Improvement In Device Efficiency Research Articles

A-Site Engineering with Thiophene-Based Ammonium for High-Efficiency 2D/3D Tin Halide Perovskite Solar Cells.

Tin halide perovskites are the most promising candidate materials for lead-free perovskite solar cells (PSCs) thanks to their low toxicity and ideal band gap energies. The introduction of 2D/3D mixed perovskite phases in tin-based PSCs (TPSCs) has proven to be the most effective approach to improving device efficiency and stability. However, a 2D perovskite phase normally shows relatively low carrier mobility, which will be unfavorable for carrier transfer in the devices. In this work, we used a thiophene-based cation 2-(thiophen-3-yl)ethan-1-aminium (3-TEA) as a spacer to form a novel 2D perovskite phase in TPSCs, which shows the most promising effect on the performance enhancement in comparison with other cations like 2-(thiophen-2-yl)ethan-1-aminium (2-TEA) and benzene-based 2-phenylethan-1-aminium (PEA). Theoretical calculations reveal that 3-TEA enables the most compact crystal packing of [SnI6]4- octahedral layers, resulting in the lowest hole effective mass and formation energy in the 2D phase. This effect significantly enhances device efficiency and stability by facilitating more efficient carrier transfer within the 2D phase. These findings indicate that thiophene-based 2D perovskites are well-suited for high-performance TPSCs.

A‐Site Engineering with Thiophene‐Based Ammonium for High‐Efficiency 2D/3D Tin Halide Perovskite Solar Cells

AbstractTin halide perovskites are the most promising candidate materials for lead‐free perovskite solar cells (PSCs) thanks to their low toxicity and ideal band gap energies. The introduction of 2D/3D mixed perovskite phases in tin‐based PSCs (TPSCs) has proven to be the most effective approach to improving device efficiency and stability. However, a 2D perovskite phase normally shows relatively low carrier mobility, which will be unfavorable for carrier transfer in the devices. In this work, we used a thiophene‐based cation 2‐(thiophen‐3‐yl)ethan‐1‐aminium (3‐TEA) as a spacer to form a novel 2D perovskite phase in TPSCs, which shows the most promising effect on the performance enhancement in comparison with other cations like 2‐(thiophen‐2‐yl)ethan‐1‐aminium (2‐TEA) and benzene‐based 2‐phenylethan‐1‐aminium (PEA). Theoretical calculations reveal that 3‐TEA enables the most compact crystal packing of [SnI6]4− octahedral layers, resulting in the lowest hole effective mass and formation energy in the 2D phase. This effect significantly enhances device efficiency and stability by facilitating more efficient carrier transfer within the 2D phase. These findings indicate that thiophene‐based 2D perovskites are well‐suited for high‐performance TPSCs.

Charge Transport Characteristics in Doped Organic Semiconductors Using Hall Effect

Numerical computations through the finite element method (FEM) are used to determine the impact of doping on carrier concentration and recombination between charges in time for organic semiconductor diodes having low mobility. The Hall effect is used to determine the effects of doping on the performance and reliability of organic semiconductor devices by accurately modeling these processes. In this work, the number density of charge carriers and Hall voltages are computed for n-type doped semiconductors with two different recombination processes, such as non-Langevin and Langevin-type. The findings reveal that in the Langevin system with β′=1, the number density of charge carriers is almost five and four times lower compared with the non-Langevin system with β′=0.01 for increasing dopant concentrations of Npd = 1 and 3, respectively. The Langevin system also had lower Hall voltages than the steady-state and non-Langevin systems for different magnetic fields with dopants, and the non-Langevin system had nearly identical Hall voltages as the steady-state case. The outcome of the current work provides insights into charge transportation mechanisms in low-mobility doped organic semiconductors with Hall effect measurements to improve device efficiency.

Morphology Optimization by Non-Halogenated and Twisted Volatile Solid Additive for High-Efficiency Organic Solar Cells.

Recently, volatile solid additives have attracted tremendous interest in the field of organic solar cells (OSCs), which can effectively improve device efficiency without sacrificing the reproducibility and stability of the device. However, the structure of reported solid additives is onefold and its working mechanism needs to be further investigated. Herein, a novel non-halogenated and twisted solid additive 1,4-diphenoxybenzene (DPB) is employed to optimize the morphology of the active layer in OSCs. The properties of additive DPB, morphology of active layer, and carrier dynamics behaviors have been systematically investigated through theoretical calculations, in situ and ex situ spectroscopy, grazing-incidence wide-angle X-ray scattering (GIWAXS), and grazing-incidence small-angle X-ray scattering (GISAXS) measurement, as well as ultrafast spectroscopy technology. The results reveal that the twisted additive DPB selectively interacts with acceptor Y6, and thus forms optimized morphology of active layer with increased molecular crystallinity, tight molecular packing, and favorable phase separation. As a result, the optimized devices deliver a remarkable power conversion efficiency (PCE) of 19.04%, which is the highest value for the D18-Cl:N3 system to date. These results demonstrate that non-halogenated and twisted solid additive DPB has broad prospects in the preparation of highly efficient OSCs, providing theoretical and experimental guidance for the development of high-performance solid additives.

Optimization and analysis of Si/SiGe strained vertically stacked heterostructure on insulator FeFinFET for high performance analog and RF applications

As semiconductor technology advances, the exploration of novel materials and device architectures becomes imperative to meet the growing demands of integrated circuits for analog and radio-frequency (RF) applications. In this paper, various advanced technologies have been amalgamated such as integration of ferroelectric layer in multigate FinFET along with the adaptation of SOI technology. Further strain technology is also used which employs a tri-layered strained-silicon channel system with the help of SiGe to form Vertically Stacked Heterostructure on Insulator Ferroelectric based FinFET (VS-HOI-FeFinFET) and on comparison with baseline FeFinFET, it is found to show remarkable improvements in terms of various measured parameters such as drain current, switching ratio, threshold voltage and subthreshold swing. Subsequently, gate stacking architecture is incorporated in VS-HOI-FeFinFET to further optimize the device performance. The four different configurations C1 to C4 are taken in terms of four different combinations of gate stack materials considered for gate oxide such as C1(SiO2+Al2O3), C2(SiO2+HfO2), C3(Al2O3), and C4(Al2O3+HfO2). It is found that the static and analog performance of VS-HOI-GS-FeFinFET enhance sequentially from configuration C1 to C4 such as switching ratio is enhanced upto around 5 times, DIBL and quality factor are improved by around 41% and 58% respectively along with significant improvement in device efficiency, early voltage, intrinsic gain, output conductance and output resistance. Subsequently performance optimization of VS-HOI-GS-FeFinFET with variation in mole fraction of germanium is also explored for various analog metrics. Further, several RF parameters are also explored and it is observed that the gain frequency product (GFP) and gain transconductance frequency product (GTFP) are augmented by around three times in magnitude along with 16% reduction in the unity gain cut off frequency in C4 configuration, exhibiting its ability of high frequency amplification with minimized noise distortion thus makes the device suitable for various high performance Analog and RF applications.

Dual‐Core Engineering for Efficient Deep‐Blue Multiple Resonance Thermally Activated Delayed Fluorescent Materials

AbstractDeveloping narrowband blue multiple resonance (MR) organic emitters with Commission Internationale de L'Eclairage (CIE) y coordinates <0.1 is essential for advanced display technologies. This study proposes a deep‐blue thermally activated delayed fluorescence (TADF) emitter, named 2BNO, which integrates two independent MR cores. Unlike many TADF materials with single‐bonded dual emitting cores, 2BNO utilizes a steric hindrance‐assisted fluorene bridge to achieve an orthorhombic molecular structure. The dual‐core MR‐TADF emitter shows enhanced light absorption and a high photoluminescence quantum yield. Notably, the emission of 2BNO is not significantly redshifted compared to single‐core compounds and maintains a narrow full width at half‐maximum (FWHM) of 24 nm with CIE coordinates of (0.147, 0.041) in 2Me‐THF solution, nearing the BT.2020 blue standard. Organic light‐emitting diodes (OLEDs) incorporating 2BNO as the emitter exhibit deep‐blue emission at 460 nm with a narrow FWHM of 29 nm and CIE coordinates of (0.14, 0.09). The dual emitting core design significantly improves device efficiency, achieving a high external quantum efficiency (EQE) of 19.8%. The dual‐core molecular design strategy in this work is demonstrated to be effective in promoting the efficiency of the TADF emitters while preserving deep‐blue color purity.

An Optimization Path for Sb2(S,Se)3 Solar Cells to Achieve an Efficiency Exceeding 20.

Antimony selenosulfide, denoted as Sb2(S,Se)3, has garnered attention as an eco-friendly semiconductor candidate for thin-film photovoltaics due to its light-absorbing properties. The power conversion efficiency (PCE) of Sb2(S,Se)3 solar cells has recently increased to 10.75%, but significant challenges persist, particularly in the areas of open-circuit voltage (Voc) losses and fill factor (FF) losses. This study delves into the theoretical relationship between Voc and FF, revealing that, under conditions of low Voc and FF, internal resistance has a more pronounced effect on FF compared to non-radiative recombination. To address Voc and FF losses effectively, a phased optimization strategy was devised and implemented, paving the way for Sb2(S,Se)3 solar cells with PCEs exceeding 20%. By optimizing internal resistance, the FF loss was reduced from 10.79% to 2.80%, increasing the PCE to 12.57%. Subsequently, modifying the band level at the interface resulted in an 18.75% increase in Voc, pushing the PCE above 15%. Furthermore, minimizing interface recombination reduced Voc loss to 0.45 V and FF loss to 0.96%, enabling the PCE to surpass 20%. Finally, by augmenting the absorber layer thickness to 600 nm, we fully utilized the light absorption potential of Sb2(S,Se)3, achieving an unprecedented PCE of 26.77%. This study pinpoints the key factors affecting Voc and FF losses in Sb2(S,Se)3 solar cells and outlines an optimization pathway that markedly improves device efficiency, providing a valuable reference for further development of high-performance photovoltaic applications.

Temperature-Gradient Solution Deposition Amends Unfavorable Band Structure of Sb2(S,Se)3 Film for Highly Efficient Solar Cells.

Band structure of a semiconducting film critically determines the charge separation and transport efficiency. In antimony selenosulfide (Sb2(S,Se)3) solar cells, the hydrothermal method has achieved control of band gap width of Sb2(S,Se)3 thin film through tuning the atomic ratio of S/Se, resulting in an efficiency breakthrough towards 10 %. However, the obtained band structure exhibits an unfavorable gradient distribution in terms of carrier transport, which seriously impedes the device efficiency improvement. To solve this problem, here we develop a strategy by intentionally regulating hydrothermal temperature to control the chemical reaction kinetics between S and Se sources with Sb source. This approach enables the control over vertical distribution of S/Se atomic ratio in Sb2(S,Se)3 films, forming a favorable band structure which is conducive to carrier transport. Meanwhile, the adjusted element distribution not only ensures the uniformity of grain structure, but also increases the Se content of the films and suppress sulfur vacancy defects. Ultimately, the device delivers a high efficiency of 10.55 %, which is among the highest reported efficiency of Sb2(S,Se)3 solar cells. This study provides an effective strategy towards manipulating the element distribution in mixed-anion compound films prepared by solution-based method to optimize their optical and electrical properties.

Unveiling the impact of PC61BM concentration on perovskite solar cell performance

A detailed fabrication method is represented for perovskite solar cells, incorporating various materials and processes based on glove box-free sol-gel deposition routes. Key components include NiOx HTL, PC61BM ETL, BCP HBL, and CH3NH3PbI3 perovskite absorber. Results reveal a significant influence of PC61BM concentration on device efficiency, with champion cells exhibiting optimized VOC, JSC, and FF values at a specific concentration. Statistical analysis of 38 devices confirms the reproducibility and consistency of this concentration, yielding a PCE of 18.2 %. This study investigates a gap in the literature by clarifying the impact of PC61BM solution concentration as a sol-gel deposited electron transport layer. By identifying the optimal concentration and its role in improving device efficiency and reproducibility, investigation contributes to advancing the field of fully sol-gel-based perovskite solar cell technology.

A Polymeric Two-in-One Electron Transport Layer and Transparent Electrode for Efficient Indoor All-Organic Solar Cells.

Transparent electrodes (TEs) are vital in optoelectronic devices, enabling the interaction of light and charges. While indium tin oxide (ITO) has traditionally served as a benchmark TE, its high cost prompts the exploration of alternatives to optimize electrode characteristics and improve device efficiencies. Conducting polymers, which combine polymer advantages with metal-like conductivity, emerge as a promising solution for TEs. This work introduces a two-in-one electron transport layer (ETL) and TE based on films of polyethylenimine ethoxylated (PEIE)-modified poly(benzodifurandione) (PBFDO). These PEIE-modified PBFDO layers exhibit a unique combination of properties, including low sheet resistance (130 Ω sq-1), low work function (4.2 eV), and high optical transparency (>85% in the UV-vis-NIR range). In contrast to commonly used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), the doping level of PBFDO remains unaffected by the PEIE treatment, as verified through UV-vis-NIR absorption and X-ray photoelectron spectroscopy measurements. When employed as a two-in-one ETL/TE in organic solar cells, the PEIE-modified PBFDO electrode exhibits performance comparable to conventional ITO electrodes. Moreover, this work demonstrates all-organic solar cells with record-high power conversion efficiencies of >15.1% under indoor lighting conditions. These findings hold promise for the development of fully printed, all-organic optoelectronic devices.

Impact of Alternating-Current Operation on All-Inorganic Quantum Dot Light-Emitting Diodes.

In colloidal quantum dot light-emitting diodes (QD-LEDs), replacing organic hole transport layers (HTLs) with their inorganic counterparts is expected to yield distinct advantages due to their inherent material robustness. However, despite the promising characteristics of all-inorganic QD-LEDs, some challenges persist in achieving stable operation; for example, the electron overflow toward the inorganic HTL and charge accumulation within working devices return a temporal inconsistency in device characteristics. To address these challenges, we propose an operational approach that employs an alternating-current (AC) in all-inorganic QD-LEDs. We carry out comprehensive studies on the optoelectrical characteristics of all-inorganic QD-LEDs under direct-current (DC) or AC operation and demonstrate that AC operation can facilitate efficient charge carrier recombination within the QD emissive layer, leading to improved device efficiency and temporally invariant optoelectronic characteristics. Leveraging the intrinsic material robustness of inorganic charge transport layers (CTLs), our current study suggests a promising pathway toward enhancing the performance and stability of QD-LEDs, particularly for futuristic display applications.

Phenylethylammonium iodide induced “in situ healing” behavior for carbon-electrode basing, hole-conductor-free perovskite solar cells

Previous study showed that blending octylammonium iodide (OAI) in a carbon paste induced a kind of in situ healing effect for carbon-electrode basing, hole-conductor-free, planar perovskite solar cells. Here, the strategy is re-examined by considering another kind of ammonium halide molecule or phenethylammonium iodide (PEAI). It is observed that, after moderate PEAI blending, power conversion efficiency of devices rises from 11.56 (±0.82)% to 15.77 (±0.53)% (championed at ∼17.9%), with open-circuit voltage increasing from 969 (±28) to 1033 (±13) mV, and fill factor increasing from 51.17 (±2.68)% to 65.71 (±1.36)%. The improved device efficiency is due to the retarded charge recombination and the improved charge transfer processes. Transient photovoltage/photocurrent decay curve tests show that, after PEAI blending, lifetime of charge carriers in device increases from 3.21 to 5.67 μs, while the charge extraction time decreases from 2.99 to 2.18 μs. Moreover, built-in potential rises according to the Mott–Schottky study. A designated “penetration-reaction” test reveals that PEAI could also induce the in situ healing effect, which accounts for the improved charge transfer/recombination processes. The study could tell the universality of this strategy to certain extent.

Impact of Buried Interface Texture on Compositional Stratification and Ion Migration in Perovskite Solar Cells

AbstractDespite the striking increase in the power conversion efficiency (PCE) of lead‐based perovskite solar cells (PSCs), their poor operational stability impedes their commercialization. Among the various factors that influence device stability, ion migration has been identified as a key driver of degradation. In this work, the focus is on studying ion migration‐induced degradation in inverted architecture PSCs, which employ either a thin polymer layer or a self‐assembled monolayer (SAM) for hole extraction. It is demonstrated that the difference in texture imposed by the use of these hole transport layers (HTL) is an important and thus far inconspicuous factor that impacts ion migration, and consequently device stability. By investigating the buried interface in detail, it is revealed that its texture has a strong impact on the vertical compositional stratification in the perovskite active layer. By monitoring bias‐induced ion migration in devices with different hole extraction layers, it is demonstrated that the smooth polymer‐based HTL results in a higher degree of ion migration than the rough SAM HTL, corresponding to a stronger degradation in the former. These results further indicate that the use of SAMs for hole extraction is a promising strategy to suppress ion migration and improve device efficiency.

28‐4: Positive Aging Resulted in Highly Efficient Blue Quantum Rod Light Emitting Diodes

The synthesis of blue quantum rods (QRs) is challenging due to fast kinetics and a significant shift in color during the synthesis of w‐CdSe seeds. Herein, we synthesized highly bright CdSe/ZnxCd1‐xS/ZnS core/shell blue QRs with an emission wavelength of 480 nm and fabricated blue QRLEDs. We found that the aging process of the QRLEDs significantly improved their performance by slowly reacting Al with ZnMgO and forming an AlOx interlayer among the ZnMgO/Al, which increased electron injection by over 3x times. The AlOx layer minimized the electron injection barrier and produced highly conductive ZnMgO by forming oxidation deficiency. Additionally, the exciton quenching suppressed at the QRs/ZnMgO/Al interface, and film morphology also changed among the QRs/ZnMgO stacks with the time. As a result, the aged QRLEDs showed an EQE of 9.4% and luminance of 61500 cd/m2, which is 2.6x and 3x times higher than the freshly made QRLEDs. These are the highest reported numbers in EQE and luminance of blue QRLEDs. Additionally, the durability of the blue QRLEDs significantly improved from 50 to 300 hours at 100 cd/m2 initial luminance. Overall, the use of QRs in LEDs greatly improves device efficiency and brightness.

Transfer of 2D Films: From Imperfection to Perfection.

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

Etching-free pixel definition in InGaN green micro-LEDs

The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near sidewall regions act as non-radiative recombination centers and paths for current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing plasma damage and subsequent dielectric passivation. Thermal annealing in ambient air oxidized and reshaped the LED structure, such as p-layers and InGaN/GaN multiple quantum wells. Simultaneously, the pixel areas beneath the pre-deposited SiO2 layer were selectively and effectively protected. It was demonstrated that prolonged thermal annealing time enhanced the insulating properties of the oxide, significantly reducing LED leakage current. Furthermore, applying a thicker SiO2 protective layer minimized device resistance and boosted device efficiency effectively. Utilizing the STO method, InGaN green micro-LED arrays with 50-, 30-, and 10-µm pixel sizes were manufactured and characterized. The results indicated that after 4 h of air annealing and with a 3.5-μm SiO2 protective layer, the 10-µm pixel array exhibited leakage currents density 1.2 × 10−6 A/cm2 at −10 V voltage and a peak on-wafer external quantum efficiency of ~6.48%. This work suggests that the STO method could become an effective approach for future micro-LED manufacturing to mitigate adverse LED efficiency size effects due to the plasma etching and improve device efficiency. Micro-LEDs fabricated through the STO method can be applied to micro-displays, visible light communication, and optical interconnect-based memories. Almost planar pixel geometry will provide more possibilities for the monolithic integration of driving circuits with micro-LEDs. Moreover, the STO method is not limited to micro-LED fabrication and can be extended to design other III-nitride devices, such as photodetectors, laser diodes, high-electron-mobility transistors, and Schottky barrier diodes.

Impact of blocking layers based on TiO2 and ZnO prepared via direct current reactive magnetron sputtering on DSSC solar cells

The optimization of dye-sensitized solar cells (DSSCs) technology towards suppressing charge recombination between the contact and the electron transport layer is a key factor in achieving high conversion efficiency and the successful commercialization of this type of product. An important aspect of the DSSC structure is the front blocking layer (BL): optimizing this component may increase the efficiency of photoelectron transfer from the dye to the semiconductor by reduction charge recombination at the TiO2/electrolyte and FTO/electrolyte interfaces. In this paper, a series of blocking layer variants, based on TiO2 and ZnO:TiO2, were obtained using the reactive magnetron sputtering method. Material composition, structure and layer thickness were referred to each process parameters. Complete DSSCs with structure FTO/BL/m-TiO2@N719/ EL-HSE/Pt/FTO were obtained on such bases. In the final results, verification of opto-electrical parameters of these cells were tested and used for the conclusions on the optimal blocking layer composition. As the conclusion, application of blocking layer consists of neat TiO2 resulted in improvement of device efficiency. It should be noted that for TiO2:ZnO/CuxO and TiO2/CuxO cells, higher efficiencies were also achieved when pure TiO2 was used as window layer. Additionally it was proven that the admixture of ZnO phase inspires Voc and FF growth, but is overall unfavorable compared to pristine TiO2 blocking layer and the reference cell, according to the final cell efficiency.

Hydrogen‐Bonding Interactions Between Terpolymers Enable Excellent Device Efficiency and Operational Stability of Non‐Halogenated Solvent‐Processed Polymer Solar Cells

AbstractAlthough polymer solar cells (PSCs) have shown considerable power conversion efficiency (PCE) potential, their poor operational stability is a major obstacle for their future commercialization. In this study, the ternary‐blend strategy based on D1–A–D1–D2‐type conjugated random terpolymers containing hydrogen–bonding sites is employed to simultaneously improve device efficiency and long‐term stability. Notably, the PM6‐ThEG:PM6‐ThOH:Y6‐BO ternary‐blend system exhibits a remarkable PCE of 17.2% with superior photo, thermal, and mechanical stability, outperforming those of binary devices based on PM6, PM6‐ThEG, and PM6‐ThOH polymer donors. These outstanding results are likely attributed to the robust molecular lock via hydrogen bonds between PM6‐ThEG and PM6‐ThOH terpolymers, which can induce strong intermolecular packing, a dense 3D terpolymer network, and optimized morphology. These results also correlate well with the computational study. A comprehensive analysis of optoelectronic and morphological properties as well as the exploration of underlying physical mechanisms collectively verifies the effectiveness of this approach based on mixed random terpolymers with hydrogen‐bonding moiety to achieve the non‐halogenated solvent‐processed PSCs with exceptional efficiency and operational stability.

Critical role of the end-group acceptor in enhancing the efficiency of indacenodithiophene-benzothiadiazole-linked nonfullerene organic solar cells through morphology optimization

Solution-processed organic solar cells (OSCs) have great promise for next-generation solar energy conversion technologies. Innovative acceptors are constantly being designed to improve device efficiency. In this work, we designed and synthesized a series of A–π–D–π–A type non-fullerene acceptor (NFA) molecules, named IB-TOT, IB-TOM, IB-IOO, and IB-IOM for their applications in OSCs. All molecules showed high thermal stability, broad photoabsorption, and relatively lower highest occupied molecular orbital (HOMO) energy levels from −5.48 eV to −5.58 eV. The optimized OSCs based on these NFAs and PTB7-Th donor deliver power conversion efficiencies (PCEs) of 8.19%, 5.50%, 2.42%, and 3.10% for IB-TOT, IB-TOM, IB-IOO, and IB-IOM molecules, respectively. The higher PCE of IB-TOT-based OSCs is attributed to their excellent miscibility and superior interpenetrating network morphology compared to the other three compounds. These results demonstrate that using the 3-ethylrhodanine acceptor unit to construct the NFA molecule is a successful approach for outstanding achievement in OSCs.

Fluorine substitutions engineering of benzotriazole‐based hole transport polymers toward high‐performance CsPbI2Br perovskite solar cells

AbstractDeveloping suitable hole transport materials is of utmost importance in the quest to enhance the performance of CsPbI2Br perovskite solar cells (PSCs). Among the various undoped hole transport materials (HTMs), D‐π‐A type polymers incorporating benzodithiophene (BDT) as the D unit and benzotriazole (BTA) as the A unit have shown promising potential. To further optimize the energy level and enhance the hole transport ability of these HTMs, we employed a fluorine substitution strategy to synthesize P‐BTA‐2F and P‐BTA‐4F based on the polymer P‐BTA‐0F. Subsequently, we investigated the impact of varying degrees of fluorine substitution on the properties of the polymer materials and the performance of the devices. As the number of F substitutions increases, the polymer energy level of the HTM gradually shifts downward, the face‐on stacking of the HTM strengthens, the hole mobility of the HTM increases, and the rate of hole extraction and transport becomes faster. Ultimately, the CsPbI2Br PSCs based on the P‐BTA‐4F HTM achieve the highest power conversion efficiency (PCE) of 17.68%. Those findings demonstrate that selecting an appropriate amount of fluorine substitution is crucial for regulating the performance of polymer HTMs and improving device efficiency.