Grain Growth Studies of Indium Antimonide Thin Films and Its Application in photovoltaic cell

Abstract

Compound III-V materials are formed when atoms from group Illb of the periodic table combine with atoms from group Vb. The resulting com pounds are both crystalline and semiconducting and contain an equal proportion of both atom types. The Indium antimonide crystal has been used for infrared applications and for the radiation detector applications. Thin films of InSb with a thickness of about 0.12 micrometer are prepared onto well-cleaned glass substrates by employing an e- beam evaporation process. Indium Antimonide thin films are grown onto well cleaned glass substrates at room temperature on cleaned glass substrate in Hind Hivac- Vacuum Coating unit under a vacuum better than 10<sup>−5</sup> Torr. X-ray diffraction studies confirm the polycrystalline of the films and the films show preferential orientation along the (111) plane. The particle size found to about 1100 micrometer of thin film. In this paper we present some of our results concerning the synthesis and crystal growth of indium antimonide compounds . To carry out the synthesis of InSb a suitable mixing furnace was designed and fabricated.