In2O3 Content Research Articles

A characterization on emission property of In2O3–SiO2 nanocomposite thin films

Nanocomposite thin films containing finely dispersed, crystalline In2O3 nanoparticles embedded in SiO2 matrix were fabricated by target-attachment sputtering method. Transmission electron microscopy observed single crystalline In2O3 nanoparticles uniformly embedded in SiO2 matrix of the samples with In2O3 content less than about 60vol.%. Photoluminescence spectra of the In2O3–SiO2 nanocomposite samples were found to comprise of the blue, green and red emissions. Analytical results indicated that the red and green emissions are correlated to the transitions from conduction band (CB) edge to the Ini••• and V‴In defect levels, respectively, while the blue emission is originated from the transition from CB edge to VO•• level or from VO• level to the valence band edge.

Heterostructured mesoporous In2O3/Ta2O5 composite photocatalysts for hydrogen evolution: Impacts of In2O3 content and calcination temperature

The crystallinity, textural characteristics, optical absorption properties, as well as the photocatalytic hydrogen production activities of three-dimensional interconnected mesoporous In2O3/Ta2O5 composites were investigated as functions of In2O3 content (x) and calcination temperature (T). The results show that the incorporation of In2O3 endows intimate heterostructured junctions in the composites and significantly improves the thermal stability of mesopores. With increasing x, the as-prepared composites possess similar textural properties and continuously increased light absorbencies, but a maximum heterojunction area, and thus, the optimal value for the average hydrogen evolution rate (Q¯H2) as well as the special surface hydrogen evolution rate (Q¯H2,S) at x=20%. For the 20% In2O3/Ta2O5 composites prepared at different T, the special surface area decreases and the pore size enlarges with increasing T from 450 to 650°C. An obvious collapse of mesopores accompanying with remarkable crystallization occurs at 750°C. The highest Q¯H2 occurs on the sample calcined at 550°C, while the optimal Q¯H2,S appears at 750°C. This suggests that good charge carrier separation and transport properties, rapid mass transfer of reactants and gases desorption are as important as large surface area and high crystallinity for the photocatalysts.

Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their In₂O₃ content (3.33-15.22 wt%). The ZIO films deposited with an In₂O₃ content of 9.54 wt% showed a relatively low resistivity of 9.13×10 ?4 Ω㎝ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the In₂O₃ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.

Low-Resistivity and High-Transmittance Indium Gallium Zinc Oxide Films Prepared by Co-Sputtering In2Ga2ZnO7 and In2O3 Targets

Indium gallium zinc oxide (IGZO) films are deposited on glass substrates by co-sputtering In2Ga2ZnO7 and In2O3 targets. The structural, electrical, and optical properties of the IGZO films have been discussed as functions of substrate temperature and rf power supplied to the In2O3 target (Prf, In2O3). From x-ray diffraction patterns, a halo peak around 34° is observed, which is attributed to the amorphous-like ZnkIn2O3+k structure. The electrical resistivity decreases with increasing substrate temperature and Prf, In2O3. The optimum resistivity is 7.16 × 10 -4 Ω-cm obtained at 175 ° substrate temperature and 20 W Prf,In2O3. The optical characteristics indicate that IGZO films are direct-transition type semiconductors. The optical band gap energy widens with increasing In2O3 content in the IGZO films. The optical transmittance of films deposited with 10-W Prf, In2O3 is higher than 99% in the wavelength region from 516 to 535 nm.

21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane

AbstractWe have fabricated the transparent bottom gate TFTs using Al and Sn‐doped zinc indium oxide (AT‐ZIO) as an active layer. The AT‐ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT‐ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing In2O3 content and post‐annealing temperature. The AT‐ZIO TFT exhibited afield effect mobility of 33 cm2/Vs, a sub‐threshold swing of 0.08 V/dec, and an on/off current ratio of more than 109 after Al2O3 passivation and post‐annealing. We have fabricated AMOLED panels with the bottom gate AT‐ZIO TFT back‐plane successfully.

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs even before annealing. The mobility increased with increasing the In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> content and postannealing temperature up to 250 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">deg</sup> C. The AT-ZIO TFT exhibited a field effect mobility of 30.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, a subthreshold swing of 0.17 V/dec, and an on/off current ratio of more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> .

Effect of the In₂O₃ content on the photodegradation of the alizarin dye using TiO₂-In₂O₃ nanostructured semiconductors

Effect of the In₂O₃ content on the photodegradation of the alizarin dye using TiO₂-In₂O₃ nanostructured semiconductors

Preparation of novel visible-light-driven In2O3–CaIn2O4 composite photocatalyst by sol–gel method

Novel visible-light-activated In2O3–CaIn2O4 photocatalysts were developed in this paper through a sol–gel method. The photocatalytic activities of In2O3–CaIn2O4 composite photocatalysts were investigated based on the decomposition of methyl orange under visible light irradiation (λ > 400 nm). The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrum (EDS), X-ray photoelectron spectroscopy (XPS) and UV–vis diffused reflectance spectroscopy (DRS). The results revealed that the In2O3–CaIn2O4 composite samples with different In2O3 and CaIn2O4 content can be obtained by controlling the synthesis temperature, and the composite photocatalysts extended the light absorption spectrum toward the visible region. The photocatalytic tests indicated that the composite samples demonstrated high visible-light activity for decomposition of methyl orange. The significant enhancement in the In2O3–CaIn2O4 photo-activity under visible light irradiation can be ascribed to the efficient separation of photo-generated carriers in the In2O3 and CaIn2O4 coupling semiconductors.

An In-depth Study of Supported In2O3 Catalysts for the Selective Catalytic Reduction of NOx: The Influence of the Oxide Support

The influence of the oxide support (i.e., Al2O3, Nb2O5, SiO2, and TiO2,) on the surface properties, reduction and oxidation properties, acid-base properties, and catalytic activity of supported indium oxide catalysts has been investigated by temperature-programmed reduction/oxidation, thermogravimetry coupled to differential scanning calorimetry, ammonia and sulfur dioxide adsorption calorimetry, and reduction of NOx by ethene in highly oxygen-rich atmosphere. Two series of In2O3-containing catalysts at low (approximately 3 wt %) and at theoretical geometric monolayer (from 20 to 40 wt %) In2O3 content were prepared and their properties were compared with unsupported In2O3 material. Supports able to disperse the In2O3 aggregates with high In stabilization gave rise to active catalytic systems. Among the studied oxide supports, Al2O3 and, to a lower extent, TiO2 were found to be the best supports for obtaining active de-NOx catalysts.

Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C

The nature and composition of oxides formed on InP, InGaAs, InAlAs, and on InGaAs/InAlAs heterostructures, both in planar and lateral configurations, was studied at temperatures in the range 300–500°C. These materials were oxidized in either oxygen, or moist air [air passed through water at 25 or 95°C; so-called “moist air (25°C)” or “moist air (95°C)”], or in moist N2 (N2 passed through water at 95°C; so called “moist N2”) for times from 5 to 960 min. Under these conditions, oxide film thicknesses ranged from 5 A to about 1 μm. The oxide films on InP were composed of In2O3, InPO3, and P4O10, with InPO3 being the predominant phase. The In2O3 content of the films varied with temperature, oxidation time, and oxidation conditions. For example, for InP in oxygen, the amount of this oxide decreased with temperature and time. At 450°C, the amount of In2O3 decreased markedly for oxidation in moist air (95°C) and even more so for oxidation in moist N2. Oxide films produced on InGaAs appeared to be composed mainly of a mixed oxide (Ga,In)2O3, with the In content being predominant. The oxide produced on InAlAs was composed mainly of In2O3 and Al2O3, with the amount of the latter tending to increase with increasing temperature. It was found that at 400 to 500°C, InAlAs did not oxidize much faster than InGaAs or InP in moist air (25°C) or in moist air (95°C). In moist N2, however, InAlAs was preferentially oxidized by a factor of five to ten over InP and InGaAs. In InAlAs/InGaAs heterostructures on InP substrates, used in heterojunction bipolar transitors (HBTs), InAlAs was even more strongly preferentially oxidized; the ratio of oxide thicknesses InP:InGaAs:InAlAs being 1:1:80. This is encouraging for forming Al2O3-containing oxide layers in device structures to try to improve device performance.

Effects of In2O3 doping and sintering temperature on the electrical properties of ZnO varistors

ZnO varistors are prepared using the 0.1–0.3 mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. The results show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The V c decreases with the increase of sintered temperature, when the In2O3 content is fixed (0.98%, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.

Conductivity of ZrO&lt;sub&gt;2&lt;/sub&gt;-Y&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;-In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Ceramics

The conductivity of sintered bodies in the ZrO2-Y2O3-In2O3 system has been measured using the complex impedance method at 400-900°C in air. The conductivity of the sintered body with x=0.05 in (ZrO2)1-2x(Y2O3)x(In2O3)x (x=0.04-0.06) ceramics was the highest over the temperature range studied. In (ZrO2)0.90(Y2O3)0.10-y(In2O3)y (y=0.02-0.08) ceramics, the conductivity increased with increasing In2O3 content, and decreased on annealing with increasing In2O3 content. In (ZrO2)0.92-z(Y2O3)0.08(In2O3)z (z=0.02-0.07) ceramics, the conductivity slightly decreased with increasing In2O3 content and remained unchanged on annealing regardless of In2O3 content. It is presumed that the conduction mechanism is dominated by oxygen ion conduction in air.

Indium-doped zinc oxide thin films prepared by rf magnetron sputtering

Indium-doped zinc oxide films have been prepared by rf magnetron sputtering, using ZnO targets containing up to 10 wt. % In2O3. Room temperature resistivity of the deposited films was found to decrease by about four orders of magnitude as the In2O3 content was increased from 0 to 10 wt. %.