Increase In Recombination Rate Research Articles

Recombination of Lophyl Radicals in Pyrrolidinium‐Based Ionic Liquids

The recombination of photolytically generated lophyl radicals has been investigated by UV/Vis spectroscopy in 1-alkyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imides (NTf2) in comparison with 1-butyl-3-methylimidazolium NTf2 , dimethyl sulfoxide, and triacetin. The 1-alkyl-1-methylpyrrolidinium-based ionic liquids contain an alkyl substituent varying between butyl and decyl groups. Optically pure ionic liquids are used in these studies. Temperature-dependent investigation of lophyl radical recombination shows an increase in the radical recombination rate with increasing temperature in each solvent, which is caused by decreasing viscosity with increasing temperature. Furthermore, the viscosity of the 1-alkyl-1-methylpyrrolidinium NTf2 increases nearly linearly within the row of these ionic liquids. In contrast, the recombination of the photolytically generated lophyl radicals is significantly faster in the ionic liquids than in the traditional organic solvents under investigation. Moreover, the recombination rate increases with the length of the alkyl chain bound at the cation of the ionic liquid at a given temperature. This may be caused by an increase in the extent of lophyl radical recombination within the solvent cage. Solvent cage effects dominate in the case of lophyl radical recombination in ionic liquids bearing a long alkyl chain or if the temperature is near the melting temperature of the ionic liquid. The positive value of the activation entropy supports this hypothesis. The results obtained are important for discussion of bimolecular radical reactions in ionic liquids.

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Role of Cdc48/p97 as a SUMO-targeted segregase curbing Rad51–Rad52 interaction

Cdc48 (also known as p97), a conserved chaperone-like ATPase, plays a strategic role in the ubiquitin system. Empowered by ATP-driven conformational changes, Cdc48 acts as a segregase by dislodging ubiquitylated proteins from their environment. Ufd1, a known co-factor of Cdc48, also binds SUMO (ref. 6), but whether SUMOylated proteins are subject to the segregase activity of Cdc48 as well and what these substrates are remains unknown. Here we show that Cdc48 with its co-factor Ufd1 is SUMO-targeted to proteins involved in DNA double-strand break repair. Cdc48 associates with SUMOylated Rad52, a factor that assembles the Rad51 recombinase on chromatin. By acting on the Rad52-Rad51 complex, Cdc48 curbs their physical interaction and displaces the proteins from DNA. Genetically interfering with SUMO-targeting or segregase activity leads to an increase in spontaneous recombination rates, accompanied by aberrant in vivo Rad51 foci formation in yeast and mammalian cells. Our data thus suggest that SUMO-targeted Cdc48 restricts the recombinase Rad51 by counterbalancing the activity of Rad52. We propose that Cdc48, through its ability to associate with co-factors that have affinities for ubiquitin and SUMO, connects the two modification pathways for protein degradation or other regulatory purposes.

Abstract 4055: Non-canonical telomere maintenance mechanism in B-cell chronic lymphocytic leukemia.

Abstract Unlimited cancer cells proliferation requires mechanisms that counteract telomere attrition. In the majority of cancer cells this is possible through up-regulation of telomerase activity. Alternatively, cancer cells use homologous recombination between telomeres. This second mechanism called ALT (Alternative Lengthening of Telomere) implicates proteins that either elongates telomeres or that either prevents telomere loss (maintenance). Among these proteins a complex composed of the topoisomerase III alpha (hTopoIIIα), BLM, RMI1 and 2 is require to repair stalled replication forks. Little is known about the involvement of the ALT mechanism in B-cell chronic lymphocytic leukemia (B-CLL), which shows low telomerase activity, shelterin defect and telomeric dysfunctions. We found that hTopoIIIα gene expression is downregulated in almost all B-CLL patients tested (94%; n=31), with 60% of B-CLL patients presenting a two time decreased compared to control samples. That prompted us to build the first CpG islands map of the hTopoIIIα promoter and to characterize those that are methylated in B-CLL patients. To investigate the methylation impact, we first treated CLL cell lines with 5-Azacytidine, a chemical analogue of cytidine that induces hypomethylation, and demonstrated that this treatment increases hTopoIIIα expression. In line, luciferase experiments revealed that SSSI-induced CpG islands methylation inside the TopoIIIα promoter leads to a transcriptional inhibition. Nevertheless, deletion mutants of the TopoIIIα promoter suggested that CpG islands found to be methylated in B-CLL patients are not implicated in TopoIIIα expression regulation through methylation. Interestingly, we didn't observe a good correlation between mRNA and protein expressions in all B-CLL patients (n=6). Indeed some patients with a moderate amount of mRNA showed low level of the corresponding protein hTopoIIIα (<50% compared to controls; n=3). Downregulation of hTopoIIIα may increase recombination rate between sister chromatid. Hence, experiments aiming to evaluate sister chromatid exchange and telomeric sister chromatid exchange rate on B-CLL patients samples according to their hTopoIIIα expression level have been performed and the data will be discuss. Our results suggest that there is no canonical mechanism maintaining telomeres in B-CLL but rather an overall recombination arising during replication, due to hTopoIIIα downregulation, leading to a silenced genetic instability in the early step of the disease. Citation Format: Sandrine Medves, Morgan Auchter, Laetitia Chambeau, Sophie Gazzo, Aurélie Verney, Etienne Moussay, Wim Ammerlaan, Hamid Morjani, Vincent Géli, Valérie Palissot, Gilles Salles, Guy Berchem, Thomas Wenner. Non-canonical telomere maintenance mechanism in B-cell chronic lymphocytic leukemia. [abstract]. In: Proceedings of the 104th Annual Meeting of the American Association for Cancer Research; 2013 Apr 6-10; Washington, DC. Philadelphia (PA): AACR; Cancer Res 2013;73(8 Suppl):Abstract nr 4055. doi:10.1158/1538-7445.AM2013-4055

Enhancement of Multiphoton Emission from Single CdSe Quantum Dots Coupled to Gold Films

Single molecule time-resolved fluorescence spectroscopy of CdSe/ZnS core-shell quantum dots (QDs) localized near a rough gold thin film demonstrates significant enhancement of multiphoton emission while at the same time showing a decrease in single photon emission. A rigorous analysis of time-resolved photon correlation spectroscopy and fluorescence lifetime data on single quantum dots at room temperature reveals an increase in radiative recombination rate of multiexcitons that is much higher than expected and, perhaps more significantly, is not correlated with concomitant increases in single exciton recombination rates. We believe that these results confirm a stronger coupling of multiexcitons to plasmon modes via a coupling to plasmon multipole modes.

Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers

AbstractExcitation‐intensity dependent photoluminescence (PL) as well as effective recombination time of a series of c‐plane GaN layers grown on sapphire substrates were measured at room temperature. It was shown that at low excitation level a high background free‐electron concentration causes an increase of radiative recombination rate in the near band edge region of GaN that results in an increase of the PL efficiency. In the investigated series, the GaN layers with lower crystal quality but having higher free‐electron concentration showed higher PL efficiency at excitation levels under ∼50 kW/cm2. At elevated excitation levels the impact of free‐carrier concentration decreases and the PL efficiency is mainly determined by nonradiative recombination time. From simulations of excitation‐intensity dependent PL efficiency, the Auger recombination coefficient in the investigated GaN samples was estimated to be much less then 10–30 cm6s–1. A drop of PL efficiency was observed at excitation levels higher than 2500 kW/cm2 when PL was registered from sample's surface. The reason of the drop was stimulated emission propagating along the in‐plane direction and causing the saturation of photogenerated carrier density. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

By introducing Ag nanoclusters (NCs), ZnO-based resistive switching memory devices offer improved performance, including improved uniformity of switching parameters, and increased switching speed with excellent reliability. These Ag NCs are formed between the top-electrode (cathode) and the switching layer by an electromigration process in the initial several switching cycles. The electric field can be enhanced around Ag NCs due to their high surface curvature. The enhanced local-electric-field (LEF) results in (1) the localization of the switching site near Ag NCs, where oxygen-vacancy-based conducting filaments have a simple structure, and tend to connect Ag NCs along the LEF direction; (2) an increase in migration and recombination rates of oxygen ions and oxygen vacancies. These factors are responsible for the improvement in device performance.

Ultraviolet Radiation Action onto Nanostructures with Quantum Wells GaAs/AlGaAs

Optical properties modification of semiconductor heterostructure with quantum wells GaAs/AlGaAs by the ultraviolet (UV) radiation was investigated in the range of energy density of 0 – 500 mJ/cm2 . It was shown that photoluminescence signal amplitude decreases with an increase of UV energy density; this dependence revealed threshold nature with the threshold value about 100 mJ/cm2 – in agreement with other results on laser formation of the point defects in GaAs. Reflectivity kinetics of the sample detected at the probe radiation wavelength corresponding to the photoluminescence line center showed an increase of electron-hole recombination rate with growth of UV energy density. Sharp focusing of UV laser radiation led to a plume formation over the sample surface; spectrum of the plume contained neutral gallium atoms doublet at wavelengths of 403 нм and 417 nm

Mechanisms of Telomere Maintenance Dysfunction in B-Chronic Lymphocytic Leukemia Through CpG Island Methylation

AbstractAbstract 3489Telomeres are a repetitive DNA sequences associated with a protein complex named shelterin that protect chromosome ends. Two types of mechanisms maintain telomere in cancer cells. The first involves telomerase an enzyme able to copy the telomeric motif that consists of three principal subunits, including the telomerase reverse transcriptase hTERT. The second, named ALT (Alternative Lengthening of Telomere), corresponds to the recombination between telomeres that involves notably a complex formed by the topoisomerase III alpha (hTopoIIIa), BLM, RMI1 and RMI2. Little is known about the involvement of the ALT mechanism in B-chronic lymphocytic leukemia (B-CLL). In fact this leukemic disease shows low telomerase activity, shelterin defect and telomeric dysfunction.In an effort to characterize ALT cells from 31 B-CLL patients, we analyzed their telomere length and telomerase activity. B-CLL patients showed almost no hTERT transcript (detected in three cases), low telomerase activity (detected in 7 cases) and a telomere average size ranging from 3 to 10 kb. Moreover, a strong deregulation of genes encoding three shelterin proteins, TRF1, TRF2, Pot1, and an at least two fold downregulation of hTopoIIIa gene expression in 21 cases were observed, suggesting the presence of a telomere maintenance dysfunction affecting both mechanisms, telomerase dependent and ALT. CpG island methylation has been mapped for both promoters and if hTERT shows a disseminated methylation profile in 22 patients, for hTopoIIIα we identified nine CpG upstream the minimal promoter, being methylated in 19 of our 31 analyzed patients. We then performed luciferase experiments and we showed that methylation in this 9 CpG induced a strong inhibition of hTopoIIIa transcription. Finally we correlated telomere length and hTopoIIIa methylation status as we observed that 25.4% of the hTopoIIIa promoters were methylated in patients with shorter chromosomes and only 11.1 % were methylated in patients with longer telomeres (p<0.0025).As nearly no telomerase activity have been detected in our patients and as downregulation of hTopoIIIa could increase recombination rate between sister chromatid, methylation of hTERT and hTopoIIIa promoter CpG islands may lead to telomere dysfunction and increased genetic instability in B-CLL. Disclosures:No relevant conflicts of interest to declare.

Effect of sodium on photovoltaic properties of dye-sensitized solar cells assembled with anatase TiO2 nanosheets with exposed {0 0 1} facets

Anatase TiO2 nanosheets with exposed reactive {001} facets were prepared in the presence of HF. The photovoltaic properties of NaOH-washed anatase TiO2 nanosheets with exposed {001} facets were investigated by assembling the TiO2 as photoanodes in dye-sensitized solar cells (DSSCs). A decreased overall efficiency and increased recombination rate was observed in comparison with the H2O-washed counterpart by both dark current scan and open-circuit voltage decay scan, and XPS confirmed that the deleterious effect of sodium ions is responsible for this reduced efficiency in DSSCs.

Physical and Electrochemical Analysis of an Indoor–Outdoor Ageing Test of Large‐Area Dye Solar Cell Devices

A long-term life test (3200 h) on large-area dye-sensitized cells is performed both under outdoor conditions, in the sunny Mediterranean climate in Rome (Italy), and under continuous light soaking (1 Sun, 85 °C). Different degradation rates are investigated for the outdoor samples with horizontally and vertically oriented cells (azimuth South, tilt angle 25°). Thirty identical photocells (active area=3.6 cm(2), conversion efficiencies=(4.8±0.2)%) are aged using a robust master-plate configuration. After the first 1000 h of testing in open-circuit conditions, some of the test samples are set near the maximum power point (MPP) and the life test continued further until 3200 h. A detailed analysis of the physical parameters obtained by electrochemical impedance is given together with electrolyte transmittance variation with time as a function of the ageing conditions. Faster degradation in devices working at the MPP is observed, due mainly to a progressive decrease of the triiodide concentration in the electrolyte and a likely alteration at the titania/electrolyte interface. Outdoor devices working with vertically oriented cells show clearly that the orientation of long-striped cells can affect the lifetime. The aged cells suffer an increase of recombination rate, change in the chemical capacitance, and positive shift of the titania conduction band level. A strong correlation between the increase of the electrolyte diffusion resistance and degradation phenomena is found.

Effect of epistasis and linkage on fixation probability in three-locus models: An ancestral recombination–selection graph approach

We study the probability of ultimate fixation of a single new mutant arising in an individual chosen at random at a locus linked to two other loci carrying previously arisen mutations. This is done using the Ancestral Recombination–Selection Graph (ARSG) in a finite population in the limit of a large population size, which is also known as the Ancestral Influence Graph (AIG). An analytical expansion of the fixation probability with respect to population-scaled recombination rates and selection intensities is obtained. The coefficients of the expansion are expressed in terms of the initial state of the population and the epistatic interactions among the selected loci. Under the assumption of weak selection at tightly linked loci, the sign of the leading term, which depends on the signs of epistasis and initial linkage disequilibrium, determines whether an increase in recombination rates increases the chance of ultimate fixation of the new mutant. If mutants are advantageous, this is the case when epistasis is positive or null and the initial linkage disequilibrium is negative, which is an expected state in a finite population under directional selection. Moreover, this is also the case for a neutral mutant modifier coding for higher recombination rates if the same conditions hold at the selected loci. Under the same conditions, deleterious mutants are disfavored for ultimate fixation and neutral modifiers for higher recombination rates still favored. The recombination rates between the modifier locus and the selected loci do not come into play in the leading terms of the approximation for the fixation probability, but they do in higher-order terms.

Selection and inertia in the evolution of holocentric chromosomes in sedges (Carex, Cyperaceae)

• Changes in chromosome number as a result of fission and fusion in holocentrics have direct and immediate effects on the recombination rate. We investigate the support for the classic hypothesis that environmental stability selects for increased recombination rates. • We employed a phylogenetic and cytogenetic data set from one of the most diverse angiosperm genera in the world, which has the largest nonpolyploid chromosome radiation (Carex, Cyperaceae; 2n = 12-124; 2100 spp.). We evaluated alternative Ornstein-Uhlenbeck models of chromosome number adaptation to the environment in an information-theoretic framework. • We found moderate support for a positive influence of lateral inflorescence unit size on chromosome number, which may be selected in a stable environment in which resources for reproductive investment are larger. We found weak support for a positive influence on chromosome number of water-saturated soils and among-month temperature constancy, which would be expected to be negatively select for pioneering species. Chromosome number showed a strong phylogenetic signal. • We argue that our finding of small but significant effects of life history and ecology is compatible with our original hypothesis regarding selection of optima in recombination rates: low recombination rate is optimal when inmediate fitness is required. By contrast, high recombination rate is optimal when stable environments allow for evolutionary innovation.

Electroluminescence from One-Dimensionally Self-Aligned Si-Based Quantum Dots with High Areal Dot Density

Self-aligned Si-based quantum dots (QDs) with an areal density as high as ∼1013 cm-2 have been successfully fabricated on GeH4-adsorbed ultrathin SiO2 by the process sequence consisting of Si-QDs formation by controlling low-pressure chemical vapor deposition (LPCVD) using pure Si2H6, selective Ge-LPCVD from 5% GeH4 diluted with He, thermal oxidation of the dots, thermal desorption of Ge oxide, and subsequent formation of the Si-QDs. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence (EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as ∼1.2 V at the Au top electrode. Note that, in the case of an areal dot density of ∼1013 cm-2, the EL threshold voltage was reduced down to ∼60% of that of ∼1011 cm-2 and emission intensity was enhanced markedly by a factor of ∼425 in comparison with the case of ∼1011 cm-2 under the same current density. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.

Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates

This work studies the Si-doping of GaAs on (631)-oriented substrates as a function of the As4-beam equivalent pressure (PAs). The electrical properties obtained by Hall effect measurements show that the mobility of the layers grown on (631)-substrates present changes related to carrier compensation processes and the Si-doping changes from p- to n-type when PAs is increased. The optical properties of the samples, as observed by photoluminescence (PL) spectroscopy, modified according to the electrical characteristics. For (631)-samples, when PAs is increased the energy of the maximum intensity PL peak redshifts in the p-type region but, after the threshold of the conduction type conversion, the peak blueshifts in the n-type region. The variation of the PL excitation intensity also shifts the emission energy of the samples as a consequence of the increasing recombination rate for close pairs in donor acceptor pair recombination. Photoluminescence as a function of temperature shows that the activation energy of the PL lines transition is enhanced as PAs is increased.

CRITICAL STAR FORMATION RATES FOR REIONIZATION: FULL REIONIZATION OCCURS AT REDSHIFTz≈ 7

We assess the probable redshift (z{sub rei} Almost-Equal-To 7) for full reionization of the intergalactic medium (IGM) using a prescription for the comoving star formation rate (SFR) density ({rho}-dot{sub SFR}) required to maintain photoionization against recombination. Our newly developed online reionization simulator allows users to assess the required SFR and ionization histories, using a variety of assumptions for galactic and stellar populations, IGM clumping factor and temperature, and Lyman continuum (LyC) escape fraction. The decline in high-redshift galaxy candidates and Ly{alpha} emitters at z = 6-8 suggests a rising neutral fraction, with reionization at z {approx}> 7 increasingly difficult owing to increased recombination rates and constraints from the ionizing background and LyC mean free path. The required rate is {rho}-dot{sub SFR}{approx}(.018 M{sub sun}yr{sup -1}Mpc{sup -3})[(1+z)/8]{sup 3}(C{sub H}/3)(0.2/f{sub esc})T{sub 4}{sup -0.845} scaled to fiducial values of clumping factor C{sub H} = 3, escape fraction f{sub esc} = 0.2, electron temperature T{sub e} = 10{sup 4} K, and low-metallicity initial mass functions (IMFs) and stellar atmospheres. Our hydrodynamical + N-body simulations find a mean clumping factor C{sub H} Almost-Equal-To (2.9)[(1 + z)/6]{sup -1.1} in the photoionized, photoheated filaments at z = 5-9. The critical SFR could be reduced by increasing the minimummore » stellar mass, invoking a top-heavy IMF, or systematically increasing f{sub esc} at high z. The cosmic microwave background optical depth, {tau}{sub e} = 0.088 {+-} 0.015, could be explained by full reionization, producing {tau}{sub e} = 0.050 back to z{sub rei} Almost-Equal-To 7, augmented by {Delta}{tau}{sub e} Almost-Equal-To 0.01-0.04 in a partially ionized IGM at z > 7. In this scenario, the strongest 21 cm signal should occur at redshifted frequencies 124-167 MHz owing to IGM heating over an interval {Delta}z Almost-Equal-To 3 in the range z Almost-Equal-To 7.5-10.5.« less

Fixation Probability in a Two-Locus Model by the Ancestral Recombination–Selection Graph

We use the ancestral influence graph (AIG) for a two-locus, two-allele selection model in the limit of a large population size to obtain an analytic approximation for the probability of ultimate fixation of a single mutant allele A. We assume that this new mutant is introduced at a given locus into a finite population in which a previous mutant allele B is already segregating with a wild type at another linked locus. We deduce that the fixation probability increases as the recombination rate increases if allele A is either in positive epistatic interaction with B and allele B is beneficial or in no epistatic interaction with B and then allele A itself is beneficial. This holds at least as long as the recombination fraction and the selection intensity are small enough and the population size is large enough. In particular this confirms the Hill-Robertson effect, which predicts that recombination renders more likely the ultimate fixation of beneficial mutants at different loci in a population in the presence of random genetic drift even in the absence of epistasis. More importantly, we show that this is true from weak negative epistasis to positive epistasis, at least under weak selection. In the case of deleterious mutants, the fixation probability decreases as the recombination rate increases. This supports Muller's ratchet mechanism to explain the accumulation of deleterious mutants in a population lacking recombination.

Sequence-dependent prediction of recombination hotspots in Saccharomyces cerevisiae

Meiotic recombination does not occur randomly across the genome, but instead occurs at relatively high frequencies in some genomic regions (hotspots) and relatively low frequencies in others (coldspots). Hotspots and coldspots would shed light on the mechanism of recombination, but the accurate prediction of hot/cold spots is still an open question. In this study, we presented a model to predict hot/cold spots in yeast using increment of diversity combined with quadratic discriminant analysis (IDQD) based on sequence k-mer frequencies. 5-fold cross validation showed a total prediction accuracy of 80.3%. Compared with other machine-learning algorithms, IDQD approach is as powerful as random forest (RF) and outperforms support vector machine (SVM) in identifying hotspots and coldspots. We also predicted increased recombination rates in the upstream regions of transcription start sites and in the downstream regions of transcription termination sites. Additionally, genome-wide recombination map in yeast obtained by IDQD model is in close agreement with the experimentally generated map, especially for the Peak locations, although some fine-scale differences exist. Our results highlight the sequence dependency of recombination.

HIV Type 1 gag Genetic Diversity Among Antenatal Clinic Attendees in North Rift Valley, Kenya

HIV genetic recombination and high mutation rate increase diversity allowing it to escape from host immune response or antiretroviral drugs. This diversity has enabled specific viral subtypes to be predominant in specific regions. To determine HIV-1 subtypes among seropositive antenatal clinic attendees in Kenya's North Rift Valley, a cross-sectional study was carried out on 116 HIV-1-positive blood samples. Proviral DNA was extracted from peripheral blood mononuclear cells by DNAzol lysis and ethanol precipitation. Polymerase chain reactions using specific primers for HIV-1 gag and population sequencing on resulting amplicons were carried out. Phylogenetic analysis revealed that 81 (70%) were subtype A1, 13 (11%) subtype D, 8 (7%) subtype C, 3 (3%) subtype A2, 1 (1%) subtype G, and 10 showed possible recombinants: 5 (4%) subtype A1D, 4 (3%) subtype A1C, and 1 (1%) subtype A2C. These data support the need to establish circulating subtypes for better evaluation of effective HIV diagnostic and treatment options in Kenya.

Nonequilibrium carrier dynamics in bulk HPHT diamond at two‐photon carrier generation

AbstractWe demonstrate applicability of time‐resolved free‐carrier absorption and transient grating techniques for investigation of carrier recombination and diffusion features in a bulk diamond. Carrier injection into a 1 mm thick, IIa type high‐pressure high‐temperature grown layer was realized by two‐photon absorption of ∼5 ps laser pulse at 351 nm wavelength. Kinetics of differential transmission in 80–800 K range at various excess carrier densities provided carrier lifetimes of 360 ns at room temperature and their temperature dependences. A linear increase of carrier recombination rate with injection in 450–800 K range resulted in carrier lifetimes up to 1 ns and was fitted by effective coefficient B* = 2 × 10−11– 4 × 10−9 cm3/s. The latter process was attributed to a trap‐assisted Auger recombination (TAAR) with coefficient CTAAR = B*/NTrap and tentatively ascribed to nitrogen related traps. An ambipolar carrier mobility with its peak value of ∼1500 cm2/Vs at room temperature was measured by transient grating technique at ∼1.5 × 1015 cm−3 excess carrier density.