Increasing Irradiation Fluence Research Articles

Control of chiral damping in magnetic trilayers using He+ ion irradiation

In the forefront of spintronic advancements, structures with strong perpendicular magnetic anisotropy (PMA) such as Pt/Co/Pt are essential for the miniaturization and performance enhancement of high-density magnetic storage technologies. The robust PMA characteristic of these systems facilitates the development of scalable spintronic devices, crucial for next-generation magnetic memory applications. This study investigates the interplay between PMA and the Dzyaloshinskii-Moriya interaction (DMI)—an antisymmetric exchange interaction prevalent in non-centrosymmetric magnetic systems—and its dissipative counterpart, chiral damping. While chiral damping arises from the same broken inversion symmetry as DMI, it typically introduces an additional energy dissipation channel, reducing device efficiency. Our research examines the effects of controlled helium ion (He+) irradiation on a Pt/Co/Pt system. We find that ion beam irradiation enhances interfacial intermixing, which correlates with a decrease in PMA. However, domain wall velocity measurements indicate a concurrent reduction in both DMI and chiral damping, along with enhanced velocities as irradiation fluence increases. These observations suggest that ion beam irradiation can be judiciously applied to achieve a balance between lower DMI, chiral damping, and reasonable PMA, thereby optimizing the system for improved device performance.

Effect of Au ion irradiation on microstructure, mechanical, and lead‐bismuth eutectic corrosion properties of Cr/ZrO2 coatings

AbstractThe effect of ion irradiation on the microstructure, mechanical, and corrosion properties of Cr/ZrO2 coating was investigated. The monoclinic to tetragonal phase transition is observed under heavy ion irradiation, and the tetragonal phase is stabilized by the irradiation‐induced defect clusters. With increasing irradiation fluence, grain growth, and irradiation‐induced hardening effects are observed. After lead‐bismuth eutectic (LBE) corrosion at 650°C for 1000 h, the irradiated coatings can still maintain structural integrity and protect the substrate from lead/bismuth corrosion. However, in contrast to the unirradiated coating, the irradiation‐induced defects provide a channel for the rapid inward diffusion of oxygen atoms from the LBE, leading to the formation of a thicker Cr‐rich oxide layer beneath the ZrO2 coating. This study also provides insight into how irradiation‐induced microstructural changes affect zirconia's properties as a corrosion protection layer.

Au ion irradiation induces ultralow thermal conductivity in GaN

Gallium nitride (GaN) is widely considered as a crucial semiconductor for the nuclear industry and space explorations due to its superior radiation hardness. Despite extensive studies of the electronic and optical properties of irradiated GaN, the effects of particle irradiation on the thermal properties remain largely unexplored. Here, we begin with single-crystalline GaN and employ an accelerator equipped with heavy gold ions (Au2+) as the radiation source in order to imitate extreme environments and maximize lattice damages. Eight different irradiated samples are prepared with the fluence of Au2+ spanning four orders of magnitude from 1011 to 1015 cm−2. The thermal conductivity (κ) of the ion-affected regions is measured using the laser pump–probe technique of frequency-domain thermoreflectance. We find that κ decreased consistently and notably with increasing irradiation fluence and observe a transition from crystal to glass-like thermal transport. Remarkably, the room-temperature κ of the GaN sample with the highest Au2+ fluence of 1 × 1015 cm−2 reaches about 1 Wm−1 K−1, which is two orders of magnitude lower than the κ of pristine GaN and approaches the theoretical minimum. A Callaway-type model captures the phonon–point defect scattering in samples with relatively low ion fluences. At higher fluences, the increased defect types and densities, together with the formation of nitrogen bubbles, further suppress phonon transport. Our findings are instrumental in fundamentally understanding the impact of heavy-ion irradiation on thermal transport and may prove useful for the application of GaN-based devices in radiation-intense environments.

APPLICATION OF RUTHERFORD BACKSCATTERING METHOD FOR STUDYING RADIATION-INDUCED SEGREGATION OF HIGH-ENTROPY NICKEL-BASED ALLOYS

In this study, radiation-induced segregation was studied in high-entropy alloys (HEA) CoCrFeNi, CoCrFeMnNi, irradiated with helium ions He2+ with an energy of 40 keV at room temperature. Changes in the concentrations of HEAs and their depth distributions were studied by Rutherford Backscattering (RBS) and energy dispersive x-ray spectroscopy (EDS) methods. Measurements using the RBS and EDS methods showed that non-irradiated HEAs have a composition close to equiatomic, where the average concentration for CoCrFeNi is 24.8 atomic percents (at.%), and for CoCrFeMnNi – 20 at.%. The EDS results were significantly different from the RBS in Ni/Co concentrations, and indicated no significant changes in element distribution in both HEAs after irradiation. According to the RBS data, the largest changes in concentrations during irradiation in both HEAs relate to the enrichment of Ni atoms. In CoCrFeNi, upon irradiation, Ni/Co atoms undergo the greatest segregation, and in CoCrFeMnNi, the Ni/Co/Fe concentrations change significantly. In CoCrFeMnNi, the change in element concentrations with increasing irradiation fluence was more pronounced than in CoCrFeNi. In CoCrFeMnNi, changes in concentrations of all elements at both fluences reached 0.5–17% (0.1–3.1 at.%) and exceeded changes in CoCrFeNi, which reached 2–11% (0.5–1.9 at.%). It was found that the resistance to segregation when irradiated with helium ions under these conditions was lower for CoCrFeMnNi than for CoCrFeNi. In CoCrFeNi and CoCrFeMnNi, changes in the concentrations of Co, Fe, Cr, and Mn were significantly less than changes near sinks and defect clusters when irradiated with nickel ions with similar doses in other studies at temperatures close to the halfmelting temperature of nickel HEAs. The RBS study showed a uniform distribution of atoms in depth and resistance to segregation in CoCrFeNi, CoCrFeMnNi when irradiated with helium ions.

Effect of deformation nanostructuring on ion-beam erosion of copper

The effect of deformation nanostructuring on ion-beam erosion of copper at high fluences of irradiation with 30 keV argon ions was experimentally studied. Deformation nanostructuring by high-pressure torsion was used to form an ultrafine grained structure with a grain size of ~0.4 µm in copper samples with an initial grain size about 2 µm. It was found that when a layer of thickness comparable to the grain size was sputtered, a steady-state cone-shaped relief was formed on the copper surface, the appearance of which did not change with increasing irradiation fluence. It has been shown that the smaller the grain size in copper, the greater the concentration and the smaller the cone height on the surface. The cone inclination angles, close to 82°, as well as the sputtering yield of 9.6 at./ion, practically does not depend on the copper grain size, the thickness of the sputtered layer, and the irradiation fluence. Calculations using the SRIM code showed that when taking into account the sputtering of atoms from the walls of the cones, the sputtering yield of a cone-shaped copper relief Үc, was 3.5 times less than the yield of a single cone, 1.2 times greater than the sputtering yield of a smooth surface, and the value of 9.25 at./ion was close to the experimentally measured one.

Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers

Considering the future applications of the ultra-wide bandgap semiconductor β-Ga2O3 in high-performance electronic devices and aerospace, the effects of low fluence 212 MeV Ge swift heavy ion (SHI) irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers have been studied in this work. The alternations in Raman scattering properties of the epitaxial layer after Ge SHI irradiation indicate the generation of lattice defects. The increased concentration of oxygen vacancies after irradiation leading to an enhanced area ratio of the yellow-red emission band in the PL spectrum of the β-Ga2O3 epitaxial layer. Simultaneously, the PL intensity quenches as the irradiation fluence increases, attributed to the generation of non-radiative recombination centers. Furthermore, HRTEM analysis provides direct evidence of lattice damage caused by 212 MeV Ge SHI irradiation to the samples. The results demonstrate that the spectral behaviors of β-Ga2O3 epitaxial layers can be modulated by low fluence Ge SHI irradiation with less damage caused to the overall crystalline quality and structure.

1 MeV electron irradiation effect and damage mechanism analysis of flexible GaInP/GaAs/InGaAs solar cells

In this study, the degradation behavior of flexible GaInP/GaAs/InGaAs (IMM3J) solar cells and their metamorphic subcells under 1 MeV electron irradiation was investigated. The remaining factors such as short-circuit current density (Jsc), open-circuit voltage (Voc), and maximum power (Pmax) were 95.62, 85.52, and 79.73%, respectively, at an irradiation fluence of 2 × 1015 e/cm2. The spectral responses of the InGaAs and GaAs subcells degraded significantly, and the InGaAs subcell experienced greater degradation than the GaAs subcell after irradiation. In addition, the current-limiting unit was switched from GaInP to InGaAs after irradiation. Defect analysis by deep-level transient spectroscopy (DLTS) revealed that with increasing irradiation fluence, the defects that had the greatest impact on the performance of GaAs subcells were EV + 0.36 and EV + 0.42 eV. For InGaAs subcells, the defects that had the greatest impact on the performance were EV + 0.29 and EV + 0.24 eV. The decrease in the minority carrier lifetime is the main reason for the decrease in the electrical performance of solar cells, and the variation in the effective minority carrier lifetime (τeff) in the subcells with the irradiation fluence was calculated based on the DLTS results. At a fluence of 2 × 1015 e/cm2, the τeff of the GaAs and InGaAs subcells decreased from 2.93 × 10−10 and 9.10 × 10−10 s to 1.56 × 10−11 and 1.60 × 10−12 s, respectively. These results provide a reference for predicting the degradation of short-circuit current and open-circuit voltage of flexible IMM3J.

Defect analysis of 1-MeV electron irradiated flexible InGaAs solar cells by deep-level transient spectroscopy and photoluminescence

1-MeV electron irradiated InGaAs flexible solar cells were investigated based on solar cell I–V characteristics, external quantum efficiency, photoluminescence, and deep-level transient spectra (DLTS) mesurements. The electrical parameters of the solar cells, including Rs and Rsh, were extracted from the I–V curves. With an increase in irradiation fluence, the electrical and optical characteristics of the solar cells continuously degraded. The Voc, Isc, and Pmax values decreased to 83.16%, 81.96%, and 68.88% of their initial values, respectively, when the irradiation fluence was increased to 2 × 1015 e/cm2. Photoluminescence (PL) emission peak intensity decreased to 0.54% of its original value, and the minority carrier lifetimes derived from fitting PL emission spectra were reduced to 1.25%. DLTS technique was used to analyse the irradiation-induced defect properties. Similar fitting values for the minority carrier lifetimes were obtained from the PL and DLTS measurements.

The effects and mechanisms of 2 MeV proton irradiation on high bias conditions of InP/InGaAs DHBTs

In this work, a 2 MeV proton irradiation experiment has been carried out on self-fabricated InP/InGaAs heterojunction bipolar transistors (HBTs) with fluence of 5 × 1013 H+/cm2 and 1 × 1014 H+/cm2. The degradation and mechanisms have systematically been studied under different bias conditions. The irradiated InP-based HBTs have suffered more sever degradation at low and high bias voltages with larger damage coefficient of current gain (Kβ), due to the increased base recombination current and the slacken collector current respectively. Under high injection current densities, the slow-down of collector current and the collapse of current gain (β) have occurred at increasingly smaller biases as irradiation fluence increases. Consistently, the ideality factor of base current collapses to 1 at high injection current, moreover, the collapse point decreases as fluence increases. The aggravated degradation at high current densities is attributed to the influence of heterojunction barrier effect (HBE) by the structure of the multi-layer collector region. The study would be of great significance for optimizing the device structure and improving the irradiation tolerance.

Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation

The displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase significantly after irradiation, while the capacitance of the device decreases slightly after irradiation, where the spectral response parameters are less affected by irradiation. The increase in dark current is essentially linear with the displacement damage dose. Finally, the effect of proton irradiation on the optical communication system is simulated and the results show that the bit error rate of the system increases with the increase in irradiation fluence, which seriously affects the sensitivity of the optical communication system.

Formation and self-organisation of nano-porosity in swift heavy ion irradiated amorphous Ge

Nano-porosity in amorphous Ge formed by swift heavy ion irradiation displays a peculiar self-organisation process. Initially almost randomly distributed pores grow with increasing irradiation fluence and segregate in layers orientated parallel to the sample surface. This self-organisation mechanism depends on the ion energy, thickness of the amorphous Ge layer and the angle of ion incidence and shows a characteristic length depending on ion energy and irradiation angle. Molecular dynamics simulations of individual ion tracks show that voids form due to the transition from the low-density amorphous to the high-density liquid phase, which also gives rise to a flow directed away from large pores and surfaces. The flow results in a characteristic distance from surfaces and larger pores, below which new voids do not form, and supports the formation of voids at the amorphous/crystalline interface. Simulations also demonstrate that, while direct impacts can reposition small voids, partial or nearby impacts promote their growth at the same location. These processes are plausible drivers for the self-organization.

Influence of ion‐induced lattice stress and phase transition on the irradiation resistance of high‐entropy ceramics

AbstractThe influence of ion irradiation on intrinsic lattice stress and phase transition is closely related to the irradiation resistance of high‐entropy ceramics. In this study, the ion‐induced response of high‐entropy‐stabilized o‐(ZrHfTiSn)O2 ceramic was investigated under Au2+ irradiation with different fluences. The results revealed that high‐fluence irradiation caused the minimal (orthorhombic‐to‐triclinic) phase transformation underneath the ion‐induced amorphous layer via. fast fourier transformation (FFT) pattern. The cation recombination led to cation rearrangement followed by the increase of lattice expansion induced stress. The lattice stability of residual crystal grains in the mixed layer was significantly improved after lattice rearrangement. This was evidenced by the fact that the X‐ray diffraction profile of the lattice remained unchanged, whereas the selected area electron diffraction (SAED) image exhibited drastic variations with the increase of irradiation fluence. Therefore, irradiation‐induced lattice rearrangement seems to be a reliable way to improve radiation resistance of high‐entropy ceramics.

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

The effects of electric polarization and defect energy levels induced by C4+ irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes (SBDs) are discussed. The parameters of the SBDs were extracted from capacitance–voltage (C–V) and current–voltage (I–V) measurements, the deep level transient spectroscopy (DLTS) was used to identify defect energy levels. In addition, the dielectric function and energy band structure of 4H-SiC were calculated using a first-principles approach to verify the enhancement of polarization and the origin of the defect energy levels. The results show that the net (donor) carrier concentration (N d) increases with the increase of irradiation fluence, which is caused by the competition between irradiation-induced defects and the polarization effect. On the one hand, Z 1/2 is determined by DLTS. It is related to the doubly negatively (2-|0) charged state of V c (carbon vacancy), which is a double acceptor. The intensity of the Z 1/2 peak increases with increasing irradiation fluence, which means that the defects caused by irradiation should reduce the N d. On the other hand, the polarization effect does exist and it becomes stronger with the increase in the irradiation fluence, which makes the N d increase. Obviously, the polarization effect induced by the irradiation is dominant for N d when the depth of ion penetration is in the shallow layer behind the metal–semiconductor (M–S) interface. Irradiation induced electron traps and an uneven distribution of positively charged centers, which can cause ln(I)-V to exhibit a non-linear component before reaching the turn-on voltage. The series resistance (R s), reverse current (I R) increase and the forward current decreases with the increase in irradiation fluence. All these show that the irradiation causes degradation of Ni/4H-SiC SBD performance.

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding in the context of future high luminosity high energy physics experiments, wide-bandgap materials such as 4H-SiC could offer better performance due to low dark currents and higher atomic displacement thresholds. In this work, the detector performance of 50 µm thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1 × 1016 neq/cm2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. A calibration of the absolute number of collected charges was performed using a GATE simulation. The obtained results are compared to previously performed UV transient current technique (TCT) studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. At fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2, CCEs of 64 % and 51 % are obtained, decreasing to 15 % at 5 × 1015 neq/cm2. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias, roughly 600 V and 900 V for neutron fluences of 5 × 1014 neq/cm2 and 1 × 1015 neq/cm2. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.

Characterization of microstructure and hardening of SiC ceramic brazed joint using TiZrCuNi filler irradiated by He ions

SiC ceramic brazed joints for fissile fuel cladding tube have attracted significant interest, but the lack of evaluation of the irradiance resistance has brought serious obstacles to their application in nuclear power. Herein, we propose the experimental study of He-ion irradiation on the interface phases between SiC substrate and TiZrCuNi brazing filler. The microstructure and hardness evolution of each phase at the interface were investigated under different irradiation fluences at room temperature, and the irradiation effects caused by He ion irradiation, such as amorphous and helium bubble, were elucidated. It was revealed that SiC and (Ti,Zr)2(Cu,Ni) were amorphous with the increase of irradiation fluence, while (Zr,Ti)C was not amorphous but produced a large number of dislocation defects. In terms of irradiation hardening, it was affected by the coupling effect of amorphous and helium bubble defects.

Enhancement of perpendicularly magnetized τ-phase in Mn/Al bilayer thin films by swift heavy ion irradiation

This paper reports the swift heavy ion irradiation-induced tailoring of the structural and magnetic properties of the Mn/Al bilayer thin films. Mn/Al bilayer thin films were deposited on Si substrates by the evaporation technique, and as-deposited films were irradiated by a 100 MeV Ag ion beam with two distinct fluences. The molar fraction of τ- phase was enhanced at higher irradiation fluence, as revealed by the XRD and magnetic results. The average crystallite size was increased with the increase in irradiation fluence and obtained in a range of 11 to 14 nm. The magnetic hysteresis curves measured at 300 K confirmed the improvement in the ferromagnetic properties and the perpendicular magnetic anisotropy in these films. The enriched ferromagnetic properties were obtained in the perpendicular direction for the film irradiated at higher fluence, with the saturation magnetization ∼ 44 emu/cc, and coercivity ∼ 1590 Oe measured at the low temperature (5 K). These modified magnetic properties in Mn-Al alloy thin films are advantageous for their applications in spintronics and high-density magnetic memory devices.

Li3+ ion beam irradiation persuaded enhancement in the thermodynamic parameters of a hydrogen-bonded liquid crystalline material

Effect of ion beam irradiation has been investigated in the thermodynamic parameters of a hydrogen-bonded liquid-crystalline material by differential scanning calorimetry. Thermodynamic data suggest that the phase transition temperatures are decreased for a low fluence of irradiation and thereafter increase with the increase in irradiation fluence. The average transition enthalpies and entropies are increased for a low fluence of irradiation and are decreased for higher fluences of irradiation.

100 Mev Ag and 25 Kev He Induced Defects in 4H-SiC

We demonstrate the formation of radiative defects, known as color centres, in 100 MeV Ag and 25 keV He irradiated semi-insulating 4H-SiC using low-temperature (~77 K) photoluminescence (PL). In PL, the luminescence resulting from radiative recombination of photo-excited carriers (electrons and holes) is studied. In our work, a 266 nm deep UV excitation source is utilized for performing PL measurements. In the range, 850-1150 nm, the photoluminescent peaks ascribed to silicon vacancies (V Si) and unknown defect-related bands (UD3 and UD4) are observed after both ion irradiations. It has also been observed that till an optimum irradiation fluence there is an enhancement of photoluminescence from the ion irradiation-induced defects but further increase in irradiation fluence results in accumulation of photo-absorbing defects, providing pathways for non-radiative processes. In addition, ion irradiation has been shown to suppress the undesirable luminescence in the range 300-600 nm caused by the intrinsic defects in as-grown 4H-SiC.

Laser-Induced Graphitization of Diamond Under 30 fs Laser Pulse Irradiation.

The degree of laser-induced graphitization from a sp3-bonded to a sp2-bonded carbon fraction in a single crystal chemical vapor deposited (CVD) diamond under varying fluence of an ultrashort pulsed laser (30 fs, 800 nm, 1 kHz) irradiation has been studied. The tetrahedral CVD sp3 phase is found to transition to primarily an sp2 aromatic crystalline graphitic fraction below the critical fluence of 3.9 J/cm2, above which predominantly an amorphous carbon is formed. A fractional increase of fluence from 3.3 to 3.9 J/cm2 (∼20%) results in a substantially (∼3-fold) increased depth of the sp2 graphitized areas owing to the nonlinear interactions associated with a fs laser irradiation. Additionally, formation of a C═O carbonyl group is observed below the critical threshold fluence; the C═O cleavage occurrs gradually with the increase of irradiation fluence of 30 fs laser light. The implications for these findings on enhancement of fs driven processing of diamonds are discussed.

Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation

Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.