ZnMgO, a direct wide-bandgap material with high exciton binding energy, has received widespread research attention in optoelectronics. However, its inherent n-type doping facilitates defect-related visible emission, which hampers the required luminescence properties in the UV region. Also, ZnMgO requires post-growth treatment which releases accumulated strain energy, modulates defect states, expands crystallite size, and augments ad-atoms interdiffusion, thereby affecting its bandgap. This work reports the influence of post-deposition annealing parameters like temperature and time on RF sputtered Zn0.85Mg0.15O thin films using rapid thermal annealing. The study showed that high temperature annealing aided Mg incorporation in ZnO lattice together with an increase in the grain size due to aggregation of grains. Highest activation energy, 78 meV, and narrowest line width, 34 meV, for D°X peak of 900 °C annealed film was obtained from photoluminescence study. Increasing annealing temperature also showed dissociation of bound exciton peaks into corresponding localized and delocalized exciton states.
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