Abstract
This letter demonstrates the use of dopant passivation by hydrogen in a highly doped semiconductor, for resistance switching applications. The acceptor passivation by hydrogen was utilized to form a rectifying contact on InP which otherwise showed nonrectifying behavior due to high dopant concentration. A reverse bias annealing of the diodes converted the rectifying contact into a nonrectifying one whereas an anneal without bias left it unchanged. The attainment of selective conversion is explained in terms of the reactivation processes involved.
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