III-V Research Articles

Recent progress of innovative infrared avalanche photodetectors

Currently, the development trend of infrared detection systems is oriented towards achieving smaller size, reduced weight, lower power consumption, decreased cost, and heightened performance, collectively referred to as SWAP3. In this context, a rapid evolution is witnessed in the realm of next-generation high-sensitivity infrared avalanche photodiodes (APD). In recent years, the increasing demands for detector performance from astronomical, remote sensing, and civilian applications have presented novel challenges for the mechanistic exploration and device design of traditional avalanche photodetectors. This review explores the forefront of infrared APD technology, focusing on the remarkable progress achieved through the utilization of II-VI and III-V semiconductor families and the exploration based on novel low-dimensional materials. The review provides a detailed analysis of the unique properties and performance enhancements exhibited by APDs based on these material systems, shedding light on their potential for revolutionizing infrared sensing and imaging applications, and inspiring further innovation and exploration in the field of infrared photodetection.

Diffusion models of grown-in and implanted p-type dopant in III-V semiconductor compounds

This research shows that the diffusion of grown-in and implanted Be atoms in III-V considered semiconductor materials, such as the Liquid-Encapsulated Czochralski-grown (LEC) GaAs as well as the Gas-Source Molecular Beam Epitaxy (GSMBE) In0.53Ga0.47As, In0.73Ga0.27As0.58P0.42, In0.53Ga0.47As/In0.73Ga0.27As0.58P0.42, In0.53Ga0.47As/InP compounds, taking place during the Rapid Thermal Annealing (RTA) process, is perfectly well explained by the “full” version of the kick-out mechanism operating through singly positively ionized Be interstitials and group III self-interstitial ions (Ga, In) in all their states of positive charge including neutral. Numerical solutions of the differential equations, corresponding to the considered system of diffusion reactions, have been calculated using the finite difference approach and our elaborate finite difference-Bairstow method. Such a model naturally emerges from most research works, including ours, in the considered field, over the last decades and makes it possible to “reconcile” their different diffusion models. In this study, we also present and analyze the Secondary Ion Mass Spectrometry (SIMS) profiles of the distribution of implanted Be in GaAs at an energy of 100 keV with a high dose of 1.0 ⋅ 1015cm−2 and annealed at temperatures ranging from 700 to 850 °C for à time ranging from 60 to 240s.

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots.

Solution-processed colloidal III-V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III-V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm-2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.

Magnetic field modulation of polaron relaxation coherence effects in III-V semiconductor Gaussian quantum wells

We have theoretically investigated the effects of the cyclotron frequency of magnetic field, the initial depth and the range of the asymmetrical Gaussian confinement potential on the vibrational frequency, ground state energy, excited state energy and coherence time of polaron in III-V semiconductors by using a linear combination operator and unitary transformations methods. Through numerical calculations, we find some interesting phenomena that the polaron decreases the energy level and releases the energy of a phonon to jump. From the point of view of the energy level of the polaron, which is αℏωLO energy lower than that of the electron, and the transition of the polaron to the ground state will have a change in lattice position, and the lattice relaxation phenomenon will appear. The theoretical study of the quantum coherence effect of polaron energy levels will provide guidance for the development of optoelectronic devices and the transmission of quantum information.

(Invited) Mulitjunction III-V Semiconductors for Photo-Electrochemical Hydrogen Production: Recent Progress in Efficiency, Durability, and Cost

Photo-electrochemical (PEC) hydrogen production is a route to carbon-free fuel that combines light absorption and water electrolysis into one device. Challenging targets for solar-to-hydrogen (STH) efficiency, durability, and semiconductor absorber costs must be realized for this approach to be economically competitive with other hydrogen production pathways. Research on PEC hydrogen production at the National Renewable Energy Laboratory (NREL) has focused on III-V semiconductor absorber materials because their tunable bandgaps, high photon conversion efficiencies, and ability to make multi-junction structures have resulted in the highest STH efficiencies yet demonstrated. This talk will focus on recent NREL results showing progress toward PEC hydrogen production efficiency, durability, and cost targets. Specifically, we have been able to improve theoretically achievable STH efficiency through bandgap engineering in multijunction devices. Photon management strategies to close the gap between theoretical and measured STH efficiency will also be discussed. Durability remains a significant challenge for III-V materials in a PEC environment. We will describe modifications to the semiconductor surface and the electrolyte constitution that can make the photoabsorber less susceptible to photocorrosion during operation. Finally, we will present preliminary results on III-V PEC materials synthesized via hydride vapor phase epitaxy, an alternative route to high-efficiency photoelectrodes that could potentially have much lower costs than the metalorganic vapor phase epitaxy method traditionally used. These improvements have yielded III-V PEC devices that are close to the STH efficiency target (17% vs. 25%) while the demonstrated durability and cost are still considerably far from their target values.

(Invited) Quest for Fully Spin and Optically Polarized Semiconductor Nanostructures for Room-Temperature Opto-Spintronics

Spintronics represents a new paradigm for future electronics, photonics and information technology, which explores the spin degree of freedom of the electron for information storage, processing and transfer. Since 1990s, we have witnessed great success of metal-based spintronics that has revolutionized the mass data storage industry. There has also been an enormous push for semiconductor spintronics during the past three decades, with the aim to capitalize the past and current success of charge-based semiconductor technology and to make its spin counterpart the backbone of future spintronics just like semiconductors have done in today’s electronics/photonics. An exclusive advantage of semiconductor spintronics is its potential for opto-spintronics that will allow integration of spin-based information processing and storage with photon-based information transfer and communications. Unfortunately, progresses of semiconductor spintronics have so far been severely hampered by the failure to generate nearly fully spin-polarized charge carriers in semiconductors at and above room temperature (RT) at which today’s devices operate.In this work, we succeed to achieve conduction electron spin polarization exceeding 90% at RT in a semiconductor nanostructure, which remains steadily high even up to 110°C [1]. This represents the highest RT electron spin polarization ever reported in any semiconductor by any approach! This breakthrough is accomplished by a conceptually new approach of defect-engineered remote spin filtering and amplification of InAs quantum-dot (QD) electrons via an adjacent tunneling-coupled GaNAs quantum well acting as a spin filter. The extraordinary spin filtering effect in GaNAs is enabled by spin-dependent recombination via spin-polarized defects, i.e. grown-in Ga self-interstitials, which selectively deplete conduction electrons with an opposite spin orientation to that of the defect electron. In sharp contrast to the general trend of deteriorating spin polarization with increasing temperature seen in all other approaches of spin generation, our approach is gifted with an opposite temperature dependence up to RT thanks to a thermally accelerated remote spin-filtering effect as a result of thermally activated recombination via the defects [2]. We further show that the QD electron spin can be remotely manipulated by spin control in the adjacent spin filter, paving the way for remote spin encoding and writing of quantum memory as well as for remote spin control of spin-photon interfaces. This work demonstrates the feasibility to implement opto-spintronic functionality under practical device operation conditions in a semiconductor nanostructure system based on the mature III-V semiconductor technology commonly used for today’s optoelectronics and photonics. It could also pave the way for a range of potential spintronic and opto-spintronic applications exploiting the state-of-the-art GaAs technology platform, such as spin-LEDs, spin lasers, spin-polarized single-photon sources, quantum spin-photon interfaces, spin qubits, etc.

Thermal Atomic Layer Deposition of Gallium Nitride Films Using Tris(dimethylamido)Gallium and Ammonia

Gallium nitride (GaN) is a III-V semiconductor material with a wide and direct bandgap, relatively high carrier mobility, and high breakdown voltage. GaN is suitable for applications in optoelectronic devices and power devices, including light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs). Typically, epitaxial GaN layers are grown by metal-organic chemical vapor deposition (MOCVD) at high deposition temperatures. However, low-temperature growth of GaN is necessary for temperature-sensitive devices and substrates. Atomic layer deposition (ALD) is a technique that offers unique advantages, such as low process temperature, excellent conformality, and atomic-level thickness control.In this study, we investigated the thermal ALD process of GaN at a low temperature of 200°C. Tris(dimethylamido)gallium (TDMAGa) was selected as the Ga precursor because tris(dimethylamido)titanium and tris(dimethylamido)aluminum were successfully adopted in the low-temperature ALD process of TiN and AlN thin films [1]. The growth and properties of ALD GaN films were investigated. ALD GaN films exhibited a self-limiting reaction with a deposition rate of 1.34 Å/cycle at 200°C, with a refractive index of 2.07. The saturation times for TDMAGa and NH3 pulses were 5 s and 30 s, respectively. Deposition at 250°C showed a deposition rate higher than 3 Å/cycle due to the thermal decomposition of TDMAGa. The ALD GaN film deposited at 200°C was amorphous and nitrogen deficient. To improve the crystallinity and composition, the as-deposited GaN films were annealed in an NH3 atmosphere in the deposition chamber without air exposure. The effects of annealing on the crystallinity and composition of the films were investigated. Acknowledgments This work was supported by Samsung Display Co., Ltd.

Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation.

Dual-comb lasers are a new class of ultrafast lasers that enable fast, accurate and sensitive measurements without any mechanical delay lines. Here, we demonstrate a 2-µm laser called MIXSEL (Modelocked Integrated eXternal-cavity Surface Emitting Laser), based on an optically pumped passively modelocked semiconductor thin disk laser. Using III-V semiconductor molecular beam epitaxy, we achieve a center wavelength in the shortwave infrared (SWIR) range by integrating InGaSb quantum well gain and saturable absorber layers onto a highly reflective mirror. The cavity setup consists of a linear straight configuration with the semiconductor MIXSEL chip at one end and an output coupler a few centimeters away, resulting in an optical comb spacing between 1 and 10 GHz. This gigahertz pulse repetition rate is ideal for ambient pressure gas spectroscopy and dual-comb measurements without requiring additional stabilization. In single-comb operation, we generate 1.5-ps pulses with an average output power of 28 mW, a pulse repetition rate of 4 GHz at a center wavelength of 2.035 µm. For dual-comb operation, we spatially multiplex the cavity using an inverted bisprism operated in transmission, achieving an adjustable pulse repetition rate difference estimated up to 4.4 MHz. The resulting heterodyne beat reveals a low-noise down-converted microwave frequency comb, facilitating coherent averaging.

Real-time, chirped-pulse heterodyne detection at room temperature with 100 GHz 3-dB-bandwidth mid-infrared quantum-well photodetectors

Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi-quantum-well photodetectors operating in the 10–11 µm range are demonstrated, with a responsivity of 0.3 A/W and a 3-dB-cutoff bandwidth of 100 GHz at room temperature. The frequency response is measured up to 220 GHz: beyond 100 GHz we find a roll-off dominated by the 2.5-ps-long recombination time of the photo-excited electrons. The potential of the detectors is illustrated by setting up an experiment where the time dependent emission frequency of a quantum cascade laser operated in pulsed mode is measured electronically and in real time, over a frequency range >60GHz. By exploiting broadband electronics, and thanks to its high signal-to-noise ratio, this technique allows the acquisition, in a single-shot, of frequency-calibrated, mid-infrared molecular spectra spanning up to 100 GHz and beyond, which is particularly attractive for fast, active remote sensing applications in fields such as environmental or combustion monitoring.

Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink

The mid-wave infrared (MWIR), ranging from 2 to 5 micrometers, is of substantial interest for chemical sensing, imaging, and spectroscopy. Black phosphorus (bP)–based MWIR light emitters and detectors have been shown to outperform the state-of-the-art for commercial devices due to the low Auger recombination coefficient of bP. However, the scalability of these devices remains a challenge. Here, we report a bP ink formula that preserves the exceptional MWIR optoelectronic properties of bP to deposit centimeter-scale, uniform, and pinhole free films with a photoluminescence quantum yield higher than competing III-V and II-VI semiconductors with similar bandgaps at high excitation regime. As a proof of concept, we use bP ink as a “phosphor” on a red commercial light-emitting diode to demonstrate bright MWIR light emission. We also show that these films can be integrated into heterostructure device architectures with electron and hole selective contacts for direct-injected light emission and detection in MWIR.

Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots.

III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates - as opposed to suspended or wafer-bonded substrates - for greatly improved photon collection from InAs quantum dots. The structures utilize a unique two-tiered distributed Bragg reflector (DBR) structure for vertical electric field confinement over a broad angular range. Opposing "openings" in the cavities induce strongly polarized QD luminescence without harming collection efficiencies. We describe how measured enhancements depend on the choice of collection optics. This is important to consider when evaluating the performance of any photonic structure that concentrates farfield emission intensity. Our cavity designs are useful for integrating QDs with other quantum systems that require bulk substrates, such as surface acoustic wave phonons.

Identification of electronic dimensionality reduction in semiconductor quantum well structures

Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES). In semiconductor films (heterostructures), quantum well (QW) states arise due to electron/hole accumulations at the surface (interface). The quantized states due to quantum confinement can be observed by VUV-ARPES, while the periodic intensity modulations along the surface normal (kz) direction of these quantized states are also observable by varying incident photon energy, resembling three-dimensional (3D) band dispersion. We have conducted soft X-ray (SX) ARPES measurements on thick and ultrathin III-V semiconductor InSb(001) films to investigate the electronic dimensionality reduction in semiconductor QWs. In addition to the dissipation of the kz dispersion, the SX-ARPES observations demonstrate the changes of the symmetry and periodicity of the Brillouin zone in the ultrathin film as 2D QW compared with these of the 3D bulk one, indicating the electronic dimensionality reduction of the 3D bulk band dispersion caused by the quantum confinement. The results provide a critical diagnosis using SX-ARPES for the dimensionality reduction in semiconductor QW structures.

Push-Pull Heptamethines Near the Cyanine Limit Exhibiting Large Quadratic Electro-Optic Effect.

Harnessing the quadratic electro-optic (QEO) of near-infrared polymethine chromophores over broad telecom wavelength bands is a subject of immense potential but remains largely under-investigated. Hereina series of push-pull heptamethines containing the tricyanofuran (TCF) acceptors and indoline or benzo[e]indoline donors are reported. These dipolar chromophores can attain a highly delocalized "cyanine-like" electronic ground state in solvents spanning a wide range of polarities, in some cases even closer to the ideal polymethine state than symmetrical cyanines.A transmission-mode electromodulation spectroscopy is used to study the electric-field-induced changes in optical absorption and refraction of polymer films doped with heptamethine chromophores, and large and thermally stable QEO effect with high efficiency-loss figure-of-merits that compare favorably to those from dipolar polyenes in poled or unpoled polymers and III-V semiconductors is obtained.The study opens a path for developing organic materials based on cyanine-like merocyanines for complementary metal oxide semiconductor -compatible, fast, efficient, and low-loss electro-optic modulation.

Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces.

Raman spectroscopy is well-suited for the characterization of semiconductor materials. However, due the weakness of the Raman signal, the studies of thin semiconductor layers in complex environments, such as ultrahigh vacuum, are rather scarce. Here, we have designed a Raman apparatus based on the use of a fiber optic probe, with a lens collecting the backscattered light directly inserted in ultrahigh vacuum. The solution has been tested for the preparation of III-V semiconductor surfaces, which requires the recovery of their atomic reconstruction. The surfaces were either protected with a thin As amorphous layer or covered with a native oxide prior to their treatment. The analysis of the Raman spectra, which was correlated with the study of the surfaces with low temperature scanning tunneling microscopy at the end of the cleaning process, shows the high potential of Raman spectroscopy for monitoring the cleanliness of III-V semiconductor heterostructures in situ.

Designing an isoelectronic counterpart to group III-V semiconductors: A novel honeycomb BeCN2 monolayer with ultra-high mobility toward solar driven overall water splitting and bifunctional oxygen evolution/reduction reaction

Like group III-V materials, which have obviously broadened the scope of group IV family and enriched the semiconducting members, a lightest representative of group II−IV−V2 family, BeCN2 monolayer, as an isoelectronic counterpart to group III-V semiconductor has for long remained unsolved for its applications in HER/OER/ORR, although previous first-principles investigations have touched the configuration and existence toward multiple crystalline forms of BeCN2. Using density functional theory calculations, the stable BeCN2 monolayer is predicted to be a direct bandgap semiconductor with high ultraviolet light absorption, achieving photocatalytic overall water-splitting within full pH, whose photogenerated electrons/holes will provide an external potential to obviously reduce the overpotential of HER and even make it achieve a spontaneous OER within pH 0–14. Meanwhile, it presents significantly anisotropic and high carrier mobilities (104 order) with preferred electron/hole transport along the x/y-direction, providing rich and required charge sources for HER/OER/ORR. After TM-decoration, the catalytic activities are greatly enhanced, achieved by the low HER and OER/ORR overpotentials of 0.05/0.07 V for V/Co@BeCN2 and 0.79/0.43 V for Ni@BeCN2, respectively. Plus, under pH 0–14, the OER overpotential of Ni@BeCN2 can be completely overcome by the external potential provided by photogenerated holes, achieving bifunctional catalysis for OER and ORR. Particularly, the Ni-d orbital is evidently hybridized with the O-p orbital for OH*Ni@BeCN2, so that the initial lone electrons located at the anti-bonding orbital pair up can populate the downward bonding orbital, allowing the species *OH to be moderately adsorbed on Ni@BeCN2, and thus redound the performance of OER/ORR.

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III–V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the 〈110〉, 〈100〉 and 〈112〉 orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III–V substrates. The InAs nanowires and nanowire networks are zinc-blende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.

Highly reflective and passivated ohmic contacts in p-Ge by laser processing of aSiCx:H(i)/Al2O3/aSiC films for thermophotovoltaic applications

Crystalline germanium (c-Ge) has historically been regarded as a cost-effective alternative to III-V semiconductors for thermophotovoltaic (TPV) device fabrication. However, Ge-based devices have not yet reported high efficiencies, partially due to the lack of an efficient back-surface reflector that turns back to the heat source out-band (sub-bandgap) thermal radiation. The difficulty of implementing back surface reflectors in Ge TPV cells is related to the simultaneous requirement of good back surface passivation, low electrical resistivity, and high out-band optical reflectivity. In this study, we demonstrate a highly reflective ohmic contact to p-type c-Ge (doping concentration of 2 × 1015 cm−3) made of an aSiCx(1 nm)/Al2O3 (50 nm)/aSiC (45 nm) stack that is laser processed using Nd:YVO4 laser emitting at 355 nm to create punctual p+ contacts (locally diffused Al regions). This stack is finally caped with a thick (1000 nm) Al layer that behaves as a metallic mirror and back electrode. As the laser processed area increases from 0.1 to 3 %, which is the typical range in the final devices, the surface recombination velocity increase from 10.5 to 60.0 cm/s, while the effective contact resistance reduces from 0.462 to 0.036 Ω cm2. Moreover, a sub-bandgap reflectance of 90–98 % is achieved. Simulations assuming ideal device configuration indicate that implementing these back contacts could potentially enable TPV cell conversion efficiencies comparable to the reported high-efficiency c-Ge TPV cells operating at similar illumination temperature.

Ultrafast mode-locked laser in nanophotonic lithium niobate.

Mode-locked lasers (MLLs) generate ultrashort pulses with peak powers substantially exceeding their average powers. However, integrated MLLs that drive ultrafast nanophotonic circuits have remained elusive because of their typically low peak powers, lack of controllability, and challenges when integrating with nanophotonic platforms. In this work, we demonstrate an electrically pumped actively MLL in nanophotonic lithium niobate based on its hybrid integration with a III-V semiconductor optical amplifier. Our MLL generates [Formula: see text]4.8-ps optical pulses around 1065 nm at a repetition rate of ∼10 GHz, with energies exceeding 2.6 pJ and peak powers beyond 0.5 W. The repetition rate and the carrier-envelope offset frequency of the output can be controlled in a wide range by using the driving frequency and the pump current, providing a route for fully stabilized on-chip frequency combs.

Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation

Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation

Performance evaluation of a GaSb thermophotovoltaic converter

In recent years, Gallium Antimonide (GaSb), which has smallest bandgap among III-V semiconductors family, became the subject of extensive investigations in the field of thermophotovoltaic (TPV) converters, because of the recent improvements in optoelectronic technology. This paper describes an analytical process used to evaluate the performance of a GaSb TPV converter under different levels of illumination, taking account of the photons with energy below the cells bandgap by considering the cell’s reflectance to this fraction of incident radiation. The results show that a radiator temperature near 2200 K is most advantageous and a reflectance of 0.98 is necessary for below-bandgap irradiations to obtain conversion efficiency greater than 28%, at 300 K cell temperature. This efficiency will decrease as the cell temperature increase. The obtained results are found to be in good agreement with the available data.