Abstract
In this paper, top-gate thin-film transistors (TFTs) using amorphous In–Ga–Zn–O as the n-channel active layer and SiO 2 as gate insulator were fabricated by radio frequency magnetron sputtering at room temperature. In this device, a SiO layer was used to be a buffer layer between active layer and gate insulator for preventing the damage of the InGaZnO surface by the process of sputtering SiO 2 with relatively high sputtering power. The thickness of buffer layers was studied and optimized for enhancing the TFTs performances. Contrasting to the TFTs without buffer layer, the optimized thickness of 10 nm SiO buffer layer improved the top-gate TFTs performances greatly: mobility increases 30%, reached 1.29 cm 2/V s, the I on/ I off ratio increases 3 orders, and the trap density at the interface of channel/insulator decreases about 1 order, indicated that the improvement of semiconductor/dielectric interface by buffering the sputtering power.
Published Version
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