Indium Antimonide Thin Films Research Articles

Composition dependent structural, electrical, and optical properties of p-type InSb thin film for homojunction device application

A key component of IR detectors and sources is the indium antimonide, having a narrow direct band gap of 0.17eV. The present paper deals with the fabrication, structural, electrical, and optical properties of p-type indium antimonide thin films of about 300 nm thickness by thermal evaporation technique on ultrasonically cleaned glass substrates with different compositions having formula InxSb1-x. Hall measurement indicates that the asfabricated films were p-type, having a carrier concentration of 0.435 x1018to 1.590 x1018 cm-3 and mobility of 3.29 – 6.62 cm2 /V-s for the film thickness of 300 nm. The activation energy (Ea) was determined and found to be in the range of 0.710 – 0.518 eV from the measurement of electrical resistivity of thin films in the temperature ranges of 313 K - 363 K. X-ray diffraction studies revealed the diffraction peaks (111), (220), and (311) confirm the bulk and thin film formation of InSb polycrystalline materials. The grain size (D), dislocation density(δ), and Strain (ε) have been calculated using XRD data. The lattice parameter (a=b=c) was found to be 6.7074Å from the X-ray diffraction method (XRD). The surface morphology study of thin film through scanning electron microscope reveals the formation of nano-grains with grain size ranging between 7.63 nm to 26.32 nm and surface area of 672-1343 nm2 .

The Comparison of InSb-Based Thin Films and Graphene on SiC for Magnetic Diagnostics under Extreme Conditions.

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al2O3 layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO2 insulating layer. All samples were exposed to a fast-neutron fluence of ≈ cm−2. The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate.

Influence of the annealing time on the structural properties for Flash evaporated InSb films

Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at substrate temperatures (473 K) by flash evaporation. X-ray diffraction studies confirm the polycrystalline of the films and the films show preferential orientation along the (111) plane .The particle size increases with the increase of annealing time .The transmission spectra of prepared samples were found to be in the range (400-5000 cm-1 ) from FTIR study . This indicates that the crystallinity is improved in the films deposited at higher annealing time.

New spin-resolved thermal radiation laws for nonreciprocal bianisotropic media

A chiral absorber of light can emit spin-polarized (circularly polarized) thermal radiation based on Kirchhoff’s law which equates spin-resolved emissivity with spin-resolved absorptivity for reciprocal media at thermal equilibrium. No such law is known for nonreciprocal media. In this work, we discover three spin-resolved Kirchhoff’s laws of thermal radiation applicable for both reciprocal and nonreciprocal planar media. In particular, these laws are applicable to multi-layered or composite slabs of generic bianisotropic material classes which include (uniaxial or biaxial) birefringent crystals, (gyrotropic) Weyl semimetals, magnetized semiconductors, plasmas, ferromagnets and ferrites, (magnetoelectric) topological insulators, metamaterials and multiferroic media. We also propose an experiment to verify these laws using a single system of doped indium antimonide (InSb) thin film in an external magnetic field. Furthermore, we reveal a surprising result that the planar slabs of all these material classes can emit partially circularly polarized thermal light without requiring any surface patterning, and identify planar configurations which can experience nontrivial thermal optomechanical forces and torques upon thermal emission into the external environment at lower temperature (nonequilibrium). Our work also provides a new fundamental insight of detailed balance of angular momentum (in addition to energy) of equilibrium thermal radiation, and paves the way for practical functionalities based on thermal radiation using nonreciprocal bianisotropic materials.

Electrochemical behavior of InSb thin films with different crystal structure in alkaline solution

Indium antimonide is a semiconducting material with a wide range of potential applications which narrows down when a highly oxidative surface of InSb is considered. Particularly advantageous is the use of InSb in the form of nanowires. One of the most affordable methods used for their synthesis is a template-assisted electrodeposition within the pores of anodic aluminum oxide (AAO). After electrodeposition of nanowires, the AAO template is typically dissolved in a NaOH solution. The possible and undesirable dissolution of InSb nanowires can weaken electrical transport properties of nanowires. Therefore, it is essential to study corrosion behavior of InSb, which can depend on the semiconductor structure and composition. To achieve this goal, we investigated the effect of crystal size and morphology of pulse electrodeposited indium antimonide thin films on their corrosion behavior in a 0.5 M NaOH aqueous solution. Furthermore, to collect a complete set of data and to explain sometimes complicated electrochemical behavior of semiconducting films, corrosion experiments on metallic films consisting of indium or antimony were also performed. The results were compared with the electrochemical behavior of the single components - indium and antimony which were used as a reference. The open circuit potential, cyclic polarization curves, and Tafel plots were recorded in order to characterize electrochemical properties of thin films such as corrosion potential, corrosion current density, corrosion rate. The obtained results indicate that thin films composed of the single metallic component are less resistant to the corrosion than indium antimonide. Moreover, the corrosion resistance of InSb thin films depends on the crystal size of InSb which can be tuned by the duration of pulse “on”.

Annealing of Sputtered InSb Thin Film for III-V Semiconductor Devices Applications

Abstract: In this paper, the effect of annealing temperature on Indium antimonide (InSb) thin films has been studied. It is proved that the increase in annealing temperature enhances the crystallinity of the InSb thin film. Thin films of InSb have been deposited on silicon and glass substrates by RF sputtering, then vacuum-annealed at 150, 300, 390 and 450 ⁰C. Differential scanning calorimeter (DSC) analysis indicates that InSb thin film crystallizes at 389 ⁰C or above. X-ray diffraction (XRD) results show peaks at (111), (220) and (311) planes, which indicates the formation of crystalline grains. Fourier transform infrared (FTIR) spectroscopy indicates the decrease of optical transmittance upon increasing the annealing temperature, the analysis shows that InSb thin films have bandgaps between 0.233 and 0.241 e.v.

Grain Growth Studies of Indium Antimonide Thin Films and Its Application in photovoltaic cell

Compound III-V materials are formed when atoms from group Illb of the periodic table combine with atoms from group Vb. The resulting com pounds are both crystalline and semiconducting and contain an equal proportion of both atom types. The Indium antimonide crystal has been used for infrared applications and for the radiation detector applications. Thin films of InSb with a thickness of about 0.12 micrometer are prepared onto well-cleaned glass substrates by employing an e- beam evaporation process. Indium Antimonide thin films are grown onto well cleaned glass substrates at room temperature on cleaned glass substrate in Hind Hivac- Vacuum Coating unit under a vacuum better than 10<sup>−5</sup> Torr. X-ray diffraction studies confirm the polycrystalline of the films and the films show preferential orientation along the (111) plane. The particle size found to about 1100 micrometer of thin film. In this paper we present some of our results concerning the synthesis and crystal growth of indium antimonide compounds . To carry out the synthesis of InSb a suitable mixing furnace was designed and fabricated.

Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Erratum to: Electrical and Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films

Erratum to: Electrical and Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films

Effect of substrate temperature on the electrical and optical properties of electron beam evaporated indium antimonide thin films

Thin films of non-stoichiometric indium antimonide (In0.66Sb0.34) have been deposited by electron beam evaporation technique on glass substrates at different substrate temperatures, (300–473 K). The films have polycrystalline nature with zinc blende structure. The decrease in electrical resistivity with increasing temperature shows semiconducting behavior. Hall measurements indicate that the films are of n-type. Optical transmission spectra of as deposited thin films have been measured at different substrate temperatures. All the electrical parameters i.e. electron mobility (µ), carrier concentration (n), resistivity (ρ), activation energy and band gap (E g ) have been found to be temperature dependent. Suitable explanations are given in the paper.

Electrical and Optical Characterization of Electron Beam Evaporated Indium Antimonide Thin Films

Thin films of non-stoichiometric indium antimonide (In0.66Sb0.34) of different thickness, 300–1,300 nm, deposited by electron beam evaporation technique on glass substrates have been found to have zincblende structure and of n-type semiconductor as determined by Hall measurements. All the electrical parameters i.e. Hall mobility (μ H), carrier concentration (n), resistivity (ρ) and band gap (E g) have been found to be thickness dependent. Suitable explanations are given in the paper.

Influence of the annealing time on the structural properties for Flash evaporated InSb films

Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at substrate temperatures (473 K) by flash evaporation. X-ray diffraction studies confirm the polycrystalline of the films and the films show preferential orientation along the (111) plane .The particle size increases with the increase of annealing time .The transmission spectra of prepared samples were found to be in the range (400-5000 cm-1 ) from FTIR study . This indicates that the crystallinity is improved in the films deposited at higher annealing time.

Planar Hall effect of indium antimonide thin film on silicon and nickel–zinc ferrite substrates

We have investigated Hall and planar Hall (PH) effect of indium antimonide (InSb) films thermally evaporated on two different substrates including Si and soft magnetic Ni–Zn ferrite. Polycrystalline InSb film with an average grain size of 1.2 μm shows substantial electron mobility of 6,700 cm2/Vs for Si and 5,680 cm2/Vs for Ni–Zn ferrite substrates respectively. Four-point bridge type Hall bar of InSb was fabricated using photolithography followed by chemical wet etch. An abrupt change in PH deviated from a normal PH curve was found on a ferrite substrate within a low field range of −50 to 50 Oe while no change happens on the Si substrate. Sharp PH curve immediately returns to the ordinary PH curve when applied field goes over −50 to 50 Oe without leaving any hysteresis of resistance. This is mainly attributed to the presence of the Bloch wall of Ni–Zn ferrite underneath InSb Hall bar. Intragranular domain wall movement is believed to be a prime source of the anomalous PH behavior in the low field range. The linear field dependence of PH in a resolution of 10 mΩ/Oe is sensitive high enough to be used as low-field magnetic sensors.

Formation of InSb by annealing Sb 2S 3–In thin films

We report a method to produce large area indium antimonide thin films through a reaction in solid state between thin films of Sb 2S 3 and In (Sb 2S 3+2 In→2 InSb+3 S↑). A thin film of Sb 2S 3 with typically 0.2 μm thickness is produced on glass substrate by chemical bath deposition at 10°C using thiosulfatoantimonate(III) complex. Subsequently, a thin film of indium is deposited on the Sb 2S 3 film by thermal evaporation. Annealing the thin film stack of Sb 2S 3–In at 300°C under nitrogen atmosphere produces the InSb thin film. The formation of this film is confirmed by X-ray diffraction studies. We discuss the optimization of the individual film thickness in the Sb 2S 3–In stack to produce a thin film of single-phase InSb or a heterostructure, Sb 2S 3–InSb. The electrical and optical properties of the films are presented.

Production of InSb Thin Films Through Annealing Sb2S3-In Thin Films

ABSTRACTA method to produce large area indium antimonide thin films through a reaction, Sb2S3 + 2 In → 2 InSb + 3 S↑ is presented. A thin film of Sb2S3 with typically 0.2 μm thickness is produced on glass substrate by chemical bath deposition (CBD) at 10°C using thiosulfatoantimonate(III) complex. Subsequently, a thin film of indium is deposited on the Sb2S3 film by thermal evaporation. Annealing the thin film stack of Sb2S3-In at 300°C in a nitrogen atmosphere produces the InSb thin film. The formation of this film is confirmed by x-ray diffraction studies. We would discuss the optimization of the individual film thickness in the Sb2S3-In stack to produce a thin film of single phase InSb or a heterostructure, Sb2S3-InSb. The electrical and optical properties of the films are presented.

Spin–disorder scattering in europium-doped indium antimonide thin films

We have studied the low temperature magnetoresistance of In1−xEuxSb for a range of europium concentrations. We find that the addition of the rare earth element reduces the carrier mobility substantially and alters dramatically the character of the magnetoresistance. In particular, we observe negative magnetoresistance for 0.012<x<0.05. We attribute this to a predominance of scattering of the conduction electrons by the magnetic spins of the europium atoms, a scattering process which becomes less effective as the spins align with the magnetic field. For the most lightly doped sample, the magnetoresistance becomes positive at high fields, indicating complete saturation of the spin alignment and appearance of normal (classical) magnetoresistance. In addition, for samples not too heavily doped with europium, the magnetoresistance for very low fields (less than 0.5 T) is small and positive before reaching a maximum and evolving into a negative magnetoresistance. This behavior, similar to that seen in EuSe, is thought to be due to a redistribution of the conduction electrons in the spin–split electronic energy levels.

Guided-wave optical bistability in indium antimonide thin films

Various grating configurations used to obtain optical bistability in a guided-wave format are discussed and experimentally demonstrated using indium antimonide planar waveguides. The theory of nonlinear diffusive distributed input grating coupling, is presented. The enhancement afforded by additional feedback mechanisms is verified, both with an externally coupled counterpropagating beam and with an integrated optics Bragg reflector.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Microzone Recrystallization of InSb Thin Films for Hall Effect Magnetic Heads

A new processing method is proposed for fabricating indium antimonide thin film Hall elements on ferrite substrates applicable to high singal-to-noise ratio Hall effect magnetic heads. The procedures include (1) coating the substrate with a thin glass layer containing 12 mol% alumina, then evaporating InSb film on it, (2) microzone-recrystallization of the film in a helium atmosphere containing ∼300 ppm oxygen, and (3) lapping the film to obtain a desired thickness (2 µm) and smooth surface. The film thus formed, having the grain size of ∼3 mm×0.5 mm and dislocation density of ∼107 cm-2, shows electron mobility of 60,000 cm2/Vs, Hall coefficient of 350 cm3/C at 300 K (comparable to those of the purest single crystal) and remarkably low current noise in the audio frequency range.

Properties of indium antimonide thin films as fast-response pressure transducers

Results are presented of studies on the application of InSb thin films for measuring rapidly varying pressures up to 600 atm in liquid non-conducting media. A comparison is made between this transducer and the quartz pressure transducer used as devices for measuring rapidly varying pressures. The dynamic error in a pressure-measuring system which included an indium antimonide thin film resistance transducer has been determined as less than 1.5%.

Evaporated InSb thin films and their application to bubble domain devices

Indium antimonide thin films were deposited by the three-temperature method onto various kinds of amorphous substrates such as Corning 7059 glass using source materials of 99.9999 % purity. The optimum ratio of vapor pressures of indium and antimony, and the optimum temperature of the substrate, Tsub, were investigated for each substrate in order that the deposited film had the highest carrier mobility, μH, and Hall coefficient, RH, as well as being perfectly stoichiometric when tested by the x-ray diffraction method. The microstructure of the films was also investigated as a function of Tsub. The thickness of the film varied between 1.0 – 3.2 µm. Among the films thus obtained the best one gave the characteristics of μH = 23,000 cm2/V·sec and RH = 480 cm3/C at room temperature. The latter value is entirely the same as that of the purest bulk material.