Increase In Band Gap Research Articles

Neutron Radiation Effects on the Performance of the CdSe Thin Film for Photodetector Applications

Cadmium Selenide CdSe thin films were deposited on (7.5×1.3×0.1 cm3) glass substrates and (1×1 cm2) p-type silicon substrates using pulsed laser deposition technique (Nd: YAG laser beam with 80 mJ energy, λ = 1064 nm). Then, they were annealed at 300 °C for 1 h to get diodes as visible light detectors. Some of these samples (diodes) were exposed to different intervals (5, 7, 9, 12) days of neutron radiation using (241Am -10Be) source with a flux of 3×105 n/cm2.s and energy of 5.71 MeV. For comparison purposes, the other diodes were kept without any irradiation The morphological and electrical properties of these samples were studied by XRD, FE-SEM and I-V measurements. Results have shown all these thin films exhibit a hexagonal structure. However, there is a slight shift in the preferred orientation (100) for the irradiated films. Also, there was a new (102 - SiO2) peak that appeared in the irradiated thin film pattern. The crystallite size of pristine and (5, 7, 9, 12) days irradiated CdSe thin films were (26.9, 18.3, 24.9, 20.3 and 24.5) nm respectively, whereas, the mean particle size of the pristine film was 37 nm whereas for the irradiated films 53, 64, 73 and 92 nm. Results also show that the band gap of these samples increased from 2.17 eV for pristine thin films to 2.3, 2.48, 2.25, and 2.3 eV for the irradiated thin films. On the other hand, the results of I-V characteristics show the dark/light current. The current under illumination increases when exposed to small values of neutron radiation then it decreases with higher values of exposure. In contrast, the dark current decreases significantly with the irradiation. The effect of the irradiation was clear on the response/recovery period for all devices. Nevertheless, it was more profound in the response/recovery time of pristine devices. Also, the photo-responsivity of the pristine device was larger than the other devices and it was decreased with increasing absorbed doses. HIGHLIGHTS Hexagonal Structure: All CdSe thin films (both pristine and irradiated) exhibit a hexagonal structure, with a slight shift in orientation due to neutron irradiation. Neutron Radiation Impact: Neutron radiation causes a significant shift in crystallite size, decreasing the size for irradiated films. Additionally, a new (102 SiO2) peak emerges in irradiated samples, indicating radiation-induced changes. Band Gap Increase: The optical band gap of the CdSe films increased with neutron irradiation, starting from 2.17 eV in pristine films to values as high as 2.48 eV after irradiation. Morphological Changes: Irradiated films showed increased grain sizes, with neutron exposure leading to the enlargement of mean particle sizes from 37 nm in pristine samples to 92 nm in the most heavily irradiated samples. Electrical Behavior: Neutron irradiation impacted the photodetectors' electrical properties. The light current initially increased with small neutron doses but decreased with higher doses, while dark current consistently decreased after irradiation. GRAPHICAL ABSTRACT

Toward Water-Resistant, Tunable Perovskite Absorbers Using Peptide Hydrogel Additives.

In recent years, hydrogels have been demonstrated as simple and cheap additives to improve the optical properties and material stability of organometal halide perovskites (OHPs), with most research centered on the use of hydrophilic, petrochemical-derived polymers. Here, we investigate the role of a peptide hydrogel in passivating defect sites and improving the stability of methylammonium lead iodide (MAPI, CH3NH3PbI3) using closely controlled, in situ X-ray photoelectron spectroscopy (XPS) techniques under realistic pressures. Optical measurements reveal that a reduction in the density of defect sites is achieved by incorporating peptide into the precursor solution during the conventional one-step MAPI fabrication approach. Increasing the concentration of peptide is shown to reduce the MAPI crystallite size, attributed to a reduction in hydrogel pore size, and a concomitant increase in the optical bandgap is shown to be consistent with that expected due to quantum size effects. Encapsulation of MAPI crystallites is further evidenced by XPS quantification, which demonstrates that the surface stoichiometry differs little from the expected nominal values for a homogeneously mixed system. In situ XPS demonstrates that thermally induced degradation in a vacuum is reduced by the inclusion of peptide, and near-ambient pressure XPS (NAP-XPS) reveals that this enhancement is partially retained at 9 mbar water vapor pressure, with a reduced loss of methylammonium (MA+) from the surface following heating achieved using 3 wt % peptide loading. A maximum power conversion efficiency (PCE) of 16.6% was achieved with a peptide loading of 3 wt %, compared with 15.9% from a 0 wt % device, the former maintaining 81% of its best efficiency over 480 h storage at 35% relative humidity (RH), compared with 48% maintained by a 0 wt % device.

Optical sensing and nonlinear optical properties of Cr-doped MoO3/PEDOT:PSS Nanocomposites

In this study, we observed a negative UV photoresponse that switched to a positive photoresponse in Cr-doped MoO3/PEDOT:PSS nanocomposite films(NCF) prepared via drop-casting. MoO3 and Cr-doped MoO3 were synthesized using a hot oil bath co-precipitation method, combined with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)), and coated onto flexible OHP sheets. The open aperture z-scan method investigated the nonlinear optical properties of NCF on the glass substrate. The films were characterized by X-ray diffraction, scanning electron microscopic (SEM), UV–Vis spectroscopy, and Fourier Transformed Infrared (FTIR). Chromium doping caused minor changes in lattice parameters, crystalline size, and microstrain. UV spectroscopy revealed an increase in bandgap with higher Cr–MoO3 concentrations. The photoresponse of different Cr–MoO3 concentrations showed an initial current decrease under UV light, but the photoresponse became positive beyond a threshold and continued to improve. Nonlinear optical studies indicated saturable absorption in the nanocomposite. This work enhances our understanding of Cr-doped MoO3/PEDOT:PSS nanocomposites, contributing to advancements in flexible UV photodetectors and nonlinear optical applications.

Enhanced UV photodetector using Mg-doped ZnO sub-micro tube films synthesized through laser-assisted chemical bath growth

This study presents the fabrication of MgxZn(100-X)O thin films (TFs) with Mg concentration levels (x) of 0.5 at%, 1.0 at%, 1.5 at%, and 2.0 at% on glass substrates using the novel laser-assisted chemical bath growth (LACBG) method, aimed at investigating their photo-response for potential UV photodetector applications. Utilizing a continuous wave semiconductor laser with a 444.5 nm wavelength, 1 W power, and 6 min of irradiation, the LACBG method successfully produced high-quality Mg-doped ZnO TFs. These films were deposited on glass substrates coated with silver (Ag) to serve as electrode contacts for constructing a metal-semiconductor-metal (MSM) UV photodetector. The structural, optical, and electrical properties of the TFs were thoroughly analyzed. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to examine the crystal microstructures and surface morphologies, revealing vertically aligned hexagonal symmetrical sub-micro tubes. In contrast, energy dispersive X-ray (EDX) analysis confirmed successful Mg incorporation into the ZnO lattice. UV–visible absorbance spectra indicated a blue shift in the absorption edge and increased band gap energy from 3.24 eV to 3.67 eV with rising Mg content. The UV photodetectors, particularly those with 2.0 at% Mg-doped ZnO TFs, demonstrated significantly enhanced UV responsiveness attributed to optical confinement, high surface-to-volume ratio, and superior structural quality. Performance metrics for the 2.0 at% Mg-doped ZnO TFs included a responsivity of 10.60 A/W, external quantum efficiency of 34.10, specific detectivity of 2.25 × 107 Jones, noise equivalent power of 5.34 × 10−11 W, rise time of 86.9 ms, and decay time of 324.4 ms. These findings underscore the potential of Mg-doped ZnO TFs for high-performance UV photodetection applications. The novelty of this study lies in utilizing LACBG to achieve high-quality Mg-doped ZnO TFs, offering a cost-effective, low-temperature method that enhances UV photodetector performance.

Effects of Al doping on structural, optical, morphological, and low-concentration CO2 gas sensing properties of ZnO nanoparticles synthesized by sol-gel method

Abstract This work examines the morphological, structural, optical, and gas-sensing characteristics of ZnO thin films doped with Al that were created by the sol-gel spin coating technique. The thin films, doped with varying aluminum concentrations (0%, 2%, and 5%), were characterized using XRD, UV-visible spectroscopy, and FE-SEM to assess their crystallinity, band gap, and surface morphology. XRD analysis confirmed the incorporation of Al into the ZnO lattice without forming secondary phases, while UV-visible spectroscopy revealed an increase in transmittance and band gap with higher Al doping. FE-SEM images showed a transition from agglomerated grains to smoother surfaces with increased Al content. Gas sensing performance was evaluated using low-concentration CO2 as the target gas. The results demonstrated that Al doping significantly enhances the CO2 sensing response, with the 5% Al-doped ZnO exhibiting the highest sensitivity due to increased carrier concentration and improved surface interaction. These findings suggest that Al-doped ZnO thin films are promising candidates for efficient CO2 gas sensors, combining enhanced structural and optical properties with superior gas sensing capabilities.

Epitaxial growth and band offsets of β -(ScxGa1− x)2O3 thin films grown on (100) β -Ga2O3 substrate

β-(ScxGa1−x)2O3 (x = 0–0.36) thin films were epitaxially grown on (100) β-Ga2O3 substrates by oxygen-radical-assisted pulsed-laser deposition. β-(ScxGa1−x)2O3 epilayers were coherently strained up to x = 0.30, although the presence of a structural disorder was implied when x > 0.2. The bandgap energies measured by reflection electron energy loss spectroscopy increased from 4.56 to 5.25 eV with increasing Sc content. In β-(ScxGa1−x)2O3 epilayers, a slightly negative bandgap bowing behavior with a bowing parameter of −0.4 eV was observed, resulting in a larger bandgap increase than in β-(AlxGa1−x)2O3 epilayers with identical x. X-ray photoemission spectroscopy measurement revealed that the valence-band and conduction-band offsets of β-(Sc0.17Ga0.83)2O3 epilayer with respect to β-Ga2O3 were 0.0 and 0.3 eV, respectively.

Explication of the luminescent and optically active RE3+ triply-doped silica phosphate glass films for photonic applications

The multi-component silicate glass films triply-doped with Er3+/Yb3+/Nd3+ were fabricated by spin coating technique. X-ray diffraction revealed a cristobalite phase in the glasses doped above 0.6 mol% of Nd3+. The transparency of the films increases with the addition of the co-dopant, due to the increase in optical band gap by the Burstein-Moss shift. The high value of the correlated color temperature of the blue emission indicates enhanced visual perception, suggestive of cool blue film lasers. The red emission from upconversion exhibits potentiality for flat display panels. The gain cross-section of the glass with 0.6 mol% of Nd3+ was 13.54 ×10−20 cm2 which makes it ideal for NIR film lasers in the S-band region. The Inokuti-Hirayama model predicts luminescence quenching due to dipole-dipole interactions in the glasses co-doped beyond 0.6 mol% of Nd3+. The 4F9/2→4I13/2 transition observed in the films, suggests their suitability for O + E + S band NIR film lasers in telecommunication sectors.

Solution-processed Tb: Zr co-doped In2O3 thin film transistor and its dual effect on improving photostability

In this paper, Tb: Zr co-doped In2O3 TFTs were fabricated using an aqueous route. The dual effect of Tb: Zr co-doping on improving photostability was addressed. At a 5 mol% co-doping concentration, the ΔVth under NBIS first decreased and then increased as Tb: Zr ratio increased. The optimized co-doped sample (1: 2) showed a ΔVth of −3.22 V, compared to the undoped sample of −9.5 V and the single-doped samples (1: 0 and 0: 1) of −4.4 V and −4.15 V respectively. The defect state was evaluated using μ-PCD. The peak value and τ2 first decreased and then increased with an increase in Zr ratio, and reached their minimum values when the Tb: Zr co-doping ratio was 2: 1 and 1: 2, respectively. This suggested that co-doping can introduce more deep level states for the rapid recombination of photogenerated carriers and reduce shallow level states, leading to superior photostability of the co-doped devices. Further characterization by UV-Vis and XPS indicated that the increase in band gap and the decrease in oxygen vacancy were also contributing factors to improved device stability. These results highlight the great potential of solution-processed Tb: Zr co-doped In2O3 TFT for applications in low-cost and high-stability electronics.

Influence of gadolinium doping on structural, optical, and magnetic properties of CuS nanostructures

To examine the effect of rare earth ions on CuS nanostructures, a series of Gadolinium-doped copper sulphide (Cu1-xGdxS) nanostructures were synthesized through the hydrothermal method. These nanostructures were prepared at x = 0, 1, 3, 5, and 7 at. % concentrations. The prepared samples’ structural, optical, and magnetic characteristics were investigated. Powder X-ray diffraction and Raman analysis were performed to examine the structural analysis of the samples and confirm the existence of a covellite phase hexagonal structure. XPS analysis was conducted to study the valence states. Observations of the surface morphology study from FESEM reveal the formation of flower-shaped structures resembling nanospheres, while at lower magnification nanoflakes were observed. Optical reflectance spectra were recorded using UV–Vis spectroscopy, which showed the increase in bandgap as the concentration of Gd rises. The fluorescence spectrophotometer was utilized for the analysis of room-temperature photoluminescence. The prepared samples showed significant emission peaks at 435 nm. Fluorescence lifetime studies were carried out to confirm the fluorescence decay of CuS nanostructures doped with Gd. Magnetic measurements revealed that prepared samples exhibit an unexpected superparamagnetic nature at room temperature.

Effects of fluorine atom numbers on electrochromic properties of the benzothiadiazole-based D-A polymers

In this work, two fluorinated D-π-A-π-D type monomers, F-EDOT and FF-EDOT, were facilely synthesized by donor-acceptor-donor method via Stille coupling reaction, with monofluorinated benzothiadiazole and difluorinated benzothiadiazole as the acceptor units and 3,4-ethylenedioxythiophene (EDOT) as the donor units. The electrochemical polymerization behavior of the fluorinated monomers, electrochemical and electrochromic properties of the corresponding fluorinated D-A polymers were compared to study the effects of different fluorine atom numbers on the optoelectronic properties of the monomers and their resultant D-A polymers. The results show that the introduction of more F atoms into the conjugated backbone increases the oxidation potential of monomers, both of them have low initial oxidation potential (0.65 V/0.70 V). As in the case of monomers, the substitution of more F atoms also leads to the decreased HOMO energy level of the polymers, thus leading to the increased band gap energy of P(FF-EDOT) (1.39 eV). This result can be attributed to the deviation of planarity and the reduced effective conjugate length. As prepared fluorinated D-A polymers also have good adhesion on the electrode surface, favorable redox activity, and outstanding redox stability (the redox activity of P(F-EDOT) remains 99 % after 1000 cycles). At the same time, the fluorinated D-A polymers also show distinguish electrochromic properties under various external potentials; both the optical contrast and coloration efficiency decreased with the increase of F atom numbers, and the corresponding response time increased. As a result, both the fluorinated D-A polymers show light green in the neutral state, P(F-EDOT) shows more obvious electrochromic performance in the near infrared region (optical contrast: 35.02 %, coloration efficiency: 159.94 cm2 C−1, and quick response time: 0.2 s), accompanied with excellent discoloration stability and optical memory effect. The study of novel fluorinated-based electrochromic materials further expands the selection of acceptor units and the application prospect of electrochromic materials.

High-pressure synthesis, structure and physical properties of two quasi-one-dimensional compounds Ba9Nb2.54Te15 and Ba9Ta1.89Te15

Two quasi-one-dimensional compounds Ba9Nb2.54Te15 and Ba9Ta1.89Te15 were synthesized under high pressure and high temperature conditions and systematically characterized by structural, transport and magnetic measurements. Both the two compounds crystallize into a hexagonal structure with the space group P-6c2 (No. 188). The structure consists of trimeric face-sharing octahedral Nb/TaTe6 chains separated by a large distance (>10 Å), thus presenting a strong one-dimensional crystal structure. The transport properties suggest that both the two compounds are semiconductors with a band gap ∼ 0.15 eV for Ba9Nb2.54Te15 and ∼ 0.22 eV for Ba9Ta1.89Te15. Magnetic properties characterization indicates that Ba9Nb2.54Te15 displays no long-range-order above 2 K, but with an effective moment μeff ∼ 1.8 μB/f.u., while Ba9Ta1.89Te15 exhibits a diamagnetic behavior. Our results demonstrate that, in the sequence of Ba9V3Te15, Ba9Nb2.54Te15 and Ba9Ta1.89Te15, the occupation in the transition metal sites decreases, the semiconducting band gap increases, and the magnetism changes from ferromagnetism to diamagnetism.

Ultrahigh Energy Storage in (Ag,Sm)(Nb,Ta)O3 Ceramics with a Stable Antiferroelectric Phase, Low Domain-Switching Barriers, and a High Breakdown Strength.

AgNbO3 (AN) antiferroelectrics (AFEs) are regarded as a promising candidate for high-property dielectric capacitors on account of their high maximum polarization, double polarization-electric field (P-E) loop characteristics, and environmental friendliness. However, high remnant polarization (Pr) and large polarization hysteresis loss from room-temperature ferrielectric behavior of AN and low breakdown strength (Eb) cause small recoverable energy density (Wrec) and efficiency (η). To solve these issues, herein, we have designed Sm3+ and Ta5+ co-doped AgNbO3. The addition of Sm3+ and Ta5+ reduces the tolerance factor, polarizability of B-site cations, and domain-switching barriers, enhancing AFE phase stability and decreasing hysteresis loss. Meanwhile, adding Sm3+ and Ta5+ leads to decreased grain sizes, increased band gap, and reduced leakage current, all contributing to increased Eb. As a benefit from the above synergistic effects, a high Wrec of 7.24 J/cm3, η of 72.55%, power density of 173.73 MW/cm3, and quick discharge rate of 18.4 ns, surpassing those of many lead-free ceramics, are obtained in the (Ag0.91Sm0.03)(Nb0.85Ta0.15)O3 ceramic. Finite element simulations for the breakdown path and transmission electron microscopy measurements of domains verify the rationality of the design strategy.

Stress-Dependent Optical Extinction in Low-Pressure Chemical Vapor Deposition Silicon Nitride Measured by Nanomechanical Photothermal Sensing.

Understanding optical absorption in silicon nitride is crucial for cutting-edge technologies like photonic integrated circuits, nanomechanical photothermal infrared sensing and spectroscopy, and cavity optomechanics. Yet, the origin of its strong dependence on the film deposition and fabrication process is not fully understood. This Letter leverages nanomechanical photothermal sensing to investigate optical extinction κext at a 632.8 nm wavelength in low-pressure chemical vapor deposition (LPCVD) SiN strings across a wide range of deposition-related tensile stresses (200-850 MPa). Measurements reveal a reduction in κext from 103 to 101 ppm with increasing stress, correlated to variations in Si/N content ratio. Within the band-fluctuations framework, this trend indicates an increase of the energy bandgap with the stress, ultimately reducing absorption. Overall, this study showcases the power and simplicity of nanomechanical photothermal sensing for low absorption measurements, offering a sensitive, scattering-free platform for material analysis in nanophotonics and nanomechanics.

Exploring the influence of Zn impurities on the structural, optical, and H2 sensor properties of ultrasonic spray pyrolysis-grown MgO thin films

Magnesium oxide (MgO) thin films, both pure and zinc (Zn) doped, were fabricated on soda lime glass substrates using ultrasonic spray pyrolysis. Zn was introduced at concentrations of 0.5 %, 1 %, 2 %, 4 %, and 8 %. The effects of these doping levels on the films' structural, morphological, optical, and H2 gas sensing properties were studied using XRD, SEM, EDAX, UV–vis spectroscopy, PL spectroscopy, gas sensing measurements, and XPS. The films showed a cubic crystal structure without secondary phases, and grain sizes generally decreased with doping. Morphological changes in nanocrystal shapes were noted due to impurities. Optimal doping enhanced MgO's absorbance, with a slight increase in bandgap. The PL spectra showed increased luminescent emissions with higher doping, due to defects from Zn ions. Pure films were responsive to H2 gas, while Zn-doped samples showed weaker responses. The XPS confirmed the expected chemical compositions.

Bottom-up Synthesis and Characterization of Porous 12-Atom-Wide Armchair Graphene Nanoribbons.

Although several porous carbon/graphene nanoribbons (GNRs) have been prepared, a direct comparison of the electronic properties between a nonporous GNR and its periodically perforated counterpart is still missing. Here, we report the synthesis of porous 12-atom-wide armchair-edged GNRs from a bromoarene precursor on a Au(111) surface via hierarchical Ullmann and dehydrogenative coupling. The selective formation of porous 12-GNRs was achieved through thermodynamic and kinetic reaction control combined with tailored precursor design. The structure and electronic properties of the porous 12-GNR were elucidated by scanning tunneling microscopy/spectroscopy and density functional theory calculations, revealing that the pores induce a 2.17 eV band gap increase compared to the nonporous 12-AGNR on the same surface.

First Principle Study of Tunnel Magnetoresistance of Various Oxide Materials

In this paper, the first principle study of tunnel magnetoresistance (TMR) for various oxide materials has been done. More than 30 materials have been taken into consideration and divided into four different categories based on their bandgap. The four categories are 2-4 eV bandgap materials, 4-6 eV bandgap materials, 6-8 eV bandgap materials, and 8-10 eV bandgap materials. The first principle simulations and the device-level simulations of various MTJ configurations were executed using the various oxide materials. The results reveal that maximum TMR ratio is observed in oxide materials having lower bandgap value and it reduces with the increase in oxide material bandgap. The maximum TMR ratio is observed in Cu2O material and minimum TMR is observed in BeO material. The oxide materials with bandgap less than 3ev are the best materials for device level fabrication and they provide 100% TMR for the oxide thickness up to 3 nm.

Synthesis and annealing effect of structural, morphology, optical, and magnetic properties of tin telluride (SnTe)

This study explored the structural, vibrational, morphological, optical, and magnetic characteristics of both as-grown and annealed single crystals of tin telluride (SnTe), employing diverse analytical techniques. X-ray powder diffraction (XRD) analysis shows the cubic lattice structure of SnTe with consistent lattice parameters across different temperatures, along with the phase transition phenomenon. Fourier Transform Infrared Spectroscopy (FTIR) elucidates temperature-induced shifts in vibrational modes, indicating sensitivity to thermal stimuli. Scanning electron microscopy (SEM) reveals layer-by-layer growth patterns and temperature-dependent variations in crystal morphology. Energy-dispersive X-ray analysis (EDAX) confirms the synthesized crystals' high purity and slight tellurium-rich composition. Optical band gap measurements demonstrate an increase in band gap upon annealing, attributed to valence band convergence. Field-dependent magnetization (M − H) curves exhibit ferromagnetic properties at ambient temperature, which escalate with increasing annealing temperature. Electron Paramagnetic Resonance (EPR) spectra reveal spin mobility and exchange coupling, with variations in the g-factor suggesting the presence of additional spin entropy. These observations offer significant insights into the complex properties of SnTe, which are crucial for its potential applications across various technological fields.

Strain-Driven Phase Transitions in Delafossite Cu1-xAxAlO2: A Key to Enhanced Photo(electro)catalytic Performance.

This study investigates the impact of intrinsic strain and phase transitions on the thermodynamic stability and electronic properties of Cu1-xAxAlO2 solid solutions, which are key to their photocatalytic performance. It is demonstrated that Cu1-xAxAlO2 with A = Ag, Au, Pt can form continuous isostructural solid solutions due to relatively small compressive strain, while a substantial increase strain restricts Cu1-xPdxAlO2 to forming only limited solutions. For A = Li, Na, the formation of heterostructural solid solutions is facilitated by structural motif alterations, accommodating significant differences in ionic radii and A-O bond characteristics. Specifically, Cu1-xLixAlO2 exhibits a phase transition at x ≈ 0.333, whereas Cu1-xNaxAlO2 undergoes three distinct phase transitions. Electronic structure analysis indicates that in Cu1-xAxAlO2 (A = Ag, Au), d10-d10 closed-shell interactions dominate, enabling tunable band gaps with varying solubility. Nevertheless, increased intrinsic strain in metal sublattices, as seen in A = Pd and Pt, shifts antibonding states to the Fermi level, inducing a semiconductor-to-metal transition. Experimental evidence confirms that Ag+ ions modulate the band gaps and carrier dynamics in Cu1-xAgxAlO2, with Cu0.75Ag0.25AlO2 exhibiting heightened photoelectrochemical activity and a 38.5-fold enhancement in H2 production rate over CuAlO2. Additionally, the coordination environment changes between alkali metals and O, induced by phase transitions, effectively tune the band edge positions and carrier dynamics of Cu1-xAxAlO2 (A = Li, Na) heterostructural solid solutions. Therefore, 3R-Cu0.97Li0.03AlO2 with asymmetric nonlinear dumbbell O-Cu-O demonstrates the highest photocatalytic H2 production activity, 72.9 times greater than CuAlO2. In contrast, α-Cu1-xAxAlO2 with a smaller CuO6 octahedral splitting energy exhibits increased band gaps, resulting in diminished photocatalytic activity. This research underscores that strain-driven phase transition provides an additional control factor and new mechanism for regulating the photo(electro)catalytic activity of Cu1-xAxAlO2 solid solutions.

Investigation on enhanced band-gap properties of 2D hierarchical phononic crystals

Phononic crystals have garnered considerable attention in recent years for their unique band-gap properties, which can effectively manipulate the propagation of acoustic and elastic waves. This research focuses on exploring richer band gaps and utilizing band gap characteristics to achieve structural vibration reduction. In this study, a novel two-dimensional (2D) hierarchical phononic crystal with rich periodicities is proposed, which possesses enhanced band-gap properties. The research method used for the proposed structure is numerical simulation using the finite element method (FEM). By applying Bloch’s theorem, FEM is a more convenient tool for calculating the band gap of structures. Based on the numerical results, it can be concluded that the band gaps of the proposed 2D hierarchical phononic crystal can be classified not just into full and directional band gaps, but also into more fascinating categories based on the vibration patterns of macro and micro unit cells, which are referred to as Type I, Type II and Type III band gaps. Furthermore, the impact of structural parameter variations on the band gap is also studied, and results indicate that appropriate adjustments to the structural parameters (such as the number of unit cell n, the angle θ and the length l1) can lead to low-frequency shift and bandwidth increase in certain band gaps. A prototype of the hierarchical phononic crystal is manufactured using the 3D printing technique. Vibration tests are conducted and the simulation and experimental results are compared to verify the vibration reduction performance of the 2D hierarchical phononic crystal. The important contribution of this study is to reveal an interesting band gap generation characteristic of 2D hierarchical phononic crystals, which is beneficial for promoting understanding of the band gap mechanism in periodic structures. The enhanced band-gap properties in hierarchical periodic structures provide more potentialities and possibilities for practical vibration and noise reduction applications.

Green fuel mediated Europium doped Lanthanum ferrites Synthesis, characterisation of and their application as photocatalyst and antibacterial agents

The focus of multiapplication of the nanomaterial is the recent research. Based on that the current work describes synthesis of nano Lanthanum ferrites doped with Europium (1 mol, 3 mol, 5 mol and 7 mol%) by cost effective biofuel combustion method, using Ocimum tenuiflorum extract as fuel. The doping possibly changed the size and morphology of the host as evident from results of XRD, SEM and TEM analysis. As there is increase in band gap from 2.2 to 2.5 eV for undoped to 5 mol% doped Europium which strongly supports the photocatalytic degradation of Congo Red dye in the UV and visible light. The 5 mol% doped Eu shows 65 % and 81 % in UV-light and Visible light respectively. The electrochemical studies indicates the accepted capacitance and semiconductor nature of synthesised nano ferrites. The antibacterial activity was tested against Escherichia coli and Staphylococcus aureus showed 5 mol% Eu doped LFO was more effective than other synthesized LFO.