We proposed and fabricated amorphous indium- gallium-zinc-oxide thin-film transistors (TFTs) employing a novel organic-passivation layer (CYTOP) that results in low damage and good dielectric quality. The TFT with the CYTOP- passivation layer successfully exhibited a relatively good electrical characteristic (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> = 12.3 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s) compared with that (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> = 5.8 cm2/V · s) of the TFT with a SiOx-passivation layer. The CYTOP-passivated device exhibited relatively good stability (ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> : 2.8 V) under positive bias-temperature stress while the TFTs with the SiOx-passivation layer showed a 3.3-V ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> shift, respectively. The CYTOP passivation was performed at low annealing temperature (180 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ο</sup> C), and therefore, it is a good candidate for advanced flexible displays.