Abstract
The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation-recombination (g-r) noise at drain currents <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure 1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.
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