Currently, semiconductor sensors typically require high operating temperatures (>200 °C) to detect H2, which increases energy consumption and safety hazards. This work uses PtSnx to modify rGO-SnO2 nanocomposites to reduce the operating temperature and improve moisture resistance. PtSnx-rGO-SnO2 nanocomposites are synthesized by a simple reflow reaction and have ppm-level H2 sensing performance at 175 °C with good moisture resistance. The PtSnx-rGO-SnO2 nanocomposite has a thickness of ~20 nm. Spherical PtSnx nanoparticles and capsule-shaped SnO2 nanoparticles were grown on the rGO surface. The spherical PtSnx nanoparticles are ~15 nm in diameter and the capsule-shaped SnO2 nanoparticles are ~5 nm in diameter and ~10 nm in length. The phase of PtSnx intermetallic compound varied as the Pt/Sn molar ratio increases. The 0.5 % PtSn2-rGO-SnO2 nanocomposites exhibited the highest response of 20.25 to 500 ppm H2 at the optimal operating temperature of 175 °C with a short response/recovery times of 1 s/17 s. The 0.5 % PtSn2-rGO-SnO2 nanocomposites also had excellent moisture resistance, reproducibility, and long-term stability. This work reveals that PtSnx-rGO-SnO2 nanocomposites are a promising sensing material for high-performance H2 detection.
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