Study the Effect of Substrate Temperature on Structural & Electrical Properties of Electron Beam Evaporated In1−xSbx Thin Films

Abstract

Indium Antimonide (InSb) is a promising materials for mid and long wavelength infrared & high speed devices applications because of its small band gap. The Indium Antimonide (InSb) thin films have been deposited onto well cleaned glass substrate at different substrate temperatures (300 K, 323 K, 373 K) by electron beam evaporation technique in the high vacuum chamber at vacuum pressure ∼10−5 torr using prepared non‐stoichiometric InSb powder using formula In1−xSbx (0.2<x<0.4) as a source materials. The characteristics of the films such as structural and electrical properties were investigated in terms of substrate temperature. X‐ray diffraction studies of thin films confirmed the polycrystalline and show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with increase of substrate temperature while dislocation density and strain are decreases. Hall measurements indicate that the films were n‐type, having carrier concentration ∼1014 cm−3 and mobility ∼103 cm2/Vs for the film thickness of 300 nm. It is also observed that the carrier concentration (N) decreases and the Hall mobility (μ) increases with the increase of substrate temperature.At the request of all authors, Rahul, S. R. Vishwakarma, Aneet Kumar Verma, and Ravi Shankar Nath Tripathi, and due to errors in the article, the paper is retracted from the scientific record.At the request of all authors, Rahul, S. R. Vishwakarma, Aneet Kumar Verma, and Ravi Shankar Nath Tripathi, and due to errors in the article, the paper is retracted from the scientific record.