Abstract
Studies the effect of hydrostatic pressure on the indium antimonide thin films n- and p-type conductivity were carried out in the temperature range (−180 ÷ +100) °C. Temperature dependences of the resistance and hydrostatic pressure coefficient for sensitive elements based on InSb thin films doped with zinc and tellurium were studied. Obtained the high values of hydrostatic pressure coefficient and linear character its temperature dependence allows to suggest doped InSb thin films promising material for creating of the hydrostatic pressure sensors up to 5000 bar on their basis operating in the climatic temperature range.
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