In2O3 Content Research Articles

Вивчення змочування SnO2—In2O3-кераміки розплавами срібло—мідь

To improve the wetting of oxide ceramic with metals in addition to traditional dopands (Ti, Zr, Nb, etc.), which have a high chemical affinity to solid phase atoms, alternative active additions can also be used. In particular, it relates to non-metallic electronegative elements VIa—VIIa groups of the periodic system (O, S, Se, F, Cl, Br), which have a high affinity to electron. Such additives are able to reduce free surface energy at the liquid/gas and liquid/solid interfaces and in such a way improve the wetting. The SnO2—In2O3 system is the most optimal material for the layers of the so-called TCO (Transparent Conductive Oxide). Since the cost of metal indium and its compounds continues to grow and new technologies are actively developing, there is a need to find alternative TCO that would have less In2O3 content. That is why systems containing SnO2, doped by relatively small amounts of In2O3 were explored. Ag—Cu based fillers is often used to joint oxide materials. In this case, there is a significant effect of the additives of the third component on the activity of oxygen in liquid metal, which causes an increase in oxygen content directly in the melt. Specially synthesized high-dense ceramics based on SnO2, which was received by adding 5, 10, 20 or 40% (mass.) of In2O3 with subsequent sintering, were used for wetting experiments. The experimental data indicate that in vacuum and air copper, added to the silver melt, significantly improves wetting on all types of the studied ceramic substrates, as well as the wetting is improved with increasing of the In2O3 content in the substrate. A dense transition layer of about 10 μm, which contains a large amount of copper, is formed on the interfacial border. A similar phenomenon was observed at the inter-phase boundary of other oxide materials. The improvement of wetting is explained by an increase in the solubility of oxygen in the melt, which acts as an adhesive-active element, with the addition of copper and increased electronegativity of the substrate with increasing content of In2O3. Keywords: tin dioxide, indium oxide, semiconductor, wetting, contact interaction, metal melt.

One-pot synthesis of In2O3/ZnO nanocomposite photocatalysts and their enhanced photocatalytic activity against cationic and anionic dye pollutants

An In2O3/ZnO nanocomposite was synthesized by co-precipitation and applied in the photocatalytic degradation of cationic and anionic dyes. The nanocomposite was characterized by X-ray diffractometry (XRD), Raman spectroscopy, X-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectrometry (EDS), surface area analysis and UV–visible diffuse reflectance spectrometry (UV–Vis DRS). The XRD, Raman and XPS analyses revealed that the nanocomposite was composed of two phases (In2O3 and ZnO). SEM images showed agglomerations of In2O3 and ZnO, and TEM images confirmed the adhesion of In2O3 nanoparticles to the surface of ZnO. The specific surface area of the nanocomposite increased from 5.86 to 8.41 m2/g with increments of In2O3 content. The optical bandgap energies of ZnO and In2O3 powders were 3.12 and 2.90 eV, respectively. The best photocatalyst was 2%In2O3/ZnO nanocomposite and the optimal dosage was 150 mg. Under UV irradiation, 92.17, 55.54 and 38.61% of MB, RhB and MO, respectively, were degraded over the 2%In2O3/ZnO nanocomposite. Since the point of zero charge of 2%In2O3/ZnO was about 6.6, MB and RhB were more completely degraded under basic conditions while MO was more completely degraded under acidic conditions. The possible charge transfer mechanism for photocatalytic degradation over the 2%In2O3/ZnO nanocomposite was proposed based on an active species test. The results showed that h+, •OH and •O2- species were the reactive species responsible for the photocatalytic degradation of MB, RhB and MO. The In2O3/ZnO nanocomposite could remove the cationic dyes from water in a neutral condition and exhibited good stability.

Effect of oxygen flow rate on properties of multilayer aluminum-doped indium saving ITO thin films produced by sputtering method

Multilayer aluminum-doped indium saving indium-tin oxide (ITO) thin films with low volume resistivity and high transmittance in the visible spectrum have been designed and fabricated by sputtering method. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and aluminum-doped indium saving indium-tin oxide layer with reduced to 50 mass % In2O3 content are discussed. Multilayer aluminum-doped ITO were deposited on glass substrates preheated at 523 K. Thin films deposited in pure argon demonstrate volume resistivity of 445 µΩcm, mobility of 26 cm2/V·s, carrier concentration of 5.6 × 1020 cm−3 and average transmittance larger than 85% in the visible range. Introducing oxygen to sputtering gas allowed increasing average transmittance of as-deposited multilayer aluminum-doped indium saving ITO thin films over 90% in the visible range. As-deposited multilayer aluminum-doped ITO thin films showed significantly higher transmittance in comparison with undoped ML ITO50/ITO90 and crystallized in In4Sn3O12 structure.

Stability and electronic properties of two-dimensional Ga2O3 and (MxGa1-x)2O3 (M = Al, Ga) alloys

The alloying of Ga2O3 monolayer with oxides of the same main group element (Al and In) is simulated by the special quasirandom structures method. The stability and electronic properties of the Ga2O3 monolayer and (MxGa1-x)2O3 monolayer alloys are systematically investigated by first-principles calculations. The (AlxGa1-x)2O3 monolayer alloy becomes more stable with the increase of Al2O3 content, but the stability of (InxGa1-x)2O3 monolayer alloy worsens with the increase of In2O3 content. The (AlxGa1-x)2O3 monolayer alloy has relatively better thermodynamic stability, which would be easily synthesized at room temperature. The orbital-projected band structure and charge density reflect that the effect of alloying Ga2O3 with Al2O3 and In2O3 on the electronic properties of materials is mainly on the conduction band. Interestingly, we find that the charge density of the VBM and CBM states for Ga2O3 monolayer and its monolayer alloys exhibit the characteristic of complete separation in real space, i.e., an abnormal carrier separation. Through the calculation of the band-gap bowings parameter, it is predicted that the band gap of the monolayer alloy can continuously be tuned in the range of 3.38 ∼ 7.02 eV. These results would shed some light on the application of the Ga2O3 monolayer and its monolayer alloys in optoelectronic devices.

Constructing Sn0.92In0.08O2–In2O3 heterostructure via the dual synergy for improving CO sensitivity

Improving the CO sensitivity for SnO2-based gas sensors has always been worthy of attention. Herein, we put forward a novel thought to enhance CO sensing performance via taking advantages of the large specific surface area of Sn0.92In0.08O2 (SI0.08O, x = 0.08) by doping modification and the heterojunction effect by combining SI0.08O with In2O3 to construct n-n heterostructure. For better distinguishing the respective contributions of In3+ doping and heterostructure construction on improving sensing performance of pristine SnO2 towards CO, SIxO (x = 0.01, 0.03, 0.05, 0.08 and 0.10) were firstly tested to determine the optimum In3+ doping concentration, then SI0.08O–In2O3 nanocomposites (SI0.08O-xINO, x = 20, 30, 40 and 50, which indicates respectively the mole percentage of In3+ in Sn4+ and In3+) were successfully prepared by grinding-annealing methods and the effect of In2O3 content on CO sensitivity was investigated. Among these materials, a superior gas sensitivity of SI0.08O–40INO was realized with the response value of 15.2 towards 3000 ppm CO, which was over 1.5 times that of SI0.08O, and the response time was 18s. Besides, by tuning the In2O3 content in SI0.08O-xINO, the selectivity towards CO could increase up to 5 times that of pristine SnO2. The improved gas sensing performance of SI0.08O–40INO was mainly ascribed to the large specific surface area, the successful construction of electronic transmission channel, the formation of abundant number of SI0.08O–In2O3 heterojunctions and the high grain boundary barrier at the interface between SI0.08O and In2O3. This work also realized the quantitative regulation of the ratio relationship between the In3+-doped SnO2 and In2O3 in binary heterostructured nanocomposites.

Indium-promoted znZrOx/nano-ZSM-5 for efficient conversion of CO2 to aromatics with high selectivity

The hydrogenation of CO2 to produce liquid hydrocarbons is an effective method for its resource utilization. However, due to the chemical inertness and multipath conversion of CO2, it is still a great challenge to efficiently convert CO2 to high value-added aromatic hydrocarbons. In this work, InZnZrOx and In-ZnZrOx samples with the same In2O3 content (10 wt%) were prepared by the co-precipitation and the incipient wet impregnation method, respectively. Nano-ZSM-5 zeolite was synthesized by a seed-induced template-free method. The bifunctional catalysts prepared by physically mixing InZnZrOx and nano-ZSM-5 zeolite can achieve aromatics selectivity of 90.6% (the proportion of tetramethylbenzene is 69.5%) among all hydrocarbons at a CO2 single-pass conversion of 13.8% under optimized reaction conditions of 3.0 MPa, 4000 mL·gcat.−1·h−1, H2/CO2 volume ratio of 3 and 320 °C. The selectivities to CO and CH4 are only 19.8% and 0.19%, respectively. Experimental results indicated that the formation of abundant oxygen vacancies and basic sites, achieving electron transfer from In and Zn ions to Zr ion, and improving mass transfer of nano-ZSM-5 zeolite results in the highest activity and aromatic selectivity over the InZnZrOx/nano-ZSM-5 bifunctional catalyst. This work provided a highly efficient way for direct CO2 hydrogenation to tetramethylbenzene.

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes.

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

Microstructure and thermoelectric properties of In2O3/poly(3, 4-ethylenedioxythiophene) composites

Poly(3, 4-ethylenedioxythiophene) (PEDOT) has applications in many areas due to its exciting electrical performance and high stability. Since it has very low thermal conductivity, it is also a good organic thermoelectric material. However, the ZT value of pure PEDOT is rather low, because the electrical properties such as conductivity are still not satisfactory. It is found that the thermoelectric performance can be enhanced by adding inorganic thermoelectric materials into PEDOT to form composites. In this paper, we synthesize a composite of In2O3/PEDOT by chemical oxidation. Microstructure of the composite is studied by X-ray diffraction, infrared spectroscopy, transmission electron microscope, and positron annihilation spectroscopy. The XRD measurements show that the pure PEDOT sample is amorphous, and the crystallinity in composite sample is contributed by In2O3. Besides, the diffraction peaks become sharper with increasing the In2O3 content. Transmission electron microscope measurements confirm that the PEDOT sample is amorphous and the shapes of In2O3 particles are regular. The surfaces of the In2O3 particles are wholly coated with thin layers of PEDOT, and when the In2O3 content is higher than 22 wt%, the In2O3 particles cannot be uniformly dispersed in pure PEDOT layers. The positron annihilation measurements reveal the interface structure in the In2O3/PEDOT composite, which can capture positron and cause the lifetime of positron to increase. The relative quantity of interface increases with In2O3 content increasing. However, when the In2O3 content is more than 22 wt%, the interface structure is destroyed. All the measurements show that when the In2O3 content is lower than 22 wt%, the In2O3 nanoparticles are well dispersed in PEDOT. The electrical conductivity of In2O3/PEDOT composite increases with In2O3 content increasing. At room temperature, the electrical conductivity of PEDOT is 7.5 S/m, while in the In2O3/PEDOT sample with 12.3 wt% In2O3, a maximum electrical conductivity of 25.75 S/m is obtained. When the In2O3 content increases from 0 to 22 wt%, the power factor of the composite increases rapidly from 14.5×10-4 to 68.8×10-4 μW/m·K2. On the contrary, the thermal conductivity shows decrease compared with the thermal conductivity of pure PEDOT. The ZT value of the composite increases from 0.015×10-4 to 0.073×10-4. Our results indicate that the thermoelectric properties of In2O3/PEDOT composite can be effectively improved compared with those of the pure PEDOT

NO2 Gas Sensing Properties of Nano-Sized In2O3 Doped WO3 Powders Prepared from Polymer Solution Route

In2O3 doped WO3 powders were prepared by a polymer solution route and their NO2 gas sensing properties were analyzed. The synthesized powders showed nano-sized particles with specific surface areas of 6.01~21.5 m2/g and the particle size and shape changed according to the content of In2O3. The gas sensors fabricated with the synthesized powders were tested at operating temperatures of 400~500 oC and 100~500 ppm concentrations of NO2 atmosphere. The particle size and In2O3 content affected on the initial sensor resistance in an air atmosphere. The highest sensitivity (8.57 at 500 oC), which was 1.77 higher than the sensor consisting of the pure WO3 sample, was measured in the 0.5 mol% In2O3 doping sample. In addition, the response time and recovery time were improved by the addition of In2O3.

Optical and Electrical Properties of (SnO<SUB>2</SUB>)<SUB>X</SUB>(In<SUB>2</SUB>O<SUB>3</SUB>)<SUB>1-X</SUB> thin Films Prepared by Pulse Laser Deposition Technique

In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO2:In2O3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In2O3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μH increase at 0.1 ratio then decrease with more In2O3 content.

Energy transfer and enhanced near-infrared emission in Er3+ ions doped composite containing In2O3 QDs

Er3+ ions doped transparent composite containing In2O3 QDs was successfully prepared by a melt-quenching route. Intense Er3+-related near-infrared (NIR) emission around 1534nm, important for optic telecommunication systems, was observed in the obtained composite. Impressively, the Er3+-related NIR emission was enhanced by 9 times with respect to the one without In2O3 content by optimal QDs size. Quantitative studies of steady-state and transient emission spectral data demonstrated that In2O3 QDs acted as sensitizers for the Er3+ emission. Furthermore, the influence of QDs size and Er3+ concentration on the sensitization efficiency was investigated in detailed. These results indicated that the obtained Er3+ ions doped composite containing In2O3 QDs could be a promising material for high-performance fiber amplifiers using broadband UV pumping.

Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

The authors demonstrate mobilities of >45 cm2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO2, instead of the more conventional 8–10 wt. %, and had varying ZrO2 content from 0 to 3 wt. %, with a subsequent reduction in In2O3 content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO2. The addition of ZrO2 yielded the highest mobilities at >55 cm2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.

Enhancement of the visible light photocatalytic activity of heterojunction In2O3/BiVO4 composites

Novel In2O3/BiVO4 heterojunction composite photocatalysts with tunable In2O3 content were prepared using a mild hydrothermal method. The structure, composition, and optical properties of the In2O3/BiVO4 composites were determined by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV–Vis diffuse reflectance spectroscopy, Brunauer–Emmett–Teller surface analysis, and X-ray photoelectron spectroscopy. Furthermore, photocatalytic activities of the as-prepared composites were investigated by studying the degradation of methylene blue (MB) solutions under simulated visible light irradiation (λ > 420 nm). It was found that the 50 % proportion of In2O3 in the In2O3/BiVO4 composite exhibited the highest photocatalytic performance, leading to 91 % decomposition of MB within 240 min of irradiation.

In2O3–ZnO nanocomposites: High sensor response and selectivity to ethanol

ZnO and its nanocomposites with In2O3 have been synthesized by a simple microwave-assisted co-precipitation method. The samples were characterized by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), powder X-ray diffraction (XRD), BET surface area measurement, and photoluminescence (PL) spectroscopy and used as sensors for detection of ethanol with remarkable response and selectivity and negligible response to CO and methane. The results show that proportions of In3+ and Zn2+ have significant effect on morphology, crystallite size, surface area, photoluminescence and sensing properties. As the In2O3 content of the samples increases, the BET surface area increases up to 4.7 times. The gas sensing mechanism of these sensors is discussed in details. The sensor with 0.02:1.0 and 0.08:1.0 molar ratios of In3+:Zn2+are highly sensitive and selective for the detection of ethanol.

Promoting Effects of In2O3on Co3O4for CO Oxidation: Tuning O2Activation and CO Adsorption Strength Simultaneously

The doping of In2O3 significantly promoted the catalytic performance of Co3O4 for CO oxidation. The activities of In2O3–Co3O4 increased with an increase in In2O3 content, in the form of a volcano curve. Twenty-five wt % In2O3–Co3O4 (25 InCo) showed the highest CO oxidation activity, which could completely convert CO to CO2 at a temperature as low as −105 °C, whereas it was only −40 °C over pure Co3O4. The doping of In2O3 induced the expansion of the unit cell and structural distortion of Co3O4, which was confirmed by the slight elongation of the Co–O bond obtained from EXAFS data. The red shift of the UV–vis absorption illustrated that the electron transfer from O2– to Co3+/Co2+ became easier and implied that the bond strength of Co–O was weakened, which promoted the activation of oxygen. Low-temperature H2-TPR and O2-TPD results also revealed that In2O3–Co3O4 behaved with excellent redox ability. The XANES, XPS, XPS valence band, and FT-IR data exhibited that the CO adsorption strength became weaker due to the downshift of the d-band center, which correspondingly weakened the adsorption of CO2 and obviously inhibited the accumulation of surface carbonate species. In short, the doping of In2O3 induced the structural defects, modified the surface electronic structure, and promoted the redox ability of Co3O4, which tuned the adsorption strength of CO and oxygen activation simultaneously.

Behavior of indium oxide in zinc phosphate and borophosphate glasses

The effect of indium oxide on the structure and properties of zinc phosphate and zinc borophosphate glasses has been investigated in the series (50−x)ZnO–xIn2O3–50P2O5 and 30ZnO–(20−x)B2O3–xIn2O3–50P2O5 with x = 0–20 mol% In2O3 in both series. Their physical properties were measured, and their structure was studied by Raman and NMR spectroscopy. Glass transition temperature in the phosphate glass series increases with increasing In2O3 content as well as their chemical durability. The observed changes in the 31P MAS NMR spectra with increasing In2O3 content revealed the depolymerization of phosphate chains due to the replacement of ZnO by In2O3 resulting in an increase in the O/P ratio in the glass structure. 11B MAS NMR spectra revealed the presence of BO4 units in the glass structure in the borophosphate glass series; these spectra give no evidence for the formation of B–O–In bonds. Their glass transition temperature slightly decreases with increasing In2O3 content. The values of the molar volume in these glasses do not change substantially when B2O3 is replaced by In2O3. This can be ascribed not only to differences in boron (BO4) and indium (InO6) coordination, but also to a higher ionicity of In···O bonds in comparison with B–O bonds. The obtained data resulted in the conclusion that indium oxide behaves as a modifying oxide in both glasses.

Synthesis, characterization and solar photocatalytic performance of In2O3-decorated Bi2O3

In2O3/Bi2O3 composite photocatalysts with different In2O3 content were prepared using a pore impregnation method with Bi2O3 as the substrate. The composite photocatalysts exhibit enhanced photocatalytic activity compared to Bi2O3 for the degradation of aqueous methyl orange (MO) solution under solar irradiation. The samples were characterized in terms of BET surface area, X-ray diffraction (XRD), UV/Vis diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), and surface photovoltage (SPV). On the basis of the results, a mechanism is proposed to account for the enhanced photocatalytic activity of these In2O3/Bi2O3 composites.

Ultrasonic aerosol spray-assisted preparation of TiO2/In2O3 composite for visible-light-driven photocatalysis

A TiO2/In2O3 composite photocatalyst has been prepared by using a facile ultrasonic aerosol spray (UAS)-assisted method. Results from scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and N2 adsorption–desorption measurements reveal that the as-prepared TiO2/In2O3 composite exhibits a porous structure and spherical morphology. The diameter ranges from tens of nanometers to several micrometers. According to the UV–vis diffuse reflectance spectra, the TiO2/In2O3 composite shows good visible-light absorption ability. The photocatalytic activity of the samples was evaluated by the decomposition of organic dyes in aqueous solutions under visible-light irradiation. All the composite samples show excellent photocatalytic performance. The effect of In2O3 content on the photocatalytic activity was also investigated. The best photocatalytic activity results from the TiO2/In2O3 sample with Ti:In molar ratio of 100:1. The UAS-assisted method can also be applied for the preparation of other composite semiconductor materials. It provides a general approach for scaling up the production of photocatalysts for practical applications.

Amorphous (In2O3)x(Ga2O3)y(ZnO)1−x−y thin films with high mobility fabricated by pulsed laser deposition

We prepared a series of (In2O3)x(Ga2O3)y(ZnO)1−x−y (0.7≤x≤0.8, 0.05≤y≤0.15) (IGZO) thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure. The structural, optical and electrical properties of the grown films were measured by various diagnosis tools. X-ray diffraction (XRD) patterns show that the mixing phase of crystalline and amorphous appears in the film with low In2O3 contents, and a completely amorphous phase appears in (In2O3)x(Ga2O3)y(ZnO)1−x−y (0.75≤x) thin films with high In2O3 content. The maximum carrier mobility was found to be 30cm2V−1s−1 in thin film with the (In2O3)x=0.8 content. The transmitted spectrum shows that thin films with the (In2O3)x=0.8 content exhibit better light transmission and narrow band gap. These amorphous IGZO thin films with high mobility and transparency are highly desirable for device fabrication on flexible substrates.

UV-shielding transparent PMMA/In2O3 nanocomposite films based on In2O3 nanoparticles

Self supporting poly(methyl methacrylate) (PMMA)/In2O3 with varying In2O3 content (1, 2, 5 and 10 wt% In2O3 loading) nanocomposite films have been prepared by solvent-casting and spin casting techniques. The nanocomposite films have been structurally characterized by X-ray diffraction (XRD), and Fourier transform infrared (FTIR) spectroscopy and the results confirm the incorporation of In2O3 nanoparticles in the PMMA matrix. The thermal properties of the nanocomposite films have been investigated by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The results show that the degradation of the polymer occurs at higher temperature in the presence of In2O3 nanoparticles and even a small amount of In2O3 nanoparticles (∼1 wt%) can greatly improve the thermal stability of PMMA. The UV-visible spectra of the nanocomposite films show that the films are UV-absorbing, and highly transparent in the visible region.