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Abstract
In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO2:In2O3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In2O3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μH increase at 0.1 ratio then decrease with more In2O3 content.
Highlights
Conducting oxide thin films are being an important component in different optoelectronic devices such as solar cells [1], light emitting diodes [2] and photodiodes devices [3] in which they are used as transparent electrodes
A transparent electrode is needed in manufacturing of solar cells on the side where light enters
The produced films were characterized by X-ray diffraction (XRD), Dc conductivity, Hall effect measurements and UV-visible absorption to study the effect of In2O3:SnO2 ratio on produced thin films properties
Summary
Conducting oxide thin films are being an important component in different optoelectronic devices such as solar cells [1], light emitting diodes [2] and photodiodes devices [3] in which they are used as transparent electrodes. The resistivity of these electrodes should be minimized as much as possible with keeping its high optical transparency over the visible region of the solar spectrum. Indium Tin oxide ITO is a promising material due to its exclusive properties such as high electrical conductivity, high optical transparency for light [4,5]. Where λ is the used x-ray wavelength, FWHM is full width at half maximum (in radians) and θ is diffraction angle
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