A comprehensive analysis of the short channel effect (SCE) in the SOI gate controlled hybrid transistor (GCHT) is presented for the first time in comparison with the SOI MOSFET. Based on the numerical simulation, the controllability of the threshold voltage for different channel lengths and drain voltages is investigated, together with the subthreshold swing and the standby current. It is found that, with process compatibility with CMOS technology, the short channel behaviour is substantially improved in the GCHT due to its novel operating mechanism. The impact of the technological parameters on the short-channel characteristics is also discussed. It can be concluded that the SOI GCHT exhibits much lower sensitivity to technology variation than the MOSFET, resulting in a greatly expanded allowable design region and alleviation of contradiction between reduction of the short channel effect and suppression of the hot carrier effect. In addition, the turning-on/off performance of the SOI GCHT is reported in this paper. The simulated results show that the GCHT can be considered as a potential opportunity for deep-submicron and low voltage applications.