Magnetic field modulation of polaron relaxation coherence effects in III-V semiconductor Gaussian quantum wells

Abstract

We have theoretically investigated the effects of the cyclotron frequency of magnetic field, the initial depth and the range of the asymmetrical Gaussian confinement potential on the vibrational frequency, ground state energy, excited state energy and coherence time of polaron in III-V semiconductors by using a linear combination operator and unitary transformations methods. Through numerical calculations, we find some interesting phenomena that the polaron decreases the energy level and releases the energy of a phonon to jump. From the point of view of the energy level of the polaron, which is αℏωLO energy lower than that of the electron, and the transition of the polaron to the ground state will have a change in lattice position, and the lattice relaxation phenomenon will appear. The theoretical study of the quantum coherence effect of polaron energy levels will provide guidance for the development of optoelectronic devices and the transmission of quantum information.