Improved Radiation Hardness Research Articles

Improvement of radiation hardness of the sampling calorimeters based on plastic scintillators

Improvement of radiation hardness of the sampling calorimeters based on plastic scintillators

Bidimensional silicon dosimeter: Development and characterization

Bidimensional silicon dosimeter: Development and characterization

A radiation-hardened two transistor memory cell for monolithic active pixel sensors in STAR experiment

Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) is dramatically decreased when intellectual property (IP) memories are integrated for fast readout application. This paper presents a new solution to improve radiation hardness and avoid latch-up for memory cell design. The tradeoffs among radiation tolerance, area and speed are significantly considered and analyzed. The cell designed in 0.35 μm process satisfies the radiation tolerance requirements of STAR experiment. The cell size is 4.55 × 5.45 μm2. This cell is smaller than the IP memory cell based on the same process and is only 26% of a radiation tolerant 6T SRAM cell used in previous contribution. The write access time of the cell is less than 2 ns, while the read access time is 80 ns.

A Rad-Hard Miniaturized Switching Module for High-Voltage Applications

A miniaturized, scalable, and rad-hard high-voltage module is demonstrated as a “proof-of-concept.” The module is suitable for space applications. The design uses a commercial process that combines 0.25-μm complementary metal-oxide semiconductor (CMOS) transistors with a high-voltage lateral double-diffused metal-oxide-semiconductor (DMOS) device (>600 V). The design was simulated, fabricated, and tested and shows functionality up to 2.5 kV. Several radiation-hardening-by-design (RHBD) techniques were used to improve radiation hardness over 100 krad.

Magnetic Czochralski silicon strip detectors for Super-LHC experiments

Magnetic Czochralski silicon strip detectors for Super-LHC experiments

Recent Progress in CERN RD39: Radiation Hard Cryogenic Silicon Detectors for Applications in LHC Experiments and Their Future Upgrades

CERN RD39 Collaboration develops radiation-hard cryogenic silicon detectors. Recently, we have demonstrated improved radiation hardness in novel Current Injected Detectors (CID). For detector characterization, we have applied cryogenic Transient Current Technique (C-TCT). In beam tests, heavily irradiated CID detector showed capability for particle detection. Our results show that the CID detectors are operational at the temperature -50degC after the fluence of 1 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> 1 MeV neutron equivalent/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

Silicon microstrip detectors in 3D technology for the sLHC

Silicon microstrip detectors in 3D technology for the sLHC

3D silicon strip detectors

3D silicon strip detectors

Short Strips for the sLHC: A P-Type Silicon Microstrip Detector in 3-D Technology

The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. With respect to the LHC, large improvements in radiation hardness are required. In this paper, we investigated the expected radiation hardness of the 3-D-design, where rows of 3-D-columns are etched in substrate material and joined together to form strips. To investigate the feasibility of 3-D silicon strip detectors (SSD) for the sLHC, we have built prototype modules using 3-D single type column (3-D-STC) strip detectors with short strips and front-end electronics from the present ATLAS SemiConductor Tracker (SCT). The modules were tested with a beta source setup before and after irradiation to sLHC fluences with 26 MeV protons. We report on the performance of these 3-D-modules, compare it to the results prior to irradiation, and draw conclusions about options for using 3-D SSD detectors for tracking at the sLHC.

Short p-type silicon microstrip detectors in 3D-stc technology

Short p-type silicon microstrip detectors in 3D-stc technology

CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments

CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments

Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

Shallow energy levels induced by γ rays in standard and oxygenated floating zone silicon

Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before and after irradiation with a 60Co γ-source up to 300 Mrad, have been studied by thermally stimulated currents (TSC) and deep level transient spectroscopy (DLTS) in the temperature range 4.2–110 K. Besides vacancy oxygen (VO) and interstitial-substitutional carbon (CiCs) emissions, several TSC peaks have been observed. A trap with an activation energy of 11 meV has been observed at 6 K only in irradiated DOFZ. Two hole traps at 80 meV and 95 meV have been observed both in irradiated FZ and DOFZ, while a trap at 100 meV, related to an interstitial-oxygen (IO2) complex, has been revealed only in irradiated DOFZ. A TSC peak close to 24 K has been resolved into two components, whose concentrations are independent of irradiation fluence: a trap at 55 meV and a level which remains charged after emission at 80 meV. Our measurements confirm the formation, only in DOFZ, of a radiation induced donor at 230 meV. It appears to be responsible for the improved radiation hardness of oxygenated Si together with the suppression of deep acceptors, since no shallower radiation-induced donors have been detected in DOFZ samples.

Device simulations of isolation techniques for silicon microstrip detectors made on p-type substrates

Recent studies have shown that silicon particle detectors made on p-type substrates feature an improved radiation hardness compared to more conventional single-side n-type devices. In particular, they show an increased charge collection efficiency at very high irradiation levels. At present few devices have been fabricated on these substrates and there are still many doubts regarding the best type of isolation structure to be employed for the interruption of the inversion electron layer present between the n/sup +/ electrodes. In this paper, a description of the behavior of microstrip detectors featuring three isolation solution (p-spray, p-stop and a combination between the previous two) is presented. The analysis is based on device simulations and covers the breakdown and interstrip capacitance issues.

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO2). The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.

Status of the Belle silicon vertex detector

Status of the Belle silicon vertex detector

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

The effects of Nd impurity on the optical, dielectric and electrical properties of PbWO4 single crystals

AbstractA series of Nd‐doped PbWO4 (PWO) crystals are grown using the Czochralski method and their optical and electrical properties are investigated. It is found that the Nd3+ ion characterizes the optical absorption spectra of Nd‐containing crystals. On increasing the concentration of Nd, the optical absorption edge of the crystals shifts to low energy, which results from the defect energy level effect. Similar to other trivalent rare‐earth ions, the improvement of radiation hardness is also achieved in Nd‐doped PWO. Impedance spectroscopy reveals two dielectric loss peaks, which are assigned to [2($ {\rm Nd} ^{3+}_{\rm Pb} $)•–(VPb)″] and [($ {\rm Nd} ^{3+}_{\rm W} $)′′′–($ {\rm Nd} ^{3+}_{\rm Pb} $)•–(VO)••] defect complexes, respectively. High electrical conductivity with an activation energy of about 0.29 ± 0.02 eV at high temperature is present in PWO containing 1.6% Nd. It is of interest that the heavily Nd‐doped PWO could be a high‐temperature ionic conductor. (© 2005 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

Paradoxes of steady-state and pulse operational mode characteristics of silicon detectors irradiated by ultra-high doses of γ-rays

Paradoxes of steady-state and pulse operational mode characteristics of silicon detectors irradiated by ultra-high doses of γ-rays

Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation

Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation