Gallium indium nitrate doped PbS and MoS2 with ligands based photovoltaic cell structure for enhanced efficiency incorporating transformer based module with hydro Ferron chloride thermal sub cell cooling system

Abstract

AbstractA solar photovoltaic cell that is efficient and produces more power while taking up less area by absorbing high‐light energy. To improve the efficiency of the photovoltaic cell (PV), recombination technique is used in the absorption layers of the solar cell. The existing recombination techniques developed by the absorbers have weak interconnectivity, which may leads to defects, and efficiency is reduced due to the high resistance in diffusion length. So, “GNI‐doped PbS and MoS2 with ligands‐based PV structure” is proposed to improve the interconnection between the layers of the Solar cell. Here, gallium nitride (GaN) and indium nitride (InN) act as anode and cathode in first and third layer, to get the better interconnection by interchanging oxide ions where the Gallium Indium nitrate used as semiconductor. To improve the durability, second layer is doped with Bi3+ with Fe3+, which has a rhombohedral perovskite structure. Molybdenum di‐Sulfide (MoS2) is used in the last layer to improve light absorption. To maintain surface passivation, transformer‐based PV module with an HFC Thermal sub cell is employed in which Hydro Ferron chloride combined with Nano graphene platelets is to avoid Potential Induced Degradation and transformers to eliminate the stray current. While implementing, with very low cost the power conversion efficiency of proposed design increased upto 17%.