Properties of Indium Doped Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering

Abstract

Indium doped zinc oxide films (ZIO) were deposited on non-alkali glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZIO films were investigated as a function of their In₂O₃ content (3.33-15.22 wt%). The ZIO films deposited with an In₂O₃ content of 9.54 wt% showed a relatively low resistivity of 9.13×10 ?4 Ω㎝ and a highly c-axis preferred orientation. The grain size and FWHM were mainly affected by the In₂O₃ content. The crystallinity and resistivity were enhanced with increasing grain size. The average transmittance of the ZIO films was over 85% in the visible region and their band gap varied from 3.22 to 3.66 eV depending on their doping ratio.