electrical properties, the lowest resistivity was observed for IZO thin film at 4% doping concentration with a value of 3.25 Ωcm, while the highest resistivity was observed at IZO thin film at 1% which is 15.26 Ωcm.

СИНТЕЗ И ФОТОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА НАНОНИТЕЙ ИНДИЙ-ЦИНК ОКСИДА

Three options for the indium-zinc oxide nanofiberssynthesis by electrospinning and the results of measuring the nanofiberssensitivity to ultraviolet irradiation in the wavelength range of 230–290 nm are presented. It has been shown that nanofibers prepared from dihydrous zinc acetate with the addition of indium nitrate at a ratio of In : Zn = 1 : 1 have the highest sensitivity.

Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode

The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated through spray pyrolysis deposition at 450 °C with aqueous solutions containing magnesium nitrate, zinc acetate, erbium acetate, gallium nitrate, and indium nitrate precursors. The effects of Ga2O3 layer thickness on the diode properties were investigated. For the deposited films, a combined tiny hexagonal slices and small blocks surface morphology was characterized by scanning electron microscopy for all samples. Diodes were formed after In and Ag deposition on the back side and top side, respectively. The current-voltage characteristics and luminescence spectra are studied. With the increasing of Ga2O3 thickness, the diode forward bias resistance increases while the reverse biased dark current shows the decrease-increase characters. The Er ion corresponded green light emission was characterized for the diode under reverse biased breakdown condition. The increased luminescent intensity with low turn-on current behaviors was characterized by the diode with a Ga2O3 thickness of 4.9 nm. With the diode electrical and luminescence analysis, the effect of the Ga2O3 barrier layer on the diode was discussed. The Ga2O3 barrier layer improves performance for rare earth-related light-emitting devices.

The enhanced n-butanol sensing performance of In2O3 loaded NiO cuboid heterostructure

Monitoring volatile organic compounds (VOCs) quickly and on-site is essential for preserving human health. The semiconductor gas sensor has been a promising strategy for detecting VOCs. However, stability, selectivity, and sensitivity are crucial for the practical application of a gas-sensor material. Innovative synthetic methods have been studied to improve the properties of sensor materials, such as better detection and stability and the construction of p-n heterojunction materials. In this work, NiO/In2O3 heterostructure was synthesized by fast microwave-assisted solvothermal (MAS) using nickel foam and indium nitrate and was studied as a gas sensor for detecting several VOCs. NiO/In2O3 has the combined properties of NiO, a p-type material, and of In2O3, an n-type. NiO/In2O3 presented a superior performance for detecting n-butanol at the ideal operating temperature (350 °C), with a fast response (6 s), good selectivity, and stability. The n-Butanol response at 100 ppm was Ra/Rg = 412 ± 16, and a linear detection range from 1 to 200 ppm was achieved. The best sensing response for this material towards n-butanol is attributed to the electron depletion layer caused by NiO/In2O3 junction and more adsorption sites obtained during fast MAS synthesis.

Synthesis of porous rod-like In2O3 nanomaterials and its selective detection of NO at room temperature

The construction of gas sensors with excellent gas sensitivity and low operating temperature is of great importance while challenging. In this work, using indium nitrate, urea, and sucrose as precursors, In2O3 nanomaterials with the porous rod-like structure were prepared via hydrothermal method combined with high-temperature calcination. FTIR and TGA methods verified the growth process of porous rod-like In2O3 nanomaterials. Significantly, due to the doping of carbon in In2O3, the sensor based on porous rod-like In2O3 nanomaterials showed an enhancement response to NO at room temperature. The porous structure of In2O3 nanomaterials facilitates the diffusion of gas, shortening the response time. The developed materials provide insight into the fabrication of porous nanomaterials and the detection of NO at room temperature.

The effect of added indium nitrate and nickel nitrate on the magnetic and electrochemical properties of carbon nanofibers

Carbon nanofibers (CNFs) have great potential for applications utilizing their unique mechanical, electrical, and magnetic properties in numerous applications, including fuel cells, catalyst support and supercapacitor material. This research addresses the effect of adding indium nitrate and nickel nitrate at a ratio of 2:1 over a polyacrylonitrile (PAN) precursor solution to produce CNF webs using an electrospinning and pyrolysis process. The ferromagnetic behavior was examined by a vibrating sample magnetometer (VSM). The carbon nanofibers prepared from 25 wt% of indium nitrate and nickel nitrate over PAN exhibited ferromagnetic behavior with a magnetization of 105.6 m-emu/g at room temperature. Cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD) analysis were used to examine the electrochemical properties of the sample. The specific capacitance of the sample at a current density of 1 A/g was 195 F/g with a specific surface of 277.5 m2/g and the average pore size was 2.43 nm. The energy density of the sample was 27 Wh/kg, and the power density was around 498.4 W/kg. The cycle stability indicated excellent usability at 95.7% after 1000 cycles at a current density of 5 A/g.

In2O3–ZnO nanotubes for the sensitive and selective detection of ppb-level NO2 under UV irradiation at room temperature

In2O3–ZnO nanotubes were prepared by a solvent thermal method using electrospun indium nitrate–polyvinyl pyrrolidone [In(NO3)3–PVP] nanofibers as a sacrificial template. The sensing properties toward NO2 of this kind of new emerging sensing material were explored. Compared with as-electrospun In2O3 nanofibers, the In2O3–ZnO composite nanotubes exhibited higher responses and better selectivity to NO2. The response of the In2O3–ZnO nanotubes to 500 ppb NO2 at room temperature (RT, 25 °C) under UV irradiation was as high as to 32.73, which was 3.33 times higher than that of the In2O3 nanofibers. Moreover, even under a high relative humidity of 80%, the RT NO2 response of the In2O3–ZnO composite nanotubes can still reach up to 3.50–500 ppb. The enhanced NO2 sensing characteristics were mainly ascribed to the formation of In2O3–ZnO n–n heterojunctions, the enhanced light absorption, and the increased oxygen vacancy proportion. The results suggested that In2O3–ZnO nanotubes had good potential for the selective and sensitive detection of ppb-level NO2 at RT.

A study on the impact of tin concentration on microstructural, dielectric and conductivity properties of ITO nanoparticles

Indium tin oxide (ITO) nanoparticles synthesized by green combustion method using Carica papaya seed extract as a novel fuel and, indium (In) and tin (Sn) as precursor is presented in this paper. Indium nitrate and tin nitrate solution were prepared by dissolving the In ingots and Sn in nitric acid. Carica papaya seed extract was prepared using dried Carica papaya seeds. Carica papaya seed extract along with indium nitrate and tin nitrate solution was heated in muffle furnace at 600 °C for 1 h. The obtained powder was calcinated at 650 °C for 3 h to obtain ITO nanoparticles. The effect of Sn concentration (5%, 10% and 50%) on microstructure, dielectric and ac conductivity of ITO nanoparticles were studied. These properties were investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), high resolution transmission electron microscope (HRTEM), UV–Vis spectroscopy, thermal gravimetry and differential scanning calorimetry (TG-DSC) and computer-controlled impedance analyser. The XRD analysis of synthesized ITO nanoparticles exhibits cubic bixbyite structure with increase in crystallite size from 17 nm to 22 nm as Sn concentration increases. SEM and HRTEM investigations exhibit an increase in grain size as Sn concentration increases. TG-DSC analysis reveals a constant weight in the temperature region 200 to 800 °C. The diffused reflectance spectral studies revealed that the band gap decreases from 3.01 eV to 2.75 eV as Sn concentration increases. The ac conductivity and dc conductivity of ITO nanoparticles was found to increase with increase in Sn concentration and temperature. With improved microstructural properties, higher optical band gap and increased ac conductivity, synthesized ITO nanoparticles with 10% Sn concentration are suitable material for sensor and optoelectronic applications.

A novel non-enzymatic glucose electrochemical sensor with high sensitivity and selectivity based on CdIn2O4 nanoparticles on 3D Ni foam substrate

Due to the poor conductivity of Fe based, Cu based and Co based electrode materials commonly used in the electrochemical detection of glucose, and the uneven stirring and poor conductivity of the traditional preparation method based on glassy carbon electrode. In order to solve the above problems, in this work, CdIn2O4 with high electrical conductivity was directly grown on three-dimensional (3D) Ni foam to prepare electrode materials for non-enzymatic glucose sensors. CdIn2O4 nanoparticles is prepared from cadmium acetate and indium nitrate hydrate in benzyl alcohol by non-aqueous sol–gel method. The electrocatalytic oxidation performances of CdIn2O4 electrode material for non-enzymatic glucose are studied. The results show that the proposed CdIn2O4 electrode material has good electrochemical properties and sensing performance for glucose detection. The electrochemical response of CdIn2O4 electrode material to glucose is recorded that calibration plot for glucose concentrations ranging from 1.0 μM to 1.0 mM (R 2 = 0.99), a limit detection of 0.08 μM, an excellent sensitivity of 3.2925 mA.mM−1.cm−2, a rapid response time of 1.58 s, a good selectivity and a good long-term stability. These demonstrate the significant potential of CdIn2O4 electrode material based on 3D Ni foam as non-enzymatic glucose sensors, which makes it possible to use it as a practical glucose detector. This work could introduce a new concept of nanoparticles modified electrode material grown directly on 3D Ni foam, thus a simple and reliable electrochemical glucose sensor platform is realized. This study was completed in 2019 in the school of materials and energy, Yunnan University.