Hydrogen Passivation Of Acceptors Research Articles

Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors

Enhanced acceptor activation is achieved in the ternary nitride semiconductor ZnSnN2. Hydrogen passivation of acceptors during growth, coupled with post-growth annealing to remove hydrogen, suppresses native donor formation and moves the Fermi energy away from the conduction band minimum. This technique produces nondegenerate zinc tin nitride with 1016 cm−3 electron concentration.

Resistance switching in indium phosphide using hydrogen passivation of acceptors

This letter demonstrates the use of dopant passivation by hydrogen in a highly doped semiconductor, for resistance switching applications. The acceptor passivation by hydrogen was utilized to form a rectifying contact on InP which otherwise showed nonrectifying behavior due to high dopant concentration. A reverse bias annealing of the diodes converted the rectifying contact into a nonrectifying one whereas an anneal without bias left it unchanged. The attainment of selective conversion is explained in terms of the reactivation processes involved.

A novel twin-ridge-waveguide optical amplifier switch

A novel twin ridge-waveguide optical amplifier switch is reported. The technique of hydrogen passivation of acceptors has been applied to decrease the current spreading in the region between the ridges. The incorporation of a passive waveguide below the active waveguide leads to the result that using 1.53 mu m TE polarized light, through and cross states, each with only 1 dB insertion loss, fiber-to-fiber, can be selected in a device of 360 mu m length by varying the currents to each ridge with a total current of 140 mA. A minimum crosstalk of less than -33 dB was achieved when the cross state was selected. This is the first report of a twin ridge-waveguide amplifier switch with such a low-loss, low-polarization sensitivity, and low crosstalk. >

Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study

PAC measurements at 111In, yielding information on the amount of formed In-H pairs, and four point resistivity measurements were combined to study the correlation between pair formation and electrical deactivation of acceptors in p-Si samples during passivation with H and thermal reactivation. Passivation was performed by means of low energy (200 eV) H + implantation which proved to be quite efficient at 400 K. A complete passivation of the In profile with a peak concentration of 10 18 cm −3 could be achieved. The results show, that the deactivation and reactivation of the In acceptors quantitatively coincide with the formation and dissociation of In-H pairs.

Hydrogen passivation of acceptors in p-InP

The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+-InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p-InP (Zn, 2×1016 cm−3) and n-InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation level, indicating that the passivation has similar thermal stability to that of acceptors in GaAs, but lower than that of donors.