Sources Of Indistinguishable Photons Research Articles

Xenon plasma-focused ion beam milling for fabrication of high-purity, bright single-photon sources operating in the C-band

Electron beam lithography is a standard method for fabricating photonic micro and nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique is difficult for direct 3D control of the structure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D shaping of photonic structures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. The method is optimized to minimize the possible ion-beam-induced material degradation, which allows exploration of both non-deterministic and deterministic fabrication approaches, resulting in photonic structures naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QD membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain simulations show that the angled sidewalls significantly increase the emission collection efficiency to approx. 0.9 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (∼99%) and a superior extraction efficiency value reported in the C-band of η = 24 ± 4%.

Design of GaAs microcavity on SiN waveguide for efficient single-photon generation by resonant excitation

Silicon nitride (SiN) photonic circuits are attracting significant interest as a platform for photonic quantum information processing. Integration of deterministic single photon sources (SPSs) is required for large-scale single-photon-based quantum applications. InAs/GaAs quantum dots (QDs) have been demonstrated to be state-of-the-art deterministic SPSs under resonant excitation. However, InAs/GaAs QD SPSs integrated on chip often suffer from unwanted crosstalk from scattering of resonant excitation laser. Moreover, the mismatch in refractive indices of SiN and GaAs impedes efficient coupling of single photons into the photonic circuit. In this work, we design a GaAs photonic crystal (PhC) nanobeam cavity with an embedded QD on top of a SiN waveguide in SiO2 that can suppress crosstalk from resonant excitation and realize high coupling efficiency at the same time. The crosstalk is reduced by employing a carefully designed nanobeam cavity that removes complex structures around the excitation spot. The high coupling efficiency is achieved with a weak hybridized mirror formed by proximity of GaAs PhC nanobeam and SiN waveguide that makes the cavity and helps transferring photons into the waveguide. This enables more than 90% coupling efficiency. The designed device is expected to be a bright source of indistinguishable photons.

Synchronized source of indistinguishable photons for quantum networks

We present a source of indistinguishable photons at telecom wavelength, synchronized to an external clock, for the use in distributed quantum networks. We characterize the indistinguishability of photons generated in independent parametric down-conversion events using a Hong-Ou-Mandel interferometer, and show non-classical interference with coalescence, C = 0.83(5). We also demonstrate the synchronization to an external clock within sub-picosecond timing jitter, which is significantly shorter than the single-photon wavepacket duration of ≈ 35 ps. Our source enables scalable quantum protocols over multi-node, long-distance optical networks using network-based clock recovery systems.

Electric-Field Fluctuations as the Cause of Spectral Instabilities in Colloidal Quantum Dots.

Spectral diffusion (SD) represents a substantial obstacle toward implementation of solid-state quantum emitters as a source of indistinguishable photons. By performing high-resolution emission spectroscopy for individual colloidal quantum dots at cryogenic temperatures, we prove the causal link between the quantum-confined Stark effect and SD. Statistically analyzing the wavelength of emitted photons, we show that increasing the sensitivity of the transition energy to an applied electric field results in amplified spectral fluctuations. This relation is quantitatively fit to a straightforward model, indicating the presence of a stochastic electric field on a microscopic scale, whose standard deviation is 9 kV/cm, on average. The current method will enable the study of SD in multiple types of quantum emitters such as solid-state defects or organic lead halide perovskite quantum dots, for which spectral instability is a critical barrier for applications in quantum sensing.

Nanocavity enhanced photon coherence of solid-state quantum emitters operating up to 30 K

Solid-state emitters such as epitaxial quantum dots have emerged as a leading platform for efficient, on-demand sources of indistinguishable photons, a key resource for many optical quantum technologies. To maximise performance, these sources normally operate at liquid helium temperatures ( ∼4 K ), introducing significant size, weight and power requirements that can be impractical for proposed applications. Here we experimentally resolve the two distinct temperature-dependent phonon interactions that degrade indistinguishability, allowing us to demonstrate that coupling to a photonic nanocavity can greatly improve photon coherence at elevated temperatures up to 30 K that are compatible with compact cryocoolers. We derive a polaron model that fully captures the temperature-dependent influence of phonons observed in our experiments, providing predictive power to further increase the indistinguishability and operating temperature of future devices through optimised cavity parameters.

Toward radiative-limited coherence of erbium dopants in a nanophotonic resonator

Atomic-like emitters in the solid state serve as important resources in the advancement of future quantum networks. In particular, intra-4f optical transitions of rare earth ions exhibit excellent coherence properties thanks to the shielding effect of outer electrons. Still, the presence of various dephasing channels in solid state hosts introduces additional decoherence beyond the radiative decay, causing the coherence time of most rare earth doped materials to be over an order of magnitude lower than the radiative limit. Such obstacle prevents the emission of indistinguishable photons from rare earth ions, which is an essential requirement for various quantum applications. In this work, we perform optical coherence study on erbium ions doped in thin-film lithium niobate by patterning photonic crystal resonators with quality factor around 100 k and sub-λ3 mode volume. Leveraging the combination of long coherence and strong Purcell enhancement in the cavity, we show that the coherence time measured with photon echo approaches the radiative limit (80%), representing a 50-fold improvement compared to the waveguide case. Our results present promising prospects toward utilizing rare earth doped materials as quantum repeaters and sources of indistinguishable photons.

A DFT study of electron–phonon interactions for the and defects in hexagonal boron nitride: investigating the role of the transition dipole direction

Quantum emitters in two-dimensional hexagonal boron nitride (h-BN) have generated significant interest due to observations of ultra-bright emission made at room temperature. The expectation that solid-state emitters exhibit broad zero-phonon lines at elevated temperatures has been put in question by recent observations of Fourier transform (FT) limited photons emitted from h-BN flakes at room temperature. All decoupled emitters produce photons that are directed in-plane, suggesting that the dipoles are perpendicular to the h-BN plane. Motivated by the promise of an efficient and scalable source of indistinguishable photons that can operate at room temperature, we have developed an approach using density functional theory (DFT) to determine the electron-phonon coupling for defects that have in- and out-of-plane transition dipole moments. Our DFT calculations reveal that the transition dipole for the defect is parallel to the h-BN plane, and for the defect is perpendicular to the plane. We calculate both the phonon density of states and the electron–phonon matrix elements associated with the h-BN defective structures. We find no indication that an out-of-plane transition dipole by itself will result in the low electron–phonon coupling that is expected to produce FT-limited photons at room temperature. Our work provides direction to future DFT software developments and adds to the growing list of calculations relevant to researchers in the field of solid-state quantum information processing.

Nitrogen-Vacancy Center Coupled to an Ultrasmall-Mode-Volume Cavity: A High-Efficiency Source of Indistinguishable Photons at 200 K

Solid state atom-like systems have great promise for linear optic quantum computing and quantum communication but are burdened by phonon sidebands and broadening due to surface charges. Nevertheless, coupling to a small mode volume cavity would allow high rates of extraction from even highly dephased emitters. We consider the nitrogen vacancy centre in diamond, a system understood to have a poor quantum optics interface with highly distinguishable photons, and design a silicon nitride cavity that allows 99 % efficient extraction of photons at 200 K with an indistinguishability of > 50%, improvable by external filtering. We analyse our design using FDTD simulations, and treat optical emission using a cavity QED master equation valid at and beyond strong coupling and which includes both ZPL broadening and sideband emission. The simulated design is compact (< 10 um), and owing to its planar geometry, can be fabricated using standard silicon processes. Our work therefore points towards scalable fabrication of non-cryogenic atom-like efficient sources of indistinguishable photons.

Development of site-controlled quantum dot arrays acting as scalable sources of indistinguishable photons

We report on the realization of an array of 28 × 28 mesas with site-controlled InGaAs quantum dots acting as single-photon sources for potential applications in photonic quantum technology. The site-selective growth of quantum dots is achieved by using the buried stressor approach where an oxide aperture serves as the nucleation site in the center of each mesa. Spectroscopic maps demonstrate the positioning of quantum dots with an inhomogeneous broadening of the ensemble emission of only 15.8 meV. Individual quantum dots are characterized by clean single-quantum-dot spectra with narrow exciton, biexciton, and trion lines, with a best value of 27 μeV and an ensemble average of 120 μeV. Beyond that, Hanbury Brown and Twiss and Hong-Ou-Mandel measurements validate the quantum nature of emission in terms of high single-photon purity and photon indistinguishability with a g(2)(0) value of (0.026 ± 0.026) and a post-selected two-photon interference visibility V = (87.1 ± 9.7)% with an associated coherence time of τc = (194 ± 7) ps.

Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si3N4 Quantum Photonic Circuits.

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip.

Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈ 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function for the frequency-converted light is antibunched with , compared to the before-conversion value . We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks.

Indistinguishable and efficient single photons from a quantum dot in a planar nanobeam waveguide

We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a single-photon purity larger than 99.4% and a photon indistinguishability of up to 94+-1% by using p-shell excitation combined with spectral filtering to reduce photon jitter. A temperature-dependent study allows pinpointing the residual decoherence processes notably the effect of phonon broadening. Strict resonant excitation is implemented as well as another mean of suppressing photon jitter, and the additional complexity of suppressing the excitation laser source is addressed. The study opens a clear pathway towards the long-standing goal of a fully deterministic source of indistinguishable photons, which is integrated on a planar photonic chip.

Electrically driven and electrically tunable quantum light sources

Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots in the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fine structure splitting.

An electrically driven cavity-enhanced source of indistinguishable photons with 61% overall efficiency

We report on an electrically driven efficient source of indistinguishable photons operated at pulse-repetition rates f up to 1.2 GHz. The quantum light source is based on a p-i-n-doped micropillar cavity with integrated self-organized quantum dots, which exploits cavity quantum electrodynamics effects in the weak coupling regime to enhance the emission of a single quantum emitter coupled to the cavity mode. We achieve an overall single-photon extraction efficiency of (61 ± 11) % for a device triggered electrically at f = 625 MHz. Analyzing the suppression of multi-photon emission events as a function of excitation repetition rate, we observe single-photon emission associated with g(2)HBT(0) values between 0.076 and 0.227 for f ranging from 373 MHz to 1.2 GHz. Hong-Ou-Mandel-type two-photon interference experiments under pulsed current injection at 487 MHz reveal a photon-indistinguishability of (41.1 ± 9.5) % at a single-photon emission rate of (92 ± 23) MHz.

Bright source of indistinguishable photons based on cavity-enhanced parametric down-conversion utilizing the cluster effect

We present a bright, simple-to-setup, single-mode source of indistinguishable photon pairs at the cesium D1-line with a bandwidth of about 100 MHz. The source is based on degenerate, cavity enhanced spontaneous parametric down-conversion utilizing the cluster effect. The setup relies on a microcontroller-based digital locking system. A brightness of 1.1×103/(s mW) detected, indistinguishable photon pairs could be measured.

Energy-tunable single-photon light-emitting diode by strain fields

We report a strain-tunable quantum light-emitting diode for generation of electrically triggered and energy-tunable single photons. The device consists of a p-i-n quantum dots containing nanomembrane integrated onto a piezoelectric actuator. By injecting ultrafast voltage pulses, electrically driven light emission is realized and the quantum nature of single-photon emission is revealed in the second-order time correlation measurements. In addition to electrically pulsed excitation, we achieved a broad tuning range ( $${\sim }$$ 9 meV) to the energy of the emitted single photons by imposing giant biaxial strain fields on quantum dots within the diode. We further show that energy of the single-photon emission emitted from different quantum dots can be tuned to degeneracy, thus rendering the quantum interference on which most of existing photonic quantum technologies rely. The device reported in this work represents an important step toward the realization of quantum repeater by using electrically triggered quantum light sources of indistinguishable photons.

Ultracompact quantum splitter of degenerate photon pairs

Integrated sources of indistinguishable photons have attracted a lot of attention because of their applications in quantum communication and optical quantum computing. Here, we demonstrate an ultracompact quantum splitter for degenerate photon pairs based on a monolithic silicon chip. It incorporates a Sagnac loop and a microring resonator with a total footprint of 0.011 mm2, generating and deterministically splitting indistinguishable photon pairs using two-photon interference. The ring resonator provides an enhanced photon generation rate, and the Sagnac loop ensures the photons travel through equal path lengths and interfere with the correct phase to enable the reversed Hong–Ou–Mandel (HOM) effect to take place. In the experiment, we observed a HOM dip visibility of 94.5±3.3%, indicating the generated photons are in a suitable state for further integration with other components for quantum applications, such as controlled-NOT gates.

Pulsed source of spectrally uncorrelated and indistinguishable photons at telecom wavelengths.

We report on the generation of indistinguishable photon pairs at telecom wavelengths based on a type-II parametric down conversion process in a periodically poled potassium titanyl phosphate (PPKTP) crystal. The phase matching, pump laser characteristics and coupling geometry are optimised to obtain spectrally uncorrelated photons with high coupling efficiencies. Four photons are generated by a counter-propagating pump in the same crystal and anlysed via two photon interference experiments between photons from each pair source as well as joint spectral and g((2)) measurements. We obtain a spectral purity of 0.91 and coupling efficiencies around 90% for all four photons without any filtering. These pure indistinguishable photon sources at telecom wavelengths are perfectly adapted for quantum network demonstrations and other multi-photon protocols.

Full counting statistics of quantum dot resonance fluorescence.

The electronic energy levels and optical transitions of a semiconductor quantum dot are subject to dynamics within the solid-state environment. In particular, fluctuating electric fields due to nearby charge traps or other quantum dots shift the transition frequencies via the Stark effect. The environment dynamics are mapped directly onto the fluorescence under resonant excitation and diminish the prospects of quantum dots as sources of indistinguishable photons in optical quantum computing. Here, we present an analysis of resonance fluorescence fluctuations based on photon counting statistics which captures the underlying time-averaged electric field fluctuations of the local environment. The measurement protocol avoids dynamic feedback on the electric environment and the dynamics of the quantum dot's nuclear spin bath by virtue of its resonant nature and by keeping experimental control parameters such as excitation frequency and external fields constant throughout. The method introduced here is experimentally undemanding.